MMBD330 LUGUANG | Alldatasheet
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ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse Breakdown voltage MMBD330 MMBD770 V (BR)R I R=100μA 30 70 V Reverse current MMBD330 MMBD770 I R VR=25V VR=35V 200 200 nA Forward voltage MMBD330 MMBD770 VF IF=1.0mA IF=10mA IF=1.0mA IF=10mA 0.45 0.60 0.50 1.0 V Diode capacitance MMBD330 MMBD770 CD VR=15V,f=1MHz VR=20V,f=1MHz 0.9 0.5 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified MMBD330/MMBD770 Schottky Barrier Diodes http://www.luguang.cn mail:lge@luguang.cn
http://www.luguang.cn mail:lge@luguang.cn