MMBD7000_V01 VISHAY | Alldatasheet
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www.vishay.com Vishay Semiconductors Rev. 1.7, 13-Feb-18 1 Document Number: 85736 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode, Dual DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13” reel (8 mm tape), 10K/box 08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
- Silicon epitaxial planar diode
- Fast switching dual diode, especially suited for automatic insertion
- AEC-Q101 qualified available
- Base P/N-E3 - RoHS-compliant, commercial grade
- Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 Notes (1) Device on alumina substrate (2) On FR-5 board Available Models PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS MMBD7000 MMBD7000-E3-08 or MMBD7000-E3-18 Dual serial M5C Tape and reelMMBD7000-HE3-08 or MMBD7000-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 100 V Forward current (continuous) I F 200 mA Non-repetitive peak forward current t = 1 s I FSM 500 mA Power dissipation on FR-5 board Ptot 225 mW Derate above 25 °C P tot 1.8 mW/K Total device dissipation on alumina substrate Ptot 300 mW Derate above 25 °C P tot 2.4 mW/K THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient air R thJA (1) 417 K/W RthJA (2) 556 K/W Maximum junction temperature T j 150 °C Storage temperature range T stg -55 to +150 °C Operating temperature range T op -55 to +150 °C
www.vishay.com Vishay Semiconductors Rev. 1.7, 13-Feb-18 2 Document Number: 85736 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I R = 100 μA V (BR) 100 V Leakage current VR = 50 V I R 1000 nA VR = 100 V I R 3μ A VR = 50 V, Tj = 125 °C I R 100 μA Forward voltage IF = 1 mA V F 0.55 0.70 V IF = 10 mA V F 0.67 0.82 V IF = 100 mA V F 0.75 1.10 V Diode capacitance V R = 0, f = 1 MHz C D 1.5 pF Reverse recovery time IF = IR = 10 mA, iR = 1 mA, RL = 100 trr 4n s Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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