MMBD6050_V01 VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.8, 13-Feb-18 1 Document Number: 85735 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

  • Silicon epitaxial planar diode
  • Fast switching diode in case SOT-23, especially suited for automatic insertion
  • AEC-Q101 qualified available
  • Base P/N-E3 - RoHS-compliant, commercial grade
  • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 Notes (2) Alumina = 0.4" x 0.3" x 0.024" 99.5 % alumina Available Models PARTS TABLE PART ORDERING CODE CIRCUIT CONF IGURATION TYPE MARKING REMARKS MMBD6050 MMBD6050-E3-08 or MMBD6050-E3-18 Single 5AM Tape and reelMMBD6050-HE3-08 or MMBD6050-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V R 70 V Forward current IF 200 mA Peak forward surge current I FSM 500 mA Maximum power dissipation on FR-5 board (1) Ptot 225 mW Derate above 25 °C P tot 1.8 mW/°C Maximum power dissipation on alumina substrate (2) Ptot 300 mW Derate above 25 °C P tot 2.4 mW/°C THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance FR-5 R thJA 556 °C/W Junction to ambient alumina R thJA 417 °C/W Maximum junction temperature T j 150 °C Storage temperature range T stg -55 to +150 °C Operating temperature range T op -55 to +150 °C

www.vishay.com Vishay Semiconductors Rev. 1.8, 13-Feb-18 2 Document Number: 85735 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Dynamic Forward Resistance vs. Forward Current Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I R = 100 μA V (BR) 70 V Forward voltage IF = 1 mA V F 0.55 0.7 V IF = 100 mA V F 0.85 1.1 V Reverse leakage current V R = 50 V I R 100 nA Reverse recovery time I F = IR = 10 mA, iR = 1 mA t rr 4n s Diode capacitance V R = 0 C D 2.5 pF r - Dynamic Forward Resistancef (Ω) 100 1 100 10

18861 IF - Forward Current (mA)

18889 Tamb - Ambient Temperature (°C)

20 40 60 80 100 120 140 160 1800 P - Admissible Power Dissipation ( mW )tot 18662 100 1000 10000 r - Dynamic Forward Resistancef (Ω) 11 00.10.01 100 IF - Forward Current (mA) =2 5°CTj f=1k H z 18664 24680 1.1 1.0 0.9 0.8 0.7 CD (VR)/CD (0 V) - Relative Capacitance (pF) VR - Reverse Voltage (V) =2 5°CTj f=1M H z

www.vishay.com Vishay Semiconductors Rev. 1.8, 13-Feb-18 3 Document Number: 85735 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration 18665 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 I - Leakage Current ( nA )R Tj - Junction Temperature ( °C) =2 0VVR 10 10 1-1 100 0.1 ν /T T = 1/f=t pp IFRM tp T t I ν=0 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -218666 I - Admissible RepetitiveFRM Peak Forward Current ( A ) tp - Pulse Length ( s )

www.vishay.com Vishay Semiconductors Rev. 1.8, 13-Feb-18 4 Document Number: 85735 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)

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