MMBD318 SECOS | Alldatasheet
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Any changing of specification will not be informed individual MMBD318 Series MMBD318/MMBD318A/MMBD318C/MMBD318S Surface Mount High Votlage Switching Diode Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Max.Repetitive Peak Reverse Voltage V RRM 350 V Max.RMS Voltage VRMS 212 V Max. DC Blocking Voltage VDC 300 V Max. Average Forward Rectified Current Io 225 mA Typical Junction Capacitance between Terminal (Note 1) Cj 5.0 pF Max. Reverse Recovery Time (Note2) Trr 50 ns Non-Repetive Peak Forward surge Current @Tp=1.0us @Tp=1.0s IFSM 4 A Power Dissipation PD 350 mW Thermal Resistance Junction to Ambient Air R JA 357 /W Operation and Storage Temperature Range T ,TSTGj -60~+150 Case: SC59, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any MECHANICAL DATA High Reverse Breakdown Voltage Ultra high speed Switching High Conductance K J C H L A B S GV D Top View Dim Min Max A 2.700 3.100 B 1.400 1.600 C 1.000 1.400 D 0.350 0.500 G 1.800 2.000 H 0.000 0.100 J 0.085 0.177 K 0.400 0.600 L 0.850 1.150 S 2.400 2.800 V 0.450 0.550 All Dimension in mm SC-59 http://www.SeCoSGmbH.com Elektronische Bauelemente MMBD318 Marking: LD6 MMB D318A Marking: LD7 MMB D318C Marking: LD8 MMB D318S Marking: LD9 1 12 11 2 2 2 3 3 3 3 RoHS Compliant Product
FEATURES
θ Electrical Characteristics (AT TA = 25°C unless otherwise noted) Characteristics Symbol Min. Unit Reverse Breakdown Voltage. IR=150uA VR - V Average Reverse Current. VR=240V, TA=25 IR 100 100 uA Forward Voltage VF 1.0 V Note: 1. Measured at 1.0 MHz and applied reverse of 0 voltage 3. ESD sensitive product handling required. 2. Measured at applied forware current of 30mA, RL=100 and recovery to IRR=-3mA nA Max. 350 VR=240V, TA=150 Ω 01-Jun-2002 Rev. A Page 1 of 2 A suffix of "-C" specifies halogen & lead-free
Any changing of specification will not be informed individual MMBD318 Series MMBD318/MMBD318A/MMBD318C/MMBD318S Surface Mount High Votlage Switching Diode http://www.SeCoSGmbH.com Elektronische Bauelemente 0 400 800 1200 1600 2000 I , INSTANTANEOUS FORWARD CURRENT (mA)F V , INSTANTANEOUS FORWARD VOLTAGE (mV)F Fig. 2 Typical Forward Characteristics, per element 100 1.0 0.1 0.01 1000 T = 150°Cj T = 25°Cj 0 50 100 150 200 250 300 350 V , INSTANTANEOUS REVERSE VOLTAGE (V)R Fig.3 Typical Reverse Characteristics, per element 100 1.0 0.1 0.01 0.001 1000 T = 1 5 0°Cj T = 75°Cj T = 2 5°Cj 0.7 0.8 0.01 0.1 1.0 10 100 C , TOTAL CAPACITANCE (pF)T Fig. 4 Typical Total Capacitance vs. Reverse Voltage, per element V , REVERSE VOLTAGE (V)R 0.9 1.0 1.1 400 T , AMBIENT TEMPERATURE, (°C)A Fig. 1 Power Derating Curve, total package P , POWER DISSIPATION (mW)d 200 100 300 500 0 100 200 01-Jun-2002 Rev. A Page 2 of 2