MMBD217SEW SEMTECH_ELEC | Alldatasheet
Document overview
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Technical content
Dated : 10/10/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMBD217SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE
Applications
- Ultra high speed switching Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage V RM 80 V Reverse Voltage V R 80 V Average Rectified Forward Current (Single) I O 100 mA Maximum (Peak) Forward Current (Single) I FM 300 mA Peak Forward Surge Current (tp = 1 µs) I FSM 4 A Power Dissipation P d 200 mW Junction Temperature T J 150 OC Storage Temperature Range T s - 55 to + 150 OC Characteristics at T a = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 70 V IR 0.1 µA Capacitance between Terminals at VR = 6, f = 1 MHz CT 3.5 pF Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 50 Ω trr 4 ns Marking Code: A7 1 2
Dated : 10/10/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMBD217SEW