MMBD2004S

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Technical content

Features

■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package ■ Simple, superior circuit protection ■ Minimal PCB area ■ RoHS compliant*, UL Recognized P500-G and P850-G Series Dual TBU® High-Speed Protectors *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. Transient Blocking Units - TBU® Devices Bourns® Model P500-G and P850-G TBU® products are dual high-speed bidirectional protection components, constructed using MOSFET semiconductor technology, designed to protect against faults caused by short circuits, AC power cross, induction and lightning surges. The TBU ® high speed protector, triggering as a function of the MOSFET, blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. The TBU ® device is provided in a surface mount DFN package and meets industry standard requirements such as RoHS and Pb Free solder refl ow profi les. Electrical Characteristics (Tamb = 25 °C) The P-G series TBU® devices are bidirectional; specifi cations are valid in both directions. Symbol Parameter Min. Typ. Max. Unit Iop Maximum current through the device that will not cause current blocking P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH 100 200 100 200 mA I trigger Typical current for the device to go from normal operating state to protected state P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH 150 275 150 275 mA I out Maximum current through the device P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH 200 400 200 400 mA R device Series resistance of the TBU® device 50 55 Ω Rbal Line-to line series resistance difference between two TBU® devices 2 Ω tblock Maximum time for the device to go from normal operating state to protected state 1µ s I quiescent Current through the triggered TBU® device with 50 Vdc circuit voltage 0.7 mA Vreset Voltage below which the triggered TBU® device will transition to normal operating state 22 V Absolute Maximum Ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vimp Maximum protection voltage for impulse faults with rise time ≥ 1 µsec P500-Gxxx-WH P850-Gxxx-WH 500 850 V V rms Maximum protection voltage for continuous Vrms faults P500-Gxxx-WH P850-Gxxx-WH 300 425 V T op Operating temperature range -40 to +85 °C Tstg Storage temperature range -65 to +150 °C Agency Approval UL recognized component File # E315805. Industry Standards Description Model Telcordia GR-1089 Port Type 2, 4 P500-G Port Type 3, 5 P850-G *RoHS COMPLIANT Bourns® Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that customers evaluate our TBU-PL Series.

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. Typical Performance Characteristics P500-G and P850-G Series Dual TBU® High-Speed Protectors V-I Characteristics Time to Block vs. Fault Current Trigger Current Temperature -Itrigger Vreset -Vreset Itrigger 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.1 1 10 100 1000 Fault Current (A) Time to Block (sec) 100 120 140 -40 -20 0 20 40 60 80 Temperature (°C) % of Trigger Current

Applications

■ Sensor protection ■ Signal line protection

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. P500-G and P850-G Series Dual TBU ® High-Speed Protectors Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. Operational Characteristics P500-G Lightning, 500 V P850-G Lightning, 850 V The graphs below demonstrate the operational characteristics of the TBU® device. For each graph the fault voltage, protected side voltage, and current is presented. P500-G Power Fault, 120 Vrms, 25 A P850-G Power Fault, 230 Vrms, 25 A Pxxx-G Equipment V1 V2Tip Ring TEST CONFIGURATION DIAGRAM 1 µs/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 1 µs/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 4 ms/div. 100 V/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 4 ms/div. 100 V/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. 6&6 A 4&4 A 1&1 A 3&3 A 6 4 1 3 PIN 1 A B D C 4 64A 6A5 3 13A 1A2 EE J J N N H H M G G K F K LL TOP VIEW SIDE VIEW BOTTOM VIEW PIN 1 A B D C E JJ N N H M E K K F TOP VIEW SIDE VIEW BOTTOM VIEW P500-G and P850-G Series Dual TBU® High-Speed Protectors Product Dimensions DIMENSIONS: MM (INCHES) Dim. P500-G P850-G A 3.40 (.139) 4.00 (.157) 4.10 (.161) 3.40 (.139) 4.00 (.157) 4.10 (.161) B 5.90 (.232) 6.00 (.236) 6.10 (.240) 8.15 (.321) 8.25 (.325) 8.35 (.329) C 0.80 (.031) 0.85 (.033) 0.90 (.035) 0.80 (.031) 0.85 (.033) 0.90 (.035) D 0.000 (.000) 0.025 (.001) 0.050 (.002) 0.000 (.000) 0.025 (.001) 0.050 (.002) E 1.15 (.045) 1.25 (.049) 1.35 (.053) 1.15 (.045) 1.25 (.049) 1.35 (.053) F 1.05 (.041) 1.15 (.045) 1.25 (.049) 1.05 (.041) 1.15 (.045) 1.25 (.049) G- - - - - - 0.725 (.029) 0.825 (.032) 0.925 (.036) H 1.10 (.043) 1.20 (.047) 1.30 (.051) 1.10 (.043) 1.20 (.047) 1.30 (.051) J 0.375 (.015) 0.425 (.017) 0.475 (.019) 0.375 (.015) 0.425 (.017) 0.475 (.019) K 0.70 (.028) 0.75 (.030) 0.80 (.031) 0.25 (.010) 0.30 (.012) 0.35 (.014) L- - - - - - 0.70 (.028) 0.75 (.030) 0.80 (.031) M 0.70 (.028) 0.75 (.030) 0.80 (.031) 0.70 (.028) 0.75 (.030) 0.80 (.031) N 0.375 (.015) 0.425 (.017) 0.475 (.018) 0.375 (.015) 0.425 (.017) 0.475 (.018) Recommended Pad Layout Pad # Apply

1 Tip In

3 Tip Out

4 Ring Out

6 Ring In

NC = Solder to PCB; do not make electrical connection, do not connect to ground. Pad Designation TBU® devices have matte-tin termination fi nish. Suggested layout should use non-solder mask opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the pads of the device. P500-Gxxx P850-Gxxx Pads 1A and 1 are internally connected; the same for pads 3A with 3, 4A with 4, and 6A with 6. This allows for one PCB layout to accommodate the P500 or P850. P500-Gxxx P850-Gxxx 1.225 (.048) 0.75 (.030) 1.15 (.045) 1.275 (.050) 0.375 (.015) 1.225 (.048) 1.25 (.049) 0.85 (.033) 0.30 (.012) 0.75 (.030) 1.15 (.045) 0.375 (.015) Pad # Apply Pad # Apply 1A Tip In 4A Ring Out

1 Tip In 4 Ring Out

3 Tip Out 6 Ring In

NC = Solder to PCB; do not make electrical connection, do not connect to ground. Pad Designation Block Diagram P500-Gxxx P850-Gxxx Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications.

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. P500-G and P850-G Series Dual TBU® High-Speed Protectors Thermal Resistances Part # Symbol Parameter Value Unit P500-G R th(j-a) Junction to leads (package) 113 °C/W Junction to leads (per TBU® device) 236 °C/W P850-G R th(j-a) Junction to leads (package) 119 °C/W Junction to leads (per TBU® device) 215 °C/W Refl ow Profi le Profi le Feature Pb-Free Assembly Average Ramp-Up Rate (Tsmax to Tp) 3 °C/sec. max. Preheat - Temperature Min. (Tsmin) - Temperature Max. (Tsmax) - Time (tsmin to tsmax) 150 °C 200 °C 60-180 sec. Time maintained above: - Temperature (TL) - Time (tL) 217 °C 60-150 sec. Peak/Classifi cation Temperature (Tp) 260 °C Time within 5 °C of Actual Peak Temp. (tp) 20-40 sec. Ramp-Down Rate 6 °C/sec. max. Time 25 °C to Peak Temperature 8 min. max. Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications.

3312 - 2 mm SMD Trimming Potentiometer Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. P500-G and P850-G Series Dual TBU® High-Speed Protectors Typical Part MarkingHow to Order P 500 - G 120 - WH Form Factor P = Two TBU ® protectors in one device Impulse Voltage Rating 500 = 500 V 850 = 850 V Directional Indication for Paired Devices G = Bidirectional Iop Indicator 120 = 100 mA 200 = 200 mA Packaging Specifi cations (per EIA468-B) B A D C N F G (MEASURED AT HUB) USER DIRECTION OF FEED CENTER LINES OF CAVITY EMBOSSMENT t D TOP COVER TAPE E W P DIMENSIONS: MM (INCHES) Device A B C D G N P500-G, P850-G 326 (12.835) 330.25 (13.002) 1.5 (.059) 2.5 (.098) 12.8 (.504) 13.5 (.531) 20.2 (.795) - 16.5 (.650) 102 (4.016) Device A0 B 0 D D 1 E F P500-G 4.2 (.165) 4.4 (.173) 6.2 (.244) 6.4 (.252) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) 1.85 (.073) 5.4 (.213) 5.6 (.220) P850-G 4.2 (.165) 4.4 (.173) 8.45 (.333) 8.65 (.341) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) 1.85 (.073) 7.4 (.291) 7.6 (.299) Device K0 P P 0 P 2 t W P500-G 1.0 (.039) 1.2 (.047) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 11.7 (.461) 12.3 (.484) P850-G 1.1 (.043) 1.3 (.051) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 15.7 (.618) 16.3 (.642) MARKING NUMBER 50GA = P500-G120-WH 50GB = P500-G200-WH 85GA = P850-G120-WH 85GB = P850-G200-WH MANUFACTURER’S TRADEMARK* PIN 1 MANUFACTURING DATE CODE* - 1ST DIGIT INDICATES THE YEAR’S 6-MONTH PERIOD. - 2ND DIGIT INDICATES THE WEEK NUMBER IN THE 6-MONTH PERIOD. - 3RD & 4TH DIGITS INDICATE SPECIFIC LOT FOR THE WEEK. 6-MONTH PERIOD CODES: A = JAN-JUN 2009 C = JAN-JUN 2010 E = JAN-JUN 2011 B = JUL-DEC 2009 D = JUL-DEC 2010 F = JUL-DEC 2011 EXAMPLE: ARBC - 1ST DIGIT ‘A’ = JAN-JUN 2009 - 2ND DIGIT ‘R’ = WEEK 18; WEEK OF APRIL 27 - 3RD & 4TH DIGITS ‘BC’ = LOT SPECIFIC INFORMATION *TRANSITION FROM FULTEC TRADEMARK AND LOT CODE TO BOURNS TRADEMARK AND DATE CODE IN 2009. QUANTITY: 3000 PIECES PER REEL

3312 - 2 mm SMD Trimming Potentiometer Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. For new SLIC applications, we recommend that customers evaluate our new TBU-PL series. 500 ns/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 500 ns/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current Pxxx-G -VREF Equipment MOVs or GDTs V1 V2 P500-G and P850-G Series Dual TBU® High-Speed Protectors Reference Designs A cost-effective protection solution combines the Bourns® TBU® protection device with a pair of MOVs or Bourns® GDTs and a diode bridge. The diagram below illustrates a common confi guration of these components. The graphs to the right demonstrate the operational characteristics of the circuit. Common Confi guration Diagram P500-G Solution: 5000 V Lightning 2/10 µsec, 500 A REV. 10/13 P850-G Solution: 4000 V Lightning 10/700 µsec, 100 A P500-G Confi guration (GR-1089 Intra-building and 5 kV Lightning) Product Qty. Part Number Source TBU® Device 1 P500-Gxxx-WH Bourns, Inc. MOV 2 MOV-10D201K Bourns, Inc. Diode bridge 2 GSD2004S-V MMBD2004S Vishay Diodes Inc. Product Qty. Part Number Source TBU® Device 1 P850-G120-WH Bourns, Inc. MOV 2 MOV-10D361K Bourns, Inc. Diode bridge 2 GSD2004S-V MMBD2004S Vishay Diodes Inc. Asia-Pacifi c: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com “TBU” is a registered trademark of Bourns, Inc. in the United States and other countries.