MMBD2004 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Diodes ■ Features
- Fast Switching Speed
- Surface Mount Package Ideally Suited for Automatic Insertion
- High Reverse Breakdown Voltage
- Dual Series Configuration 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Reverse Voltage VRM 300 Working Peak Reverse Voltage VRWM 240 DC Blocking Voltage VR 240 RMS Reverse Voltage VRMS 170 Peak Forward Surge Current IFM 225 Peak Repetitive Forward Current IFRM 625 Non-Repetitive Peak Forward Surge Current @ t=1us 4 @ t=1s 1 Power Dissipation Pd 350 mW Thermal Resistance Junction to Ambient RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -65 to 150 mA V IFSM A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 300 IF= 20 mA 0.87 IF= 100 mA 1 VR= 240 V 100 nA VR= 240 V , TJ=150℃ 100 uA Total capacitance CT VR= 0 V, f= 1 MHz 5 pF Reverse recovery time trr IF=IR=30mA,Irr=3 mA,RL=100Ω 50 ns Reverse voltage leakage current Forward voltage VF V IR Switching Diodes MMBD2004/A/C/S (KMBD2004/A/C/S)
www.kexin.com.cn2 Diodes Switching Diodes MMBD2004/A/C/S (KMBD2004/A/C/S) ■ Marking Item Marking Eqivalent Circuit diagram MMBD2004 DB3 MMBD2004C DB4 MMBD2004A MMBD2004S DB5 DB6 ■ Typical Characterisitics 1.0 100 1000 0.1 0.01 0 1 2 I , INST ANT ANEOUS FOR WARD CURRENT (mA)F V , INST ANT ANEOUS FOR WARD VOL TAGE (V) Fig. 1 Forward Characteristics F T = 25 Cj ° 100 0.1 0.01 0 100 200 I , LEAKAGE CURRENT ( A)R T , JUNCTION TEMPERA TURE ( C ) Fig. 2 Leakage Current vs Junction Temperature j ° u