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Dated : 16/03/2015 Rev:01 ® SEMTECH ELECTRONICS LTD. MMBD172SE SILICON EPITAXIAL PLANAR DIODE for VHF~UHF band RF attenuator applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage V R 50 V Forward Current I F 50 mA Junction Temperature T j 125 OC Storage Temperature Range T stg - 55 to + 125 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit Forward Voltage at IF = 10 mA VF - - 1 V Reverse Voltage at IR = 10 μA VR 50 - - V Reverse Current at VR = 50 V IR - - 0.1 μA Total Capacitance at VR = 50 V, f = 1 MHz CT - 0.25 - pF Series Resistance 1) at IF = 10 mA, f = 100 MHz rs - 7 - Ω 1) CT is measured by 3 terminal method with capacitance bridge. 1 2 Marking Code: FP TO-236 Plastic Package