MMBD1501 FAIRCHILD | Alldatasheet
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MMBD1501/A / 1503/A / 1504/A / 1505/A MMBD1500 series, Rev. B3 Small Signal Diodes MMBD1501/A / 1503/A / 1504/A / 1505/A Absolute Maximum Ratings* TA = 25°C unless otherwise noted MARKING MMBD1501 11 MMBD1501A A11 MMBD1503 13 MMBD1503A A13 MMBD1504 14 MMBD1504A A14 MMBD1505 15 MMBD1505A A15 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 2001 Fairchild Semiconductor Corporation Thermal Characteristics Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 2.0 A A Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C 1 2 SOT-23 Connection Diagrams 1501 1503 1504 1505 2 1 Symbol Parameter Test Conditions Min Max Units VR Breakdown Voltage IR = 5.0 µA 200 V VF Forward Voltage I F = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 300 mA 620 720 800 830 0.87 0.90 720 830 890 930 1.1 1.15 mV mV mV mV V V IR Reverse Current V R = 125 V VR = 125 V, TA = 150°C VR = 180 V VR = 180 V, TA = 150°C 1.0 3.0 5.0 nA µA nA µA CT Total Capacitance VR = 0, f = 1.0 MHz 4.0 PF 2NC
Figure 8. Power Derating CurveFigure 7. Average Rectified Current (IF(AV))
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