MMBD1501 MCC | Alldatasheet

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Features

l Surface Mount Package Ideally Suited for Automatic Insertion l 150oC Junction Temperature l High Conductance Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram l Weight: 0.008 grams ( approx.) Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Symbol Value Unit Working Inverse Voltage VIV 180 V DC Forward Current IF 600 mA Average Rectified Current Io 200 mA Recurrent Peak Forward Current if 700 mA Peak Forward Surge Current @ @t=1.0ms if(surge) 1.0 2.0 A Power Dissipation Pd 350 mW Thermal Resistance R 357 o C/W Operation & Storage Temp. Range Tj, TSTG -55 to +150 o C Note: 1) These ratings are based on a max. junction temperature of 150 degrees C 2) These are steady state limits. T he factory should be consulted on applications involving pulsed or low duty cycle operation Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic Symbol Min Max Unit Test Cond. Breakdown Voltage BV 200 V IR=5.0uA Forward Voltage Drop VF 620 720 800 0.83 0.87 0.9 750 850 950 1.1 1.3 1.5 mV mV mV V V V I F=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA Reverse Current IR ----- 1.0 3.0 5.0 nA uA nA uA VR=125V VR=125V T A=150 o C VR=180V VR=180V T A=150 o C Junction Capacitance Cj ----- 4 pF VR=0V, f=1.0MHz MMBD1501(A) THRU MMBD1505(A) High Conductance Low Leakage Diode 350mW t=1.0s SOT-23 Suggested Solder Pad Layout DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .110 .120 2.80 3.04 B .083 .098 2.10 2.64 C .047 .055 1.20 1.40 D .035 .041 .89 1.03 E .070 .081 1.78 2.05 F .018 .024 .45 .60 G .0005 .0039 .013 .100 H .035 .044 .89 1.12 J .003 .007 .085 .180 K .015 .020 .37 .51 .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950 K A BC D EF G H J www.mccsemi.com /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents

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/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06/G06/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19 MCC

MMBD1501(A) thru MMBD1505(A) www.mccsemi.com MCC REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA 3 5 10 20 30 50 100 250 275 300 325 I - REVERSE CURRENT (uA) V - REVERSE VOLTAGE (V) R R Ta= 25°C REVERSE CURRENT vs REVERSE VOLTAGE IR - 130 - 205 Volts GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 130 150 170 190 V - REVERSE VOLTAGE (V) I - REVERSE CURRENT (nA) R R Ta= 25°C 205 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA 1 2 3 5 10 20 30 50 100 350 400 450 500 550 I - FORWARD CURRENT (uA) V - FORWARD VOLTAGE (mV) F F Ta= 25°C FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 0.1 0.2 0.3 0.5 1 2 3 5 10 500 550 600 650 700 750 800 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (mV) F F Ta= 25°C VF VF Average Rectified Current (Io) & Forward Current (I ) versus Ambient Temperature (T ) 05 0 1 0 0 1 5 0 100 200 300 400 500 T - AMBIENT TEMPERATURE ( C) I - CURRENT (mA) A A I - FO RW ARD CURR ENT STEADY STATE - mA o R F Io - AVERAGE RECTIFIED CURRENT - mA CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V 02468 1 0 1 2 1 4 1.5 2.5 3.5 REVERSE VOLTAGE (V) CAPACITANCE (pF) Ta= 25°C POWER DERATING CURVE 0 50 100 150 200 100 200 300 400 500 I - AVERAGE TEMPERATURE ( C) P - POWER DISSIPATION (mW) O D o DO-35 Pkg SOT-23 Pkg FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA 10 20 30 50 100 200 300 500 0.8 0.9 1.1 1.2 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (V) F F Ta= 25°C IF

MMBD1501(A) thru MMBD1505(A) www.mccsemi.com MCC CONNECTION DIAGRAMS 2 1 2 1 2 1 1 2 NC 1501 1504 1505 1503 MMBD1503 13 MMBD1503A A13 MARKING MMBD1504 14 MMBD1504A A14 MMBD1505 15 MMBD1505A A15 MMBD1501 11 MMBD1501A A11