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MMBD1501A~ MMBD1505A Plastic-Encapsulated Diode Elektronische Bauelemente 30-Nov-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High conductance Low Leakage Diode MARKING Part Name MMBD1501A MMBD1503A MMBD1504A MMBD1505A Marking A11 A 13 A 14 A 15 Circuit ABSOLUTE MAXIMUM RATINGS (@ Ta = 25°C) PARAMETER SYMBOL LIMITS UNIT Working Inverse Voltage V R 200 V DC Forward Current I F 600 mA Average Rectifying Current I O 200 mA Total Device Dissipation P D 350 mW Thermal Resistance, Junction to Ambient R θJA 357 °C/W Surge Current 1 s ISURGE 1 A 1 microsecond 2 A Junction, Storage Temperature T J , TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise specified) Parameters Symbol Min. Max. Unit Test Conditions Reverse Breakdown Voltage V (BR) 200 - V I R =5µA Reverse voltage leakage current I R - 10 nA V R =180V Forward Voltage VF1 - 0.75 V I F = 1 mA VF2 - 0.85 V I F = 10 mA VF3 - 0.95 V I F = 50 mA VF4 - 1.1 V I F = 100 mA VF5 - 1.3 V I F = 200 mA VF6 - 1.5 V I F = 300 mA Diode Capacitance C D - 4 pF V R = 0, f = 1 MHz SOT-23 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50
MMBD1501A~ MMBD1505A Plastic-Encapsulated Diode Elektronische Bauelemente 30-Nov-2010 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES