MMBD1501A DSK | Alldatasheet

Document overview

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Technical content

High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A

FEATURES

z Two element incorporated into one package. (Emitter-coupled transistors) MMBD1501A MMBD1503A z Reduction of the mounting area and assembly cost by one half. A P P L I C A T I O N S MMBD1504A MMBD1505A z For general application. SOT-23

ORDERING INFORMATION

Type No. Marking Package Code MMBD1501A A11 SOT-23 MMBD1503A A13 SOT-23 MMBD1504A A14 SOT-23 MMBD1505A A15 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Reverse Voltage V R 200 V Average rectified current V F(AV) 200 mA Forward Continuous Current I FM 600 mA Peak forward current (1.0s) ( 1 . 0 m ) I FSM 1.0 2.0 A Power Dissipation P d 350 mW Thermal resistance,Junction to ambient R θJA 357 ℃/W Storage temperature T STG -55-150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr

High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Min. Max. Unit Test Conditions Reverse Breakdown Voltage V (BR)R1

200 V I

R =5μA Forward voltage V F 0.62 0.72 0.8 0.83 0.87 0.9 0.72 0.83 0.89 0.93 1.1 1.15 V I F =1mA I F =10mA I F =50mA I F =100mA I F =200mA I F =300mA Reverse current I R 1.0 nA V R =125V V R =180V Diode Capacitance C D 4 pF V R =0V,f=1MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea

High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A www.diode.kr Diode Semiconductor Korea

High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOLDERING FOOTPRINT Unit : mm

PACKAGE INFORMATION

MMBD1501A/1503A/1504A/1505A SOT-23 3000/Tape&Reel SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1Typical K 2.35 2.45 All Dimensions in mm www.diode.kr Diode Semiconductor Korea