MMBD1403

MMBD1401 FAIRCHILD | Alldatasheet

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MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 CONNECTION DIAGRAMS 1 2 NC Symbol Parameter Value Units W IV Working Inverse Voltage 175 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond 1.0 2.0 A A Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MMBD1401/1403/1404/1405* PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 357 °C/W 1401 1403 1404 1405 SOT-23 MMBD1401 / 1403 / 1404 / 1405 Discrete POWER & Signal Technologies ã1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test C onditions Min Max Units BV Breakdown Voltage IR = 100 µA 200 V IR Reverse Current V R = 120 V VR = 175 V 100 nA nA VF Forward Voltage I F = 10 mA IF = 50 mA IF = 200 mA IF = 300 mA 760 800 920 1.0 1.1 mV mV V V C O Diode Capacitance V R = 0, f = 1.0 MHz 2.0 pF TRR Reverse Recovery Time I F = IR = 30 mA, IRR = 1.0 mA, RL = 100Ω 50 nS Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 3 5 10 20 30 50 100 275 300 325 I - REVERSE CURRENT (uA) V - REVERSE VOLTAGE (V) R R Ta= 25°C REVERSE CURRENT vs REVERSE VOLTAGE IR - 55 to 205 V GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 55 75 95 115 135 155 175 195 V - REVERSE VOLTAGE (V) I - REVERSE CURRENT (nA) R R Ta= 25°C REVERSE CURRENT vs REVERSE VOLTAGE IR - 180 to 255 V GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 180 200 220 240 100 V - REVERSE VOLTAGE (V) I - REVERSE CURRENT (nA) R R Ta= 25°C 255 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 1 2 3 5 10 20 30 50 100 250 300 350 400 450 I - FORWARD CURRENT (uA) V - FORWARD VOLTAGE (mV) F F Ta= 25°C VR VF IR MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpoise Diode (continued)

Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 0.1 0.2 0.3 0.5 1 2 3 5 10 450 500 550 600 650 700 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (mV) F F 725 Ta= 25°C FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA 10 20 30 50 100 200 300 500 0.7 0.8 0.9 1.1 1.2 1.3 1.4 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (mV) F F 800 Ta= 25°C Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to + 80 Deg C) 200 400 600 800 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (mV) F F Ta= 25°C Ta= +80°C Ta= -40°C CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V 0 2 4 6 8 10 12 14 0.8 0.9 1.1 1.2 1.3 REVERSE VOLTAGE (V) CAPACITANCE (pF) Ta= 25°C Average Rectified Current (Io) & Forward Current (I ) versus Ambient Temperature (T ) 05 0 1 0 0 1 5 0 100 200 300 400 500 T - AMBIENT TEMPERATURE ( C) I - CURRENT (mA) I - FORWARD CURRENT STEADY STATE - mA o R F Io - AVERAGE RECTIFIED CURRENT - mA A A REVERSE RECOVERY TIME vs REVERSE RECOVERY CURRENT (Irr) 11 . 522 . 53 Irr - REVERSE RECOVERY CURRENT (mA) REVERSE RECOVERY (nS) IF = IR = 30 mA Rloop = 100 Ohms VF VF VF MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpoise Diode (continued)

Typical Characteristics (continued) POWER DERATING CURVE 0 50 100 150 200 100 200 300 400 500 I - AVERAGE TEMPERATURE ( C) P - POWER DISSIPATION (mW) O D o DO-35 Pkg SOT-23 Pkg MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpose Diode (continued)

ACEx™ CoolFET™ CROSSVO LT™ E 2CMOS TM FACT™ FACT Quiet Series™ FAST ® FAS Tr™ G TO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPO RT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPRO VAL OF FAIRCHILD SEMICONDUC TOR CORPOR ATION. As used herein: ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT S TATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT Y, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.