MMBD120X GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
1201 Marking Code:
a = 25 O Characteristics at T a = 25 O C 1202 1 2
1202 Marking Code:
1203 Marking Code:
1204 Marking Code:
1205 Marking Code:
Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. Symbol Parameter Value Unit V RRM Maximum Repetitive Reverse Voltage 100 V I F(AV) Average Rectified Forward Current 200 mA I FSM Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 T STG Storage Temperature Range -55 to +150 °C T J Operating Junction Temperature 150 °C P D Power Dissipation 350 mW Derate Above 25°C2 .8 °CmW/ R θJA Thermal Resistance, Junction-to-Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Unit V R Breakdown Voltage I R = 100 μA1 00 V V F Forward Voltage I F = 1.0 mA 550 600 mV I F = 10 mA 660 740 mV I F = 100 mA 820 920 mV I F = 200 mA 0.87 1.0 V I F = 300 mA 1.1 V I R Reverse Current V R = 20 V 25 nA V R = 50 V 50 nA V R = 50 V, T A = 150°C 100 μA C T Total Capacitance V R = 0, f = 1.0 MHz 2.0 pF t rr Reverse Recovery Time I F = I R = 10 mA, I RR = 1.0 mA, R L = 100 Ω 4.0 nS D120x-SERIES MMB
Plastic surface mounted package; 3 leads SOT-23 D120x-SERIES MMB