MMBD1204

MMBD1201 ONSEMI | Alldatasheet

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MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 — Small Signal Diodes © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7 July 2015 MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

Ordering Information

Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Part Number Top Mark Package Packing Method MMBD1201 24 SOT-23 3L Tape and Reel MMBD1202 25 SOT-23 3L Tape and Reel MMBD1203 26 SOT-23 3L Tape and Reel MMBD1204 27 SOT-23 3L Tape and Reel MMBD1205 28 SOT-23 3L Tape and Reel Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C SOT-23 1201 1202 1203 1204 2NC 1205 1NC Connection Diagram

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 — Small Signal Diodes © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation 350 mW Derate Above 25°C2 . 8 m W / °C RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Unit VR Breakdown Voltage I R = 100 μA1 0 0 V VF Forward Voltage IF = 1.0 mA 550 600 mV IF = 10 mA 660 740 mV IF = 100 mA 820 920 mV IF = 200 mA 0.87 1.0 V IF = 300 mA 1.1 V IR Reverse Current VR = 20 V 25 nA VR = 50 V 50 nA VR = 50 V, TA = 150°C 100 μA CT Total Capacitance V R = 0, f = 1.0 MHz 2.0 pF trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω 4.0 nS

Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH AND TIE BAR EXTRUSIONS.

1.20 MAX

0.20 A B

0.20 MIN

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