MMBD1201 KEXIN | Alldatasheet
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Features
Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit W orking Inverse Voltage W IV 50 V Average Rectified Current I O 200 mA DC Forward Current I F 600 mA Recurrent Peak Forward Current i f 700 mA Peak Forward Surge Current Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 2.0 A Storage Temperature Range T stg -55 to + 150 Operating Junction Temperature T J 150 Total Device Dissipation 350 mW Derate above 25 2.8 mW/ Thermal Resistance, Junction to Ambient R JA 357 /W if(surge) P D High Conductance Ultra Fast Diode MMBD1201;MMBD1203 MMBD1204;MMBD1205
2 www.kexin.com.cn Marking Type MMBD1201 MMBD1203 MMBD1204 MMBD1205 M a r k i n g 2 42 62 72 8 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Max Unit Breakdown voltage B V IR = 100 A 100 V IF = 20 V 25 nA IF = 50 V 50 nA IF =5 0V ,TA = 150 5 A IF = 1.0 mA 550 600 mV IF = 10 mA 660 740 mV IF = 100 mA 820 920 mV IF = 200 mA 0.87 1.0 V IF = 300 mA 1.1 V Diode capacitance C D VR = 0, f = 1.0 MHz 2.0 pF Reverse recovery time T RR IF =I R =1 0m A , IRR =1 . 0m A ,RL = 100 4.0 ns IRReverse current VFForward voltage MMBD1201;MMBD1203 MMBD1204;MMBD1205