MMBD1201 FAIRCHILD | Alldatasheet

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MMBD1201 / 1203 / 1204 / 1205 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W IV Working Inverse Voltage 50 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond 1.0 2.0 A A Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MMBD1201/1203/1204/1205* PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 357 °C/W CONNECTION DIAGRAMS 1 2 NC 1201 1204 1205 1203 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 SOT-23 MMBD1201 / 1203 / 1204 / 1205 Discrete POWER & Signal Technologies ã1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25°C unless otherwise noted Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 1 2 3 5 10 20 30 50 100 110 120 130 140 150 I - REVERSE CURRENT (uA) V - REVERSE VOLTAGE (V) R R Ta= 25°C R R Ta= 25°C REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 10 20 30 50 70 100 100 150 200 250 300 V - REVERSE VOLTAGE (V) I - REVERSE CURRENT (nA) 225 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 1 2 3 5 10 20 30 50 100 250 300 350 400 450 I - FORWARD CURRENT (uA) V - FORWARD VOLTAGE (mV) F F 485 Ta= 25°C FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 0.1 0.2 0.3 0.5 1 2 3 5 10 450 500 550 600 650 700 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (mV) F F

725 Ta= 25°C

Symbol Parameter Test C onditions Min Max Units BV Breakdown Voltage IR = 100 µA 100 V IR Reverse Current V R = 20 V VR = 50 V VR = 50 V, TA = 150°C 5.0 nA nA µA VF Forward Voltage I F = 1.0 mA IF = 10 mA IF = 100 mA IF = 200 mA IF = 300 mA 550 660 820 0.87 600 740 920 1.0 1.1 mV mV mV V V C T Diode Capacitance V R = 0, f = 1.0 MHz 2.0 pF TRR Reverse Recovery Time I RR = 1.0 mA, IF = IR = 10 mA, R L = 100Ω 4.0 nS VRVF VF High Conductance Ultra Fast Diode (continued) MMBD1201 / 1203 / 1204 / 1205

Typical Characteristics (continued) Average Rectified Current (Io) & Forward Current (I ) versus Ambient Temperature (T ) 0 50 100 150 100 200 300 400 500 T - AMBIENT TEMPERATURE ( C) P - POWER DISSIPATION (mW) I - FORWARD CURRENT STEADY STA TE - mA o D R A F Io - AVERAGE RECTIFIED CURRENT - mA A FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA 10 20 30 50 100 200 300 500 0.6 0.8 1.2 1.4 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (V) F F 1.5 Ta= 25°C CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V 02468 1 0 1 2 1 4 1.1 1.2 1.3 REVERSE VOLTAGE (V) CAPACITANCE (pF) Ta= 25°C REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms 10 20 30 40 50 60 1.5 2.5 3.5 REVERSE CURRENT (mA) REVERSE RECOVERY (nS) Ta= 25°C POWER DERATING CURVE 0 50 100 150 200 100 200 300 400 500 I - AVERAGE TEMPERATURE ( C) P - POWER DISSIPATION (mW) O D o DO-35 Pkg SOT-23 Pkg VF PD High Conductance Ultra Fast Diode (continued) MMBD1201 / 1203 / 1204 / 1205

ACEx™ CoolFET™ CROSSVOLT™ E 2CMOS TM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quite Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The data sheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.