MMBD101 KEXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Features
Low Noise Figure-6.0dB Typ@1.0GHz Very Low Capacitance-Less Than 1.0pF@zero Volts High Forward Conductance-0.5volts(typ)@IF=10mA Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Reverse voltage V R 7.0 V Forward Power Dissipation @T A =2 5 280 mW Derate above 25 2.2 mW/ Junction temperature T j 150 Storage temperature range T stg - 5 5t o+ 1 5 0 pF Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit Reverse Breakdown Voltage V (BR)R IR=1 0 A 7.0 10 V Diode Capacitance C T VR= 0,f =1.0MHz,Note1 0.88 1.0 pF Forward Voltage V F IF=1 0m A 0 . 5 0 . 6 V Reverse Leakage I R VR= 3.0 V 0.02 0.25 A Marking Marking 4M