MMBC1623L3

MMBC1623L3 MOTOROLA | Alldatasheet

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MOTOROLA SC {XSTRS/R FF qe pe Bfeaez254 coszaso 2 [ 6367254 MOTOROLA Sc CXSTRS/R FD) sep 81990. D : | MAXIMUM RATINGS: G 1S 1 [ating —*YSymbot [vate [un] T'27- ; [cotectcrdase Votage |] veg | so | vee] | MMBC1623L3,4,5,6,7 : [emieroose votege | veg | so | _vae | [cates curon—conimovs [ic [wo | maé|| cage 918-020, STYLES | . i THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) [chorea | Symbot [ox [unt] Tou vce Dippin FE Board= oid nal Once acta [Thrmat Resistance Jnston to Ambiont | fain | see | “om | : Total Device Dissipation mW " one Alumina Substrate, Ta = 25°C Femiter Snes wre [Taerms Resse snaion Ambient | Raia [| 417 | “omw_| [uneion and storage Temperswre | TuTag | 160 |e _| “ERS = 1.0 x 0.75 x 062in. AMPLIFIER TRANSISTOR ‘Alumina = 0.4 x 0.3 x 0,024 in, 99.5% alumina. NPN SILICON: DEVICE MARKING MMBC1623L6 = L6; MMBC1623L7 = L7 Refer to MPS3904 for graphs. . ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) OFF CHARACTERISTICS cobaser Cun Curent (Weg = 40 Veo, le = 0) Emitter Cutoff Current (Veg = 6.0 Vdc, Io = 0) ON CHARACTERISTICS 0c Gren ln {ic = 1.0 mAde, VcEe = 6.0 Vdc} (MMBC1623L3 60 120 Collector-Emitter Saturation Voltage Vce(sat) (ig = 100 mAde, Ig = 10 mAdc) Base-Emitter Saturation Voltage Vee (sat) ' {ig = 100 mA, Ig = 10 mAdc) Base-Emitter On Voltage VBe(on) Vde {ig = 1,0 mAde, VoE = 6.0 Vde) ‘SMALL-SIGNAL CHARACTERISTICS (ce = 6.0 Vde, lg = 10 mAde, f = 100 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-55

MOTOROLA SC {XSTRS/R F} 36 de Bese72sy ooazaaa y [ 6367254 MOTOROLA SC (XSTRS/R F) .__ ___ 96D 81991 - D | | MAXIMUM RATINGS T 19-15 j ; [ating TT Stat [Vata [unit] 27 [ColecortmiterVotage T Veeo | 120 (| vae ‘| [Coteciorsase Vetge | ves [150 [vee | | EmiterGase Vonage | vepo [50 | vae | MMBC1653N2,3,4 | [Cotecior Curent Coninvous [te | 50 mnae_| ! CASE 318-02/03, STYLE 6 , THERMAL CHARACTERISTICS Gg SOT-: }-236AA/AB) [__charctiie ___[svmpot [ex [va] 23 (TO ) py | Total Deven Dissipation FRE Board mW Tanase — [Thermal Resisonce Junction to Ambient | Raia | ese | “cmw_| : Total Device Dissipation 300 mW 1 Gare Alumina Substrate,** Ta = 25°C 2 Derate above 25°C 24 mwrc 2Emator | Thermal Resistance Junction to Ambient | Ra [417 | -cmw_| [unction and Storage Temperature | Ty.Tag | 160 [°C | | HIGH VOLTAGE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. DEVICE MARKING : i ELECTRICAL CHARACTERISTICS (Ta ~ 25°C unless otherwise noted.) . Cheractriatie ——[simbet [in [tye [ex Toe] : OFF CHARACTERISTICS Collector Cuof Current ce De Emir Catof Current 120 Mipcueeno Te ae ON CHARACTERISTICS ‘DC Current Gain RE (VCE = 3.0 Vde, Ig = 18 mAdc) MMBC1653N2 50 MMBCIOSaNG ‘00 MMBCIESaNe 18 Calestor-Emiter Saturation Vohage . (ig = 10 mAde, Ip = 1.0 mAdc) exe Emiter Saturation Voge Vie lig = 10 mAdc, Ip = 1.0 mAdc) SMALLSIGNAL CHARACTERISTICS ' CurrentGain — Bandwidth Product 7 (VCE = 10 Vdc, Ip = 10 mAdc, f = 100 MHz) ‘utput Capactance Cobo (cp = 10 Vde, Ie = 0, f = 1.0 MHz) sssssssSsSSSSSSsSSSSSsSSSsSSSsSSssssss i MOTOROLA SMALL-SIGNAL SEMICONDUCTORS i 356”

MOTOROLA SC {XSTRS/R FE Sb pe Jeae7254 ooa1die & | [ 6367254 MOTOROLA SC CXSTRS/R F) . 96D 81992 D MAXIMUM RATINGS ' T “2 G AS {GaiecoraaseVatage” | Veno_[1@0 | vee| | MMBC1654N5,6,7 [Emitor Beso Vorage | _veso | 0 | vee _| [eatecorCurent—-coniniows | ic [so | mae || case s18.02/03, STYLES SOT-23 (TO-236AA/AB) ‘THERMAL CHARACTERISTICS [Thermal Resistance Junction wo Ambient | fgua | ssa__| “em_| : Total Device Dissipation 300 mW a _ Alumina Substrate,** Ta = 25°C 2 Emitter Derate above 25°C 24 mwrc [union and Storage Temperawre | Ty. Tag | 160" | TERS @ 105 078x062. HIGH VOLTAGE TRANSISTOR DEVICE MARKING ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Chace Stet [min | te [ex | Uo OFF CHARACTERISTICS a Collector Cutoff Current [ ‘= | Ade (Wop = 100 V, Ie = 0) Emitter Cutoff Current [= | wade (Weg = 6.0 Vdc, Ic = 0) GN gHARAGTERIETCS (cE = 3.0V, Ic = 18 mAdc) MMBC1654N5 50 Prereateeted & pitattote ie Collector-Emitter Saturation Voltage | vezen | ve (Ig = 10 mAde, Ip = 1.0 mAde) Peer, | lig = 10 mAde, Ip = 1.0 mAde) ‘SMALL-SIGNAL CHARACTERISTICS |

1 Current-Gain — Bandwidth Product | = |

. (Voce = 10 Vdc, Ip = 10 mAdc, f = 100 MHz) a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-57

MOTOROLA SC {XSTRS/R FE 9b DE 6367254 0082004 7 I

6367254 MOTOROLA SC (XSTRS/R F) 96D 82004 D |

MAXIMUM RATINGS” T= 3/-2" [Grain ourcevonage | Vos | 20 | vdo_| MMBF4416 [DrsinGatevotage «| Voc | 30 | vie | teeter ————— CASE 318-0203, STYLE 10 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Total Device Dissipation FR-5 Board,* mw vource Derate above 25°C mWrc. 3 <] ‘Thermal Resistance Junction to Ambient | Raja | 886 | “C/mW_ | 1 Gate Total Device Dissipation mw 2 1 ove Alumina Substrate,** Ta = 25°C a“ Dera sbove 26°C wre [unetion ond Storage Temperature | Ty.Tetg | 160 |__| JFET *FR5 = 1.0 x 0.76 x 0.62 in. VHF/UHF AMPLIFIER TRANSISTOR ming = Os x03 x 0.024 In, 98.6% alumina onannet DEVICE MARKING ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) , [characteris drt [ain | Max [One i OFF CHARACTERISTICS | Gate-Source Breakdown Voltage ViBRIGSS: vde (ig = 1.0 wAdc, Vos = 0) (gs = 20 Vde, Vos = 0, TA = 150°C) : Gate Source Cutoff Voltage Vde . lip = 1.0 nAde, Vpg = 15 Vde) A Gate Source Voltage Vae i lip = 0.5 mAde, Vpg = 15 Vdo) | ON cHARACTERISTICS (Was = 15 Vdc, Veg = 0) Gate-Source Forward Voltage Vde lig = 1.0 mAde, Vpg = 0) , ‘SMALL-SIGNAL CHARACTERISTICS i Forward Transfer Admittance isl 7500 , (ps = 15 Vde, Vag = 0, f = 1.0 kHz) Ouiput Aditance mee {Vps = 16 Vdc, Vas = 0, f = 1.0 kHz) Toput Copectance (Vpg = 15 Vdc, Vag = 0, f = 1.0 MHz) Reverse Transfer Capacitance Cres (Vps = 15 Vdc, Vas ~ 0, f = 1.0 MHz) Output Cepectnce Wos = 15 Vde, Vgs = 0, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS (Vps = 15 Vdc, Ip = 5.0 mAde, Rg ~ 1000 2, f = 100 MHz) (ps = 15 Vde, Ip = 6.0 mAde, Rg = 1000 9, f = 400 MHz) Common Source Power Gain (Vps = 15 Vde, Ip = 5.0 mAde, f = 100 MHz) (ps = 15 Vdc, Ip = 5.0 mAde, f = 400 MHz) ~ MOTOROLA SMALL-SIGNAL SEMICONDUCTORS | 3-69 ~ _ _ Oe i

‘MOTOROLA SC {XSTRS/R FF ‘ib [ 6367254 MOTOROLA SC (XSTRS/R F) 96D 82005 OD rc | MAXIMUM RATINGS T- 38-2 [rating Taymor [vata [uni] : | [DreinSoure Votege | _vos_| 30 | vas | [Discs vateg | “pq at vee] MMBF4860 [Reverso GateSoucevorage | Vasig | 20 | vee | [Forword Gate Cuno dig) |e” | mace] | CASE 318.02/03, STYLE 10 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS [characterise | Symbot [Mex [unt ! Talal Device Dissipation FR Board mW 2 ours ‘ op Ta = 25°C . : 3? ieee ninre , ‘Total Device Dissipation mw 2 1 Alumina Substrate,** Ta = 25°C 1 Drain Dorie shove 256 wre . Thermal Resistance Junction to Ambient | Rqa__| 417 | -cimw _| [uncon and Storage Temperature | Ty. Tag | 180 | _"c _| FET ! *FR-6 = 1,0 x 0.75 x 0.62 in. SWITCHING TRANSISTOR ii Aluming = 0409 ¥ 0036 in, 995% alumina. N-CHANNEL DEVICE MARKING . ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [hractritts TT symbor [in| ox Unie] OFF CHARACTERSTICN Gate-Source Breakdown Voltage ViBRIGSS: Vde lig = 1.0 wAde, Vpg = 0) Gate Reverse Current (V@s = 15 Vde, Vos = 0) nade (Vag = 15 Vde, Vps = 0, Ta = 150°C) BAdC Geta Source Cutt Votage Voseom Vae (Vog = 15s Ip = 08 nace) ON CHARACTERISTICS Zero-Gate-Voltage Drain(1) mAdc WVps = 15 Vde, Vgs = 0) Train Cutt Cree (ps = 15 Vdo, Vgg = 10 Vde) 0.25 Ade 1 (pg = 16 Vde, Vgg = 10 Vde, Ta = 160°C) 05 wAdc t Drain-Source On-Voltage Vosion) Vde | 1 {ip = 10 mAdo, Vgg = 0) ‘Static Drain-Source On Resistance i (Wes = 0, Ip = 0, f = 1.0 kHz) Input Capacitance Mos © OV = 10 ¥de, f= 1.0 He Toverse TreforCopectonce i pg = 0, Vag = 10 Vdo, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Tine (pp = 10 Vdc, Ipfon) = 20 mAdc) {VG{on) = 9 Vesioft) = 10 Vdc) Tice Time (Vpp = 10 Vdc, Ip(on) = 10 made) aaa = On ety 80 Vel gure 1 Turn-Off Time . (pp = 10 Vde, tp(on) = 6.0 mAdc) WGSton) = 0, Vesiotf) = 4.9 Vdc) (Figure 1) } (1) Pulse Test: Pulse Width = 100 ms, Duty Cycle = 10%. ee MOTOROLA SMALL-SIGNAL SEMICONDUCTORS. | 3-70

MOTOROLA SC {XSTRS/R F} qb pe Beanzesy OO8200b o r [ 6367254 MOTOROLA SC (XSTRS/R F) ss 96D 82006 OD | “MMBF4860 7-35-25 : FIGURE 1 — SWITCHING TIMES TEST CIRCUIT i tr<1.0ns te< 1.0 ns va 93 O-=-; VGs{on) | 200 ns input. | -6.0V 1 ---— Vesiott) i ouTPuT | ton Le-o| totf INPUT = té(on) —t ae the taott) 60 toa hela ey ~ ~ - u 1 OUTPUT 90%. 90% TEST CIRCUIT VOLTAGE WAVEFORMS . NOTES: 1. The input waveforms are supplied by a generator withthe following characteristics: : Zout = 50 ohms, Duty Cycle = 2.0% 2. wavelorms ore mnitored on an oslloscope with ho following characteris: iy 078 ns, iq » 1.0 megahm, Cin = 25 PF \\ a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 371