MM8000 MOTOROLA | Alldatasheet
Document overview
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Technical content
MM8000MM8001MM8002CASE79-02,STYLE1TO-39(TO-205AD)HIGHFREQUENCYTRANSISTORNPNSILICON MAXIMUMRATINGSRatingSymbolValueUnitCollector-EmitterVoltageVCEO30VdcCollector-BaseVoltageVCBO40VdcEmitter-BaseVoltageVEBO3.5VdcCollectorCurrent"c0.4AdcTotalDeviceDissipation@Jq=25°CDerateabove25°CPD3.520WattsmW/°COperatingandStorageJunctionTemperatureRangeTj.Tstg-65to+200°C (lC=100mAdc,Vce=15Vdc,f=200MHz)MM8000MM8001MM8002 fT550700100070090012007009001000 --MHz OutputCapacitance(VCB=30Vdc,lE=0,f=1.0MHz)Cobo——3.5pFNoiseFigure(Figure1)(lC=10mAdc,Vce=15Vdc,f=200MHz)NF—2.7—dBFUNCTIONALTESTCommon-EmitterAmplifierPowerGain(Figure1)dC=10mAdc,VCe=15Vdc,f=200MHz)Gpe—11.4—dB 7-128
MM8000•MM8001•MM8002FIGURE1-200MHzTESTCIRCUIT Pi„(Rg-50n)2/p>\\~ Cl ?<L2-SC6 <i »•» yro*•Pom(zl= /vC3 6-vee 7-129