MM5450YN

MM5450_06 MICREL | Alldatasheet

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■ RDS(on) (Max 5 Ω )@VGS=10V RDS(on) (Max 5.3Ω )@VGS=4.5V ■ Gate Charge (Typical 0.5nC) ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Logic N-Channel MOSFET Symbol TO-92 3. Drain 1. Source 2. Gate PRELIMINARY

Electrical Characteristics ( TJ = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -4 8 - m V / ° C IDSS Drain-Source Leakage Current VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125 °C -- 1 1000 uA IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 2.5 V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 500mA VGS = 4.5 V, ID = 75mA 1.55 1.9 5.3 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz -2 0 2 5 pFCoss Output Capacitance - 11 14 Crss Reverse Transfer Capacitance - 3 4 Dynamic Characteristics td(on) Turn-on Delay Time VDD =30V, ID =200mA, RG =50Ω VGS = 10 V (Note 2,3) -4 1 8 ns tr Rise Time - 2.5 15 td(off) Turn-off Delay Time - 17 44 tf Fall Time - 7 24 Qg Total Gate Charge VDS =30V, VGS =4.5V, ID =200mA (Note 2,3) - 0.5 0.65 nCQgs Gate-Source Charge - 0.15 - Qgd Gate-Drain Charge(Miller Charge) - 0.2 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Cond itions Min. Typ. Max. Unit. IS Maximum Continuous Diode Forward Current - - 200 mA VSD Diode Forward Voltage I S =200mA, VGS =0V (Note 2) -- 1 . 2 V ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

150℃ Notes :※ 1. VGS = 0V 2. 250µ s Pulse Test 25℃ IDR, Reverse Drain Current [A] VSD, Source-Drain voltage [V] 1.0 1.5 2.0 2.5 3.0 VGS = 4.5V VGS = 10V Note : T※ J = 25℃ RDS(ON), Drain-Source On-Resistance [mΩ ] ID, Drain Current [A] 02468 1 0 150 o C o C -55 o C Notes :※ 1. VDS = 10V 2. 250µ s Pulse Test ID, Drain Current [A] VGS, Gate-Source Voltage [V] VGS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Notes :※ 1. 250µ s Pulse Test 2. TC = 25℃ ID, Drain Current [A] VDS, Drain-Source Voltage [V] VDS = 30V VDS = 48V Note : I※ D = 200 mA VGS, Gate-Source Voltage [V] QG, Total Gate Charge [nC] 0 5 10 15 20 25 30 Crss Coss Ciss Notes :※ 1. VGS = 0V 2. f=1MHz Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance [pF] VDS, Drain-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics 2N7000 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

-100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 Notes :※ 1. VGS = 10 V 2. ID = 500 mA RDS(ON), (Normalized) Drain-Source On-Resistance TJ, Junction Temperature [ o -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes :※ 1. VGS = 0 V 2. ID = 250 µ A BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [ o Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature 2N7000 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

Fig 10. Switching Time Test Circuit & Waveforms 2N7000 Fig. 9. Gate Charge Test Circuit & Waveforms Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) V VDS RL DUT Pulse Generator RG Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) V VDS RL DUT Pulse Generator RG 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 4.5V Qg Qgs Qgd Charge VGS V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 4.5V Qg Qgs Qgd Charge VGS V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 . 5 4 0 . 1 0 0 I2 . 5 4 0 . 1 0 0 J 0.33 0.48 0.013 0.019 2N7000 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1. Source 2. Gate 3. Drain A B C G E F D H J I