MM50G3T120BM MACMIC | Alldatasheet
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W V g MM50G3T120BM 1200V 50A IGBT June 2020 Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems Type VCES IC VCE(sat) TJ=25° C TJmax Marking Package MM50G3T120BM 1200V 50A 1.8V 175° C MM50G3T120BM TO-247 Plus ABSOLUTE MAXIMUM RATINGS(T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 1200 VVGES Gate Emitter Voltage ± 20 IC DC Collector Current TC=25℃ 83 ATC=110℃ 50 ICpuls Pulsed collector current,tp limited by TJmax 150 Ptot Power Dissipation Per IGBT 535 VRRM Repetitive Reverse Voltage TJ=25℃ 1200 IF(AV) Average Forward Current TC=95℃ 50 AIFpuls Diode pulsed current,tp limited by TJmax 150 TJmax Max. Junction Temperature 175 ℃TJop Operating Temperature -40~175 Tstg Storage Temperature -55~150 Weight 8 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com 1.Gate 2.Collector 3.Emitter All d ata sheet.com
µA mA nA µC nF pF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /W MM50G3T120BM IGBT ELECTRICAL CHARACTERISTICS (T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=2.0mA 5.2 5.8 6.5 VVCE(sat) Collector Emitter Saturation Voltage IC=50A, VGE=15V, TJ=25℃ 1.8 2.25 IC=50A, VGE=15V, TJ=125℃ 2.1 IC=50A, VGE=15V, TJ=150℃ 2.15 ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ 100 VCE=1200V, VGE=0V, TJ=150℃ 10 IGES Gate Leakage Current VCE=0V,VGE=± 20V, TJ=25℃ -400 400 Qg Gate Charge VCE=600V, IC=50A , VGE=15V 0.27 Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 3.5 Cres Reverse Transfer Capacitance 160 td(on) Turn on Delay Time VCC=600V,IC=50A RG =10Ω, VGE=± 15V, Inductive Load TJ=25℃ 25 TJ=125℃ 30 TJ=150℃ 30 tr Rise Time TJ=25℃ 28 TJ=125℃ 30 TJ=150℃ 30 td(off) Turn off Delay Time VCC=600V,IC=50A RG =10Ω, VGE=± 15V, Inductive Load TJ=25℃ 220 TJ=125℃ 260 TJ=150℃ 280 tf Fall Time TJ=25℃ 100 TJ=125℃ 160 TJ=150℃ 180 Eon Turn on Energy VCC=600V,IC=50A RG =10Ω, VGE=± 15V, Inductive Load TJ=125℃ 6.2 TJ=150℃ 7.1 Eoff Turn off Energy TJ=125℃ 3.9 TJ=150℃ 4.3 ISC Short Circuit Current tpsc≤10µ S , VGE=15V TJ=125℃,VCC=800V 210 A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.28 Anti-Parallel Diode ELECTRICAL CHARACTERISTICS (T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VF Forward Voltage IF=50A , VGE=0V, TJ =25℃ 1.8 2.3 VIF=50A , VGE=0V, TJ =125℃ 1.55 IF=50A , VGE=0V, TJ =150℃ 1.5 trr Reverse Recovery Time IF=50A , VR=600V dIF/dt=-1300A/μs TJ =150℃ 470 IRRM Max. Reverse Recovery Current 58 QRR Reverse Recovery Charge 12.4 Erec Reverse Recovery Energy 4.5 RthJCD Junction to Case Thermal Resistance （ Per Diode） 0.49 All d ata sheet.com
Figure 11. Package Outline