MM4150 WILLAS | Alldatasheet
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Technical content
F L E M - i n imF L E M - i n i mF L E M - i n i mF L E M - i n imF L E M - i n i m Dimensions in millimeters
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3.40 3.20 1.40 1.30 0.4 0.2 MM4150 1N4150 mini-MELF SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items S ymbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery Time trr 4 ns Power Dissipation P tot 500 mW Forward Current IF 200 mA Junction Temp. Tj -65 to 200 °C Storage Temp. Tstg -65 to 200 °C Mechanical Data Items Materials Package M ini MELF Case Hermetically sealed glass Lead/Finish Double stud/Solder Plating Chip Glass Passivated Electrical Characteristics (Ta=25°C) Ratings Symbol Ratings Unit Minimum Breakdown Voltage @IR= 100uA BV 75 V Peak Forward Surge Current PW< 1sec. IFsurge 500 mA Maximum Forward Voltage IF= 200mA VF 1.0 V Maximum Reverse Current VR= 50V IR 100 nA Maximum Junction Capacitance VR= 0, f= 1 MHz Cj 4 pF Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100Ω trr 4 ns Maximum Thermal Resistance R θJA 0.35 °C/mW