MM40G3T120B MACMIC | Alldatasheet
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APPLICATIONS
MM40G3T120B 1200V 40A 19 V 175°C MM40G3T120B TO 247 □ Medical applications □ Motion/servo control □ UPS systems Type VCES IC VCE(sat) TJ=25°C □ IGBT chip in trench FS-technology □ Low switching losses □ V CE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ High frequency switching application MM40G3T120B 1200V 40A IGBT May 2018 Version 01 RoHS Compliant PRODUCT FEATURES 1.Gate 2.Collector 3.Emitter Unit W V Nm g Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com Weight 8 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Storage Temperature -55~150 Torque to heatsink Recommended（M3） 1.1 TJmax Max. Junction Temperature 175 ℃TJop Operating Temperature -40~175 Tstg IF(AV) Average Forward Current TC=95℃ 40 AIFpuls Diode pulsed current,tp limited by TJmax 80 Ptot Power Dissipation Per IGBT 395 VRRM Repetitive Reverse Voltage TJ=25℃ 1200 ATC=110℃ 40 ICpuls Pulsed collector current,tp limited by TJmax 140 Gate Emitter Voltage ±20 IC DC Collector Current TC=25℃ 70 ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 1200 VVGES MM40G3T120B 1200 V 40A 1.9V 175°C MM40G3T120B TO-247 1 1 All d ata sheet.com
µA mA nA nC nF pF ns ns ns ns ns ns ns ns ns nsT J=25℃ 100 TJ=125℃ 290 TJ=150℃ 310 TJ=150℃ 45 td(off) Turn off Delay Time VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ 250 tr Rise Time TJ=25℃ 40 TJ=125℃ 45 TJ=150℃ 40 td(on) Turn on Delay Time VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ 30 TJ=125℃ Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 2.8 Cres Reverse Transfer Capacitance 110 400 Qg Gate Charge VCE=600V, IC=40A , VGE=15V 210 100 VCE=1200V, VGE=0V, TJ=150℃ 10 IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -400 IC=40A, VGE=15V, TJ=150℃ 2.35 ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ VVCE(sat) Collector Emitter Saturation Voltage IC=40A, VGE=15V, TJ=25℃ 1.9 2.35 IC=40A, VGE=15V, TJ=125℃ 2.25 VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=1mA 5.0 5.8 6.5 MM40G3T120B IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. ns ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /W E rec Reverse Recovery Energy 1.85 RthJCD Junction to Case Thermal Resistance （ Per Diode） 0.7 QRR Reverse Recovery Charge 5 trr Reverse Recovery Time IF=40A , VR=600V dIF/dt=-850A/μs TJ =150℃ 350 IRRM Max. Reverse Recovery Current 39.5 VIF=40A , VGE=0V, TJ =125℃ 1.85 IF=40A , VGE=0V, TJ =150℃ 1.75 VF Forward Voltage IF=40A , VGE=0V, TJ =25℃ 2.05 2.55 Anti-Parallel Diode ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.35 TJ=150℃ 4.7 ISC Short Circuit Current tpsc≤10µS , VGE=15V TJ=125℃,VCC=600V 150 TJ=150℃ 5.4 Eoff Turn off Energy TJ=125℃ 4.2 TJ=150℃ 180 Eon Turn on Energy VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load TJ=125℃ 4.9 tf Fall Time TJ=125℃ 150Inductive Load 2 2 All d ata sheet.com
Figure 13. Package Outline