MM2102A NSC | Alldatasheet
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National NMOS RAMs | 2 Semiconductor = MM2102A, MM2102AL Family 8 1024-Bit (1024 x 1) Static RAMs z General Description . 5 The MM2102A family of high speed 1024 x 1-bit static) @ maximum operating current of 33 mA and a guar- random access read/write memories is manufactured anteed standby mode down to a power supply voltage using N-channel depletion-mode silicon gate technology. of 1.6V._—— Static storage cells eliminate the need for clocks or refresh circuitry and the resultant cost associated with Features _ r them. = Single 5V supply PY ‘Low threshold silicon gate N-channel technology allows . 3 complete DTL/TTL compatibility of all inputs and = All inputs and outputs directly DTL/TTL compatible | 33, outputs 2 well as 2 single 5V supply. The separate = chip enable input (CE) controlling the TRI-STATE® | Static operation—no clocks or refresh output allows easy memory expansion by OR-tying ~ individual devices to 2 data bus. Data in and data out TRISTATE odtout for bus interface have the same polarity. “. © All inputs protected against static charge In addition to the MM2102A, a low power version, the MM2102AL, is also available. This selection offers =| Access time down to 250 ns Block Diagram Connection Diagram Duaktn-Line Package aT ae pe a 3 wt Sa cau. aT] 2emows tow at wad nos mentions a : " sexta out ES oaram uP] a vee | wt eo wot nwo 2 ora pm ae DATA ott Tor EW note [_sxmrenen | caer nanaar orgs umwer eet MIMeIO2As2L | MMETOZAN'EL TST Titty perereey erties ACAI At MMZ102AS-L (MM2102AN-L_ Dae aor 6 8 "Sh "h “S Manzt0zasau- MMZI0ZAN-4L. RR RS MMZ102A5-4 MZ 102AN4 MM2102A6L MM2102ANSL MM2102056 MM21020N-6 ‘See NS Package SIGA See NS Package NIGA Truth Table Logic Symbol CE RW Din Dour MODE H x x Hi-Z Not selected t b t L Write “0” LoL HH Write 1°" Lou X DouT Read
= | Absolute Maximum Ratings (note 1) Operating Conditions . E tan a Ts Storage Temperature ~68°C to +150°C Ambient Temperature (Ta) “0 70 °c =a Tamer Dissipation (ordering, 10 ssondap o's Input Low Voltage 05 08 v = . & | DC Electrical Characteristics = Ta = 0°C to +70°C, Veg = +5%, unless otherwise specified. =~ MMzt02A, MM2102A.L, MM2102A.2, MM2102A.2L, SYMBOL ‘MM2102A-4, MM2102A-4L, ‘UNITS o MM2102A-6 MM2102A-6L nN [MIN [Max [min [Max | Ss to Input Load Current VIN = 0 to 5.25V 10 pA Ss ‘Low ‘Output Leakage Current CE = 2V, Vout = 2.4V 5 aA lot Output Leakage Current CE = 2V, Vout = 04v -10 uA lec Power Supply Current All Inputs = 5.25V, 45 mA Data Output Open, Tas 25°C foc Power Supply Current All Inputs = 5.28V, 60 mA Data Output Open, Ta=0°C Vou Output Low Voltage fot = 32ma 04 v Vor | Output High Voitage ton = 200 uA v Note 1: “Absolute Maximum Ratings” are those values beyond which the device may be permanently damaged. They do not mean the device may be operated at these values. (With standard load) Ta = 0°C to +70°C, Vc = 5V 5% unless otherwise specified. MaM2102A-2, MMZ1028, MN2TO2A-4, MMZIO2ZA-6, SYMBOL PARAMETER Mm210zA-2L MMz1028-L mv2tozaat_| mmzioza.e._| units READ CYCLE (Figure 1) tac | Read Cycle 250 350 450 650 7 ta | Access Time 650 ns reo | chip Enable to Output 200 ms tot | Previous Read Data Vaid | 40 40 40 50 ns with Respect to Address toH2 | Previous Read Dota valid | 0 o ° 0 ns with Respect to Chip Enable WRITE CYCLE (Figure 2) wwe | Weve cycle 250 350 40 50 7 raw | Address to Write Set Up 20 20 20 20 ns twe Write Pulse Width 100 150 200 200 ns rwr | Write Recovery Time ° 0 ° ° ns row | Date Setup Time ry 125 175 175 ne 10H | Data Hold Time ° ° ° ° ns tcw | Chip Enable To Write 100 150 200 200 ns SetUp
FIGURE 1. Read Cycle FIGURE 2. Weite Cycle Note): Input reference level for timing is 1.5V. Note@): VoL O.8V is reference level for output low. Note@): Input rise and fall times are 10 ns.
8 Recovery Time tac tre ns
Note 3: Typical values at Ta = 25°C. .