MM20G3R135B MACMIC | Alldatasheet
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APPLICATIONS
□ Inverterized microwave ovens □ Resonant converters □ Soft switching applications □ 1350V Reverse conducting IGBT with monolithic body diode □ V CE(sat) with positive temperature coefficient □ Low switching losses □ HInductive cooking □ Low EMI MM20G3R135B 1350V 20A RC- IGBT March 2018 Preliminary RoHS Compliant PRODUCT FEATURES 1.Gate 2.Collector 3.Emitter Unit W V Nm gWeight 8 Storage Temperature -55~150 Torque to heatsink Recommended（M3） 1.1 TJmax Max. Junction Temperature 175 ℃TJop Operating Temperature -40~175 Tstg IF(AV) Average Forward Current TC=100℃ 20 AIFpuls Diode pulsed current,tp limited by TJmax 60 Ptot Power Dissipation Per IGBT 333 VRRM Repetitive Reverse Voltage TJ=25℃ 1350 ATC=100℃ 20 ICpuls Pulsed collector current,tp limited by TJmax 60 Gate Emitter Voltage ±20 IC DC Collector Current TC=25℃ 40 ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 1350 VVGES TJmax Marking Package MM20G3R135B 1350V 20A 1.6V 175°C MM20G3R135B TO-247 Type VCES IC VCE(sat) TJ=25°C 1 Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China All d ata sheet.com
µA mA nA Ω µC nF pF ns ns ns ns ns ns ns R gint Integrated Gate Resistor none 350 t Fl l T i TJ=25℃ 80 td(off) Turn off Delay Time VCC=600V,IC=20A RG =20Ω, VGE=±15V, TJ=25℃ 250 TJ=125℃ 110 tr Rise Time TJ=25℃ 50 TJ=125℃ td(on) Turn on Delay Time VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ 70 TJ=125℃ Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 1.65 Cres Reverse Transfer Capacitance 50 100 Qg Gate Charge VCE=600V, IC=20A , VGE=15V 0.195 100 VCE=1350V, VGE=0V, TJ=175℃ 2.5 IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -100 IC=20A, VGE=15V, TJ=175℃ 1.9 ICES Collector Leakage Current VCE=1350V, VGE=0V, TJ=25℃ VVCE(sat) Collector Emitter Saturation Voltage IC=20A, VGE=15V, TJ=25℃ 1.6 1.8 IC=20A, VGE=15V, TJ=125℃ 1.8 VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=0.5mA 5.1 5.8 6.4 MM20G3R135B IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. ns mJ mJ mJ mJ K /W Unit K /WR thJCD Junction to Case Thermal Resistance （ Per Diode） 0.45 VIF=20A , VGE=0V, TJ =125℃ 1.73 IF=20A , VGE=0V, TJ =175℃ 1.8 VF Forward Voltage IF=20A , VGE=0V, TJ =25℃ 1.6 1.8 Body Diode ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. TJ=125℃ 1.4 RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.45 TJ=125℃ 2.4 Eoff Turn off Energy TJ=25℃ 1.1 100 Eon Turn on Energy VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ 2 tf Fall Time J TJ=125℃Inductive Load 2 2 All d ata sheet.com
Dimensions in (mm) Package Outline 3 3 All d ata sheet.com