MM120G3T65BM MACMIC | Alldatasheet
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W V g MM120G3T65BM 650V 120A IGBT June 2020 Version 01 RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Motor control □ UPS/PFC □ General purpose inverters Type VCES IC VCE(sat) TJ=25°C TJmax Marking Package MM120G3T65BM 650V 120A 1.6V 175°C MM120G3T65BM TO-247 Plus ABSOLUTE MAXIMUM RATINGS(T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 650 VVGES Gate Emitter Voltage ±20 IC DC Collector Current TC=25℃ 200 ATC=110℃ 120 ICpuls Pulsed collector current,tp limited by TJmax 360 Ptot Power Dissipation Per IGBT 750 VRRM Repetitive Reverse Voltage TJ=25℃ 650 IF(AV) Average Forward Current TC=95℃ 120 AIFpuls Diode pulsed current,tp limited by TJmax 360 TJmax Max. Junction Temperature 175 ℃TJop Operating Temperature -40~175 Tstg Storage Temperature -55~150 Weight 8 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com 1.Gate 2.Collector 3.Emitter All d ata sheet.com
µA mA nA µC nF pF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /W MM120G3T65BM IGBT ELECTRICAL CHARACTERISTICS (T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=2.0mA 4.3 5.3 6.3 VVCE(sat) Collector Emitter Saturation Voltage IC=120A, VGE=15V, TJ=25℃ 1.6 2 IC=120A, VGE=15V, TJ=125℃ 1.9 IC=120A, VGE=15V, TJ=150℃ 1.95 ICES Collector Leakage Current VCE=650V, VGE=0V, TJ=25℃ 100 VCE=650V, VGE=0V, TJ=150℃ 5 IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25℃ -200 200 Qg Gate Charge VCE=400V, IC=120A , VGE=15V 0.55 Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 7.2 Cres Reverse Transfer Capacitance 320 td(on) Turn on Delay Time VCC=400V,IC=120A RG =5.1Ω, VGE=+15/-8V, Inductive Load TJ=25℃ 60 TJ=125℃ 70 TJ=150℃ 70 tr Rise Time TJ=25℃ 60 TJ=125℃ 65 TJ=150℃ 65 td(off) Turn off Delay Time VCC=400V,IC=120A RG =5.1Ω, VGE=+15/-8V, Inductive Load TJ=25℃ 190 TJ=125℃ 220 TJ=150℃ 230 tf Fall Time TJ=25℃ 80 TJ=125℃ 140 TJ=150℃ 150 Eon Turn on Energy VCC=400V,IC=120A RG =5.1Ω, VGE=+15/-8V, Inductive Load TJ=125℃ 6.6 TJ=150℃ 7 Eoff Turn off Energy TJ=125℃ 4.7 TJ=150℃ 5.1 ISC Short Circuit Current tpsc≤6µ S , VGE=15V TJ=125℃,VCC=400V 540 A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.2 Anti-Parallel Diode ELECTRICAL CHARACTERISTICS (T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VF Forward Voltage IF=120A , VGE=0V, TJ =25℃ 1.8 2.3 VIF=120A , VGE=0V, TJ =125℃ 1.6 IF=120A , VGE=0V, TJ =150℃ 1.55 trr Reverse Recovery Time IF=120A , VR=400V dIF/dt=-1300A/μs TJ =150℃ 300 IRRM Max. Reverse Recovery Current 52 QRR Reverse Recovery Charge 8.1 Erec Reverse Recovery Energy 2.4 RthJCD Junction to Case Thermal Resistance （ Per Diode） 0.4 All d ata sheet.com
Figure 11. Package Outline