MM118-XX MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
  • Compact and rugged construction offering weight and space savings
  • Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “T” suffix to part number, see option below)
  • HPM (Hermetic Power Module)
  • Isolation voltage capability (in reference to the base) in excess of 3kV
  • Very low thermal resistance
  • Thermally matched construction provides excellent temperature and power cycling capability
  • Additional voltage ratings or terminations available upon request PART NUMBER SYMBOL MM118-06 MM118-12 Collector-to-Emitter Breakdown Voltage (Gate shorted to Emitter), @ Tj≥ 25°C BVCES 600 V 1200 V Collector-to-Gate Breakdown Voltage @ Tj≥ 25°C, RGS= 1 MΩ BVCGR 600 V 1200 V Gate-to-Emitter Voltage continuous transient VGES VGEM +/- 20 V +/- 30 V +/- 20 V +/- 30 V Continuous Collector Current Tj= 25°C Tj= 90°C IC25 IC90 60 A 32 A 52 A 33 A Peak Collector Current, pulsewidth limited by Tj max ICM 120 A 104 A Power Dissipation PD 165 W 165 W Thermal resistance, junction to base per switch RΘjc, max RΘ , typ 0.75°C/W 0.5°C/W 0.75°C/W 0.5°C/W Maximum Ratings per switch @ 25°C (unless otherwise specified) Mechanical Outline Datasheet# MSC0321A 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256

3 PHASE N-CHANNEL

TRANSISTOR (IGBT) BRIDGE

DESCRIPTION SYMBOL CONDITIONS PART MIN TYP. MAX UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BVCES VGS = 0 V, IC = 250 µA MM118-06 MM118-12 600 1200 V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 250 µA VCE = VGE, IC = 2.5 mA VCE = VGE, IC = 350 µA MM118-06F MM118-06L MM118-12 2.5 4.5 5.5 5.0 6.5 V Gate-to-Emitter Leakage Current IGES VGE = ± 20VDC, VCE = 0 TJ = 25°C TJ = 125°C (ALL) ±100 ±200 nA Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) ICES VCE =0.8•BVCES TJ = 25°C VGE = 0 V TJ = 125°C (ALL) 200 1000 µA Collector-to-Emitter Saturation Voltage (1) VCE(sat) VGE= 15V, IC= 30A TJ = 25°C IC= 60A TJ = 25°C IC= 30A TJ = 125°C IC= 30A TJ = 25°C VGE= 15V, IC= 25A TJ = 25°C IC= 50A TJ = 25°C IC= 25A TJ = 125°C MM118-06F MM118-06F MM118-06F MM018-06L MM118-12 MM118-12 MM118-12 2.2 3.5 2.2 2.2 2.7 3.4 3.3 2.9 tbd tbd 2.5 3.2 tbd 3.9 V Forward Transconductance (1) gfs VCE ≥ 10 V; IC = 30 A VCE ≥ 10 V; IC = 30 A MM118-06F MM118-06L MM118-12 8.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres VGE = 0 V, VCE = 25 V, f = 1 MHz MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 2500 2760 1650 230 240 250 110 tbd tbd 2200 tbd tbd 380 tbd tbd 160 pF INDUCTIVE LOAD, Tj= 25°C (2,3) Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri Eon td(off) tfi Eoff VGE = 15 V, L= 100 µH note 2, 3 for MM118-06: VCE = 480 V, IC = 30 A, RG = 4.7 Ω for MM118-12: VCE= 600 V, IC= 25 A, RG = 47 Ω MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 130 3.6 175 400 420 125 400 1.3 2.4 tbd tbd 110 tbd tbd 100 tbd tbd 560 175 tbd ns ns ns ns ns ns mJ ns ns ns ns ns ns mJ mJ mJ Electrical Parameters, per switch @ 25°C (unless otherwise specified) MM-XX SERIES DESCRIPTION SYMBOL MM118-06 MM118-12 Short Circuit Reverse Current (RBSOA) @ Tj= 125°C, VCE= 0.8 x VCES Imax 64 A 66 A Junction and Storage Temperature Range (°C) Tj, Tstg -55 to +150 -55 to +150 Continuous Source Current (parallel Diode) IS 60 A 50 A Pulse Source Current (parallel Diode) ISM 100 A 100 A Maximum Ratings @ 25°C (unless otherwise specified) - continued Datasheet# MSC0321A

INDUCTIVE LOAD, Tj= 125°C (2,3) Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri Eon td(off) tfi Eoff VGE = 15 V, L= 100 µH note 2, 3 for MM118-06: VCE = 480 V, IC = 30 A, RG = 4.7 Ω for MM118-12: VCE= 600 V, IC= 25 A, RG = 47 Ω MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 130 4.2 250 540 420 260 600 4.2 tbd tbd tbd tbd tbd tbd tbd 1000 tbd tbd 1500 tbd ns ns ns ns ns ns mJ mJ mJ ns ns ns ns ns ns mJ mJ mJ Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Qg Qge Qgc VGE = 15 V, for MM118-06: VCE = 300V, IC= 30 A for MM118-12: VCE= 600 V, IC= 25 A MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 125 110 160 150 150 tbd tbd tbd nC Antiparallel diode forward voltage (1) VF IE= 15 A TJ = 25 °C IE= 30 A TJ = 25 °C IE= 50 A TJ = 25 °C IE= 15 A TJ = 150 °C IE= 10 A TJ = 25 °C IE= 10 A TJ = 100 °C MM118-06 MM118-06 MM118-06 MM118-06 MM118-12 MM118-12 1.7 1.9 2.4 1.5 1.3 V Antiparallel diode reverse recovery time trr IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C MM118-06 MM118-06 MM118-12 MM118-12 140 100 tbd ns Antiparallel diode reverse recovery charge Qrr IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C MM118-06 MM118-06 MM118-12 MM118-12 160 320 tbd 800 nC Antiparallel diode peak recovery current IRM IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C MM118-06 MM118-06 MM118-12 MM118-12 4.2 tbd A Notes (1) Pulse test, t £ 300 ms, duty cycle d £ 2% (2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures. (3) switching losses include “tail” losses (4) Microsemi does not manufacture the igbt die; contact Microsemi for details.