MM10G3T120B MACMIC | Alldatasheet
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W V Nm g MM10G3T120B 1200V 10A IGBT March 2020 Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems Type VCES IC VCE(sat) TJ=25° C TJmax Marking Package MM10G3T120B 1200V 10A 1.85V 175° C MM10G3T120B TO-247 ABSOLUTE MAXIMUM RATINGS(T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 1200 VVGES Gate Emitter Voltage ± 20 IC DC Collector Current TC=25℃ 17 ATC=110℃ 10 ICpuls Pulsed collector current,tp limited by TJmax 40 Ptot Power Dissipation Per IGBT 125 VRRM Repetitive Reverse Voltage TJ=25℃ 1200 IF(AV) Average Forward Current TC=110℃ 10 AIFpuls Diode pulsed current,tp limited by TJmax 40 TJmax Max. Junction Temperature 175 ℃TJop Operating Temperature -40~175 Tstg Storage Temperature -55~150 Torque to heatsink Recommended（M3） 1.1 Weight 8 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com 1.Gate 2.Collector 3.Emitter All d ata sheet.com
µA mA nA µC nF pF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /W MM10G3T120B IGBT ELECTRICAL CHARACTERISTICS (T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=0.4mA 5.2 6.0 6.5 VVCE(sat) Collector Emitter Saturation Voltage IC=10A, VGE=15V, TJ=25℃ 1.85 2.25 IC=10A, VGE=15V, TJ=125℃ 2.15 IC=10A, VGE=15V, TJ=150℃ 2.25 ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ 100 VCE=1200V, VGE=0V, TJ=150℃ 10 IGES Gate Leakage Current VCE=0V,VGE=± 20V, TJ=25℃ -400 400 Qg Gate Charge VCE=600V, IC=10A , VGE=15V 0.075 Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 0.75 Cres Reverse Transfer Capacitance 34 td(on) Turn on Delay Time VCC=600V,IC=10A RG =50Ω, VGE=± 15V, Inductive Load TJ=25℃ 22 TJ=125℃ 24 TJ=150℃ 24 tr Rise Time TJ=25℃ 29 TJ=125℃ 30 TJ=150℃ 30 td(off) Turn off Delay Time VCC=600V,IC=10A RG =50Ω, VGE=± 15V, Inductive Load TJ=25℃ 120 TJ=125℃ 150 TJ=150℃ 160 tf Fall Time TJ=25℃ 150 TJ=125℃ 190 TJ=150℃ 210 Eon Turn on Energy VCC=600V,IC=10A RG =50Ω, VGE=± 15V, Inductive Load TJ=125℃ 1.07 TJ=150℃ 1.16 Eoff Turn off Energy TJ=125℃ 0.65 TJ=150℃ 0.69 ISC Short Circuit Current tpsc≤10µ S , VGE=15V TJ=125℃,VCC=800V 40 A RthJC Junction to Case Thermal Resistance （ Per IGBT） 1.2 Anti-Parallel Diode ELECTRICAL CHARACTERISTICS (T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VF Forward Voltage IF=10A , VGE=0V, TJ =25℃ 1.9 2.4 VIF=10A , VGE=0V, TJ =125℃ 1.65 IF=10A , VGE=0V, TJ =150℃ 1.55 trr Reverse Recovery Time IF=10A , VR=600V dIF/dt=-320A/μs TJ =150℃ 350 IRRM Max. Reverse Recovery Current 8 QRR Reverse Recovery Charge 1.05 Erec Reverse Recovery Energy 0.38 RthJCD Junction to Case Thermal Resistance （ Per Diode） 2.1 All d ata sheet.com
Figure 13. Package Outline