KE1XFP100M168SF0 NXP | Alldatasheet

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Kinetis KE1xF with up to 512 KB Flash Up to 168 MHz ARM® Cortex®-M4 Based Microcontroller The KE1xF microcontroller is built on the ARM® Cortex®-M4 processor with stronger performance and higher memory densities in multiple packages. This device offers up to 168 MHz performance with integrated single-precision floating point unit (FPU) and digital signal processor (DSP). Embedded flash memory sizes range from 256 KB to 512 KB. Core Processor and System

  • ARM ® Cortex®-M4 core, supports up to 168 MHz frequency with 1.25 Dhrystone MIPS per MHz
  • ARM Core based on the ARMv7 Architecture and Thumb®-2 ISA
  • Integrated Digital Signal Processor (DSP)
  • Configurable Nested Vectored Interrupt Controller (NVIC)
  • Single-precision Floating Point Unit (FPU)
  • 16-channel DMA controller extended up to 64 channels with DMAMUX Reliability, safety and security
  • Error-correcting code (ECC) on Flash and SRAM memories
  • System memory protection unit (MPU) module
  • Flash Access Control (FAC)
  • Cyclic Redundancy Check (CRC) generator module
  • 128-bit unique identification (ID) number
  • Internal watchdog (WDOG) with independent clock source
  • External watchdog monitor (EWM) module
  • ADC self calibration feature
  • On-chip clock loss monitoring Human-machine interface (HMI)
  • Supports up to 92 interrupt request (IRQ) sources
  • Up to 89 GPIO pins with interrupt functionality
  • 8 high drive pins
  • Digital filters Memory and memory interfaces
  • Up to 512 KB program flash with ECC
  • Up to 64 KB SRAM with ECC
  • 64 KB FlexNVM with ECC for data flash and with EEPROM emulation
  • 4 KB FlexRAM for EEPROM emulation
  • 8 KB I/D cache to minimize performance impact of memory access latencies
  • Boot ROM with built in bootloader Mixed-signal analog
  • 3× 12-bit analog-to-digital converter (ADC) with up to 16 channel analog inputs per module, up to 1M sps
  • 3× high-speed analog comparators (CMP) with internal 8-bit digital to analog converter (DAC)
  • 1× 12-bit digital to analog converter (DAC) Timing and control
  • 4× Flex Timers (FTM) for PWM generation, offering up to 32 standard channels
  • 1× Low-Power Timer (LPTMR) working at Stop mode, with flexible wake up control
  • 3× Programmable Delay Block (PDB) with flexible trigger system, to provide accurate delay and trigger generation for inter-module synchronization
  • 1× Low-power Periodic Interrupt Timer (LPIT) with 4 independent channels, for general purpose
  • Pulse Width Timer (PWT)
  • Real timer clock (RTC) MKE1xF512VLL16 MKE1xF512VLH16 MKE1xF256VLL16 MKE1xF256VLH16

100 LQFP (LL)

14x14x1.4 mm Pitch 0.5 mm

64 LQFP (LH)

10x10x1.4 mm Pitch 0.5 mm NXP Semiconductors KE1xFP100M168SF0 Data Sheet: Technical Data Rev. 4.1, 11/2021 NXP reserves the right to change the production detail specifications as may be required to permit improvements in the design of its products.

  • 4 - 40 MHz fast external oscillator (OSC)
  • 32 kHz slow external oscillator (OSC32)
  • 48 MHz high-accuracy (up to ±1%) fast internal reference clock (FIRC) for high-speed run
  • 8 MHz / 2 MHz high-accuracy (up to ±3%) slow internal reference clock (SIRC) for low-speed run
  • 128 kHz low power oscillator (LPO)
  • Phased lock loop (PLL)
  • Up to 50 MHz DC external square wave input clock
  • System clock generator (SCG)
  • Real time counter (RTC) Power management
  • Low-power ARM Cortex-M4 core with excellent energy efficiency
  • Power management controller (PMC) with multiple power modes: HSRun, Run, Wait, Stop, VLPR, VLPW and VLPS
  • Supports clock gating for unused modules, and specific peripherals remain working in low power modes
  • POR, LVD/LVR Operating Characteristics
  • Voltage range: 2.7 to 5.5 V
  • Ambient temperature range: –40 to 105 °C Connectivity and communications interfaces
  • TriggerMUX: for module inter-connectivity
  • 3× low-power universal asynchronous receiver/ transmitter (LPUART) modules with DMA support and working at Stop mode
  • 2 low-power serial peripheral interface (LPSPI) modules with DMA support and working at Stop mode
  • 2× low-power inter-integrated circuit (LPI2C) modules with DMA support and working at Stop mode
  • Up to 2 ×FlexCAN modules, with flexible message buffers and mailboxes
  • FlexIO module for flexible and high performance serial interfaces emulation Debug functionality
  • Serial Wire JTAG Debug Port (SWJ-DP) combines
  • Debug Watchpoint and Trace (DWT)
  • Instrumentation Trace Macrocell (ITM)
  • Test Port Interface Unit (TPIU)
  • Flash Patch and Breakpoints (FPB) Related Resources Type Description Resource Product Brief The Product Brief contains concise overview/summary information to enable quick evaluation of a device for design suitability. KE1xF512PB 1 Reference Manual The Reference Manual contains a comprehensive description of the structure and function (operation) of a device. KE1xFP100M168SF0RM 1 Data Sheet The Data Sheet includes electrical characteristics and signal connections. This document: KE1xFP100M168SF0 Chip Errata The chip mask set Errata provides additional or corrective information for a particular device mask set. Kinetis_E_0N79P 1 Kinetis_E_1N79P 1 Package drawing Package dimensions are provided in package drawings. 100-LQFP: 98ASS23308W 64-LQFP: 98ASS23234W 1. To find the associated resource, go to http://www.nxp.com and perform a search using this term. 2 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Figure 1. Functional block diagram

5.1.4 Relationship between ratings and operating

5.1.5 Guidelines for ratings and operating

4 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

1 Ordering information

The following chips are available for ordering. Table 1. Ordering information

  1. INT: interrupt pin numbers; HD: high drive pin numbers

2 Overview

The following figure shows the system diagram of this device.

Ordering information

Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 5 NXP Semiconductors

16 KB ROM

Figure 2. System diagram The crossbar switch connects bus masters and slaves using a crossbar switch structure.

2.1 System features

The following sections describe the high-level system features.

2.1.1 ARM Cortex-M4 core

2.1.2 NVIC

also differs in number of interrupt sources and supports 240 interrupt vectors. can be used to wake the MCU core from Wait and VLPW modes.

2.1.3 AWIC

wake MCU core from Partial Stop, Stop and VLPS modes. Table 2. AWIC Stop and VLPS Wake-up Sources Table continues on the next page...

Table 2. AWIC Stop and VLPS Wake-up Sources (continued)

2.1.4 Memory

  • Upto 512 KB of embedded program flash memory.
  • Upto 64 KB of embedded SRAM accessible (read/write) at CPU clock speed with 0 wait states.
  • The non-volatile memory is divided into several arrays:
  • 64 KB of embedded data flash memory
  • 4 KB of Emulated EEPROM
  • 16 KB ROM (built-in bootloader to support UART, I2C, and SPI interfaces) The program flash memory contains a 16-byte flash configuration field that stores default protection settings and security information. The page size of program flash is 4 KB. The protection setting can protect 32 regions of the program flash memory from unintended erase or program operations. The security circuitry prevents unauthorized access to RAM or flash contents from debug port.

2.1.5 Reset and boot

The following table lists all the reset sources supported by this device.

Table 3. Reset source

  1. Except PMC_LVDSC1[LVDV] and PMC_LVDSC2[LVWV]
  2. Except SMC_PMPROT, SMC_PMCTRL_RUM, SMC_PMCTRL_STOPM, SMC_STOPCTRL, SMC_PMSTAT
  3. Except RCM_RPC, RCM_MR, RCM_FM, RCM_SRIE, RCM_SRS, RCM_SSRS
  4. Except SCG_CSR and SCG_FIRCSTAT
  • internal flash
  • boot ROM Overview Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 9 NXP Semiconductors

Figure 3. Boot flow chart address, otherwise, it remaps to flash address.

2.1.6 Clock options

including the clocks for the system bus masters, system bus slaves, and flash memory . granular shutoff of modules.

48 MHz

Figure 4. Clocking block diagram

2.1.7 Security

2.1.7.1 Flash Access Control (FAC)

segments is controlled as the FAC provides a cycle-by-cycle evaluation of the access rights for each transaction routed to the on-chip flash memory. Configurability allows an increasing number of protected segments while supporting two levels of vendors adding their proprietary software to a device.

2.1.7.2 Error-correcting code (ECC)

The ECC detection is also supported on Flash and SRAM memories. It supports auto correction of one-bit error and reporting more than one-bit error.

2.1.8 Power management

The Power Management Controller (PMC) expands upon ARM’s operational modes of Run, Sleep, and Deep Sleep, to provide multiple configurable modes. These modes can be used to optimize current consumption for a wide range of applications. The WFI or WFE instruction invokes a Wait or a Stop mode, depending on the current configuration. For more information on ARM’s operational modes, See the ARM® Cortex® User Guide. The PMC provides High Speed Run (HSRUN), Normal Run (RUN), and Very Low Power Run (VLPR) configurations in ARM’s Run operation mode. In these modes, the MCU core is active and can access all peripherals. The difference between the modes is the maximum clock frequency of the system and therefore the power consumption. The configuration that matches the power versus performance requirements of the application can be selected. The PMC provides Wait (Wait) and Very Low Power Wait (VLPW) configurations in ARM’s Sleep operation mode. In these modes, even though the MCU core is inactive, all of the peripherals can be enabled and operate as programmed. The difference between the modes is the maximum clock frequency of the system and therefore the power consumption. The PMC provides Stop (Stop), Very Low Power Stop (VLPS) configurations in ARM’s Deep Sleep operational mode. In these modes, the MCU core and most of the peripherals are disabled. Depending on the requirements of the application, different portions of the analog, logic, and memory can be retained or disabled to conserve power. Overview 12 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Interrupt Controller (AWIC) are used to wake up the MCU from low power states. AWIC is used to wake up the MCU core from STOP and VLPS modes. NVIC, AWIC, please refer to the Reference Manual. Table 5. Peripherals states in different operational modes Run In Run mode, all device modules are operational. except the Low Voltage Detect (LVD) monitor, which is disabled. frequency except the Low Voltage Detect (LVD) monitor, which is disabled. The MCU core is placed into Sleep mode. can be used to wake up from an interrupt. command including flash programming/erasing.

2.1.9 Debug controller

capabilities. The standard ARM debug port supports SWD/JTAG interface.

2.2 Peripheral features

The following sections describe the features of each peripherals of the chip. 2.2.1 eDMA and DMAMUX The eDMA is a highly programmable data-transfer engine optimized to minimize any required intervention from the host processor. It is intended for use in applications where the data size to be transferred is statically known and not defined within the transferred data itself. The DMA controller in this device implements 16 channels which can be routed from up to 63 DMA request sources through DMA MUX module. Main features of eDMA are listed below:

  • All data movement via dual-address transfers: read from source, write to destination
  • 16-channel implementation that performs complex data transfers with minimal intervention from a host processor
  • Transfer control descriptor (TCD) organized to support two-deep, nested transfer operations
  • Channel activation via one of three methods
  • Fixed-priority and round-robin channel arbitration
  • Channel completion reported via programmable interrupt requests
  • Programmable support for scatter/gather DMA processing
  • Support for complex data structures

2.2.2 FTM

This device contains four FlexTimer modules. The FlexTimer module (FTM) is a two-to-eight channel timer that supports input capture, output compare, and the generation of PWM signals to control electric motor and power management applications. The FTM time reference is a 16-bit counter that can be used as an unsigned or signed counter. Several key enhancements of this module are made:

  • Signed up counter
  • Deadtime insertion hardware
  • Fault control inputs Overview 14 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors
  • Enhanced triggering functionality
  • Initialization and polarity control

2.2.3 ADC

This device contains three 12-bit SAR ADC modules. The ADC module supports hardware triggers from FTM, LPTMR, PIT, RTC, external trigger pin and CMP output. It supports wakeup of MCU in low power mode when using internal clock source or external crystal clock. ADC module has the following features:

  • Linear successive approximation algorithm with up to 12-bit resolution
  • Up to 16 single-ended external analog inputs
  • Support 12-bit, 10-bit, and 8-bit single-ended output modes
  • Single or continuous conversion
  • Configurable sample time and conversion speed/power
  • Input clock selectable from up to four sources
  • Operation in low-power modes for lower noise
  • Selectable hardware conversion trigger
  • Automatic compare with interrupt for less-than, greater-than or equal-to, within range, or out-of-range, programmable value
  • Temperature sensor
  • Hardware average function
  • Selectable Voltage reference: from external or alternate
  • Self-Calibration mode

2.2.3.1 Temperature sensor

This device contains one temperature sensor internally connected to the input channel of AD26, see ADC electrical characteristics for details of the linearity factor. The sensor must be calibrated to gain good accuracy, so as to provide good linearity, see also AN3031 for more detailed application information of the temperature sensor.

2.2.4 DAC

The 12-bit digital-to-analog converter (DAC) is a low-power, general-purpose DAC. The output of the DAC can be placed on an external pin or set as one of the inputs to the analog comparator, or ADC. Overview Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 15 NXP Semiconductors

DAC module has the following features:

  • On-chip programmable reference generator output. The voltage output range is from 1⁄4096 Vin to Vin, and the step is 1⁄4096 Vin, where Vin is the input voltage.
  • V in can be selected from two reference sources
  • Static operation in Normal Stop mode
  • 16-word data buffer supported with multiple operation modes
  • DMA support

2.2.5 CMP

There arethree analog comparators on this device.

  • Each CMP has its own independent 8-bit DAC.
  • Each CMP supports up to 7 analog inputs from external pins.
  • Each CMP is able to convert an internal reference from the bandgap.
  • Each CMP supports internal reference from the on-chip 12-bit DAC out.
  • Each CMP supports the round-robin sampling scheme. In summary, this allow the CMP to operate independently in VLPS and Stop modes, whilst being triggered periodically to sample up to 8 inputs. Only if an input changes state is a full wakeup generated. The CMP has the following features:
  • Inputs may range from rail to rail
  • Programmable hysteresis control
  • Selectable interrupt on rising-edge, falling-edge, or both rising and falling edges of the comparator output
  • Selectable inversion on comparator output
  • Capability to produce a wide range of outputs such as sampled, windowed, or digitally filtered
  • External hysteresis can be used at the same time that the output filter is used for internal functions
  • Two software selectable performance levels: Shorter propagation delay at the expense of higher power, and Low power with longer propagation delay
  • DMA transfer support
  • Functional in all power modes available on this MCU
  • The window and filter functions are not available in STOP mode
  • Integrated 8-bit DAC with selectable supply reference source and can be power down to conserve power Overview 16 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

2.2.6 RTC

The RTC is an always powered-on block that remains active in all low power modes. The time counter within the RTC is clocked by a 32.768 kHz clock sourced from an external crystal using the oscillator, or clock directly from RTC_CLKIN pin. RTC is reset on power-on reset, and a software reset bit in RTC can also initialize all RTC registers. The RTC module has the following features

  • 32-bit seconds counter with roll-over protection and 32-bit alarm
  • 16-bit prescaler with compensation that can correct errors between 0.12 ppm and 3906 ppm
  • Register write protection with register lock mechanism
  • 1 Hz square wave or second pulse output with optional interrupt

2.2.7 LPIT

The Low Power Periodic Interrupt Timer (LPIT) is a multi-channel timer module generating independent pre-trigger and trigger outputs. These timer channels can operate individually or can be chained together. The LPIT can operate in low power modes if configured to do so. The pre-trigger and trigger outputs can be used to trigger other modules on the device. This device contains one LPIT module with four channels. The LPIT generates periodic trigger events to the DMAMUX.

2.2.8 PDB

The Programmable Delay Block (PDB) provides controllable delays from either an internal or an external trigger, or a programmable interval tick, to the hardware trigger inputs of ADCs and/or generates the interval triggers to DACs, so that the precise timing between ADC conversions and/or DAC updates can be achieved. The PDB can optionally provide pulse outputs (Pulse-Out's) that are used as the sample window in the CMP block. The PDB module has the following capabilities:

  • trigger input sources and one software trigger source
  • 1 DAC refresh trigger output, for this device
  • configurable PDB channels for ADC hardware trigger
  • 1 pulse output, for this device Overview Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 17 NXP Semiconductors

2.2.9 LPTMR

The low-power timer (LPTMR) can be configured to operate as a time counter with optional prescaler, or as a pulse counter with optional glitch filter, across all power modes, including the low-leakage modes. It can also continue operating through most system reset events, allowing it to be used as a time of day counter. The LPTMR module has the following features:

  • 16-bit time counter or pulse counter with compare
  • Optional interrupt can generate asynchronous wakeup from any low-power mode
  • Hardware trigger output
  • Counter supports free-running mode or reset on compare
  • Configurable clock source for prescaler/glitch filter
  • Configurable input source for pulse counter

2.2.10 CRC

This device contains one cyclic redundancy check (CRC) module which can generate 16/32-bit CRC code for error detection. The CRC module provides a programmable polynomial, WAS, and other parameters required to implement a 16-bit or 32-bit CRC standard. The CRC module has the following features:

  • Hardware CRC generator circuit using a 16-bit or 32-bit programmable shift register
  • Programmable initial seed value and polynomial
  • Option to transpose input data or output data (the CRC result) bitwise or bytewise.
  • Option for inversion of final CRC result
  • 32-bit CPU register programming interface

2.2.11 LPUART

This product contains three Low-Power UART modules, and can work in Stop and VLPS modes. The module also supports 4× to 32× data oversampling rate to meet different applications. The LPUART module has the following features: Overview 18 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

  • Programmable baud rates (13-bit modulo divider) with configurable oversampling ratio from 4× to 32×
  • Transmit and receive baud rate can operate asynchronous to the bus clock and can be configured independently of the bus clock frequency, support operation in Stop mode
  • Interrupt, DMA or polled operation
  • Hardware parity generation and checking
  • Programmable 8-bit, 9-bit or 10-bit character length
  • Programmable 1-bit or 2-bit stop bits
  • Three receiver wakeup methods
  • Idle line wakeup
  • Address mark wakeup
  • Receive data match
  • Automatic address matching to reduce ISR overhead:
  • Address mark matching
  • Idle line address matching
  • Address match start, address match end
  • Optional 13-bit break character generation / 11-bit break character detection
  • Configurable idle length detection supporting 1, 2, 4, 8, 16, 32, 64 or 128 idle characters
  • Selectable transmitter output and receiver input polarity

2.2.12 LPSPI

This device contains two LPSPI modules. The LPSPI is a low power Serial Peripheral Interface (SPI) module that supports an efficient interface to an SPI bus as a master and/or a slave. The LPSPI can continue operating in stop modes provided an appropriate clock is available and is designed for low CPU overhead with DMA offloading of FIFO register accesses. The LPSPI module has the following features:

  • Command/transmit FIFO of 4 words
  • Receive FIFO of 4 words
  • Host request input can be used to control the start time of an SPI bus transfer Overview Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 19 NXP Semiconductors

2.2.13 FlexCAN

This device contains two FlexCAN modules. The FlexCAN module is a communication controller implementing the CAN protocol according to the ISO 11898-1 standard and CAN 2.0 B protocol specifications. Each FlexCAN module contains 16 message buffers. Each message buffer is 16 bytes. The FlexCAN module has the following features:

  • Flexible mailboxes of zero to eight bytes data length
  • Each mailbox configurable as receive or transmit, all supporting standard and extended messages
  • Individual Rx Mask registers per mailbox
  • Full-featured Rx FIFO with storage capacity for up to six frames and automatic internal pointer handling with DMA support
  • Transmission abort capability
  • Programmable clock source to the CAN Protocol Interface, either peripheral clock or oscillator clock
  • RAM not used by reception or transmission structures can be used as general purpose RAM space
  • Listen-Only mode capability
  • Programmable Loop-Back mode supporting self-test operation
  • Programmable transmission priority scheme: lowest ID, lowest buffer number, or highest priority
  • Time stamp based on 16-bit free-running timer
  • Global network time, synchronized by a specific message
  • Maskable interrupts
  • Independence from the transmission medium (an external transceiver is assumed)
  • Short latency time due to an arbitration scheme for high-priority messages
  • Low power modes, with programmable wake up on bus activity
  • Remote request frames may be handled automatically or by software
  • CAN bit time settings and configuration bits can only be written in Freeze mode
  • Tx mailbox status (Lowest priority buffer or empty buffer)
  • Identifier Acceptance Filter Hit Indicator (IDHIT) register for received frames
  • SYNCH bit available in Error in Status 1 register to inform that the module is synchronous with CAN bus
  • CRC status for transmitted message
  • Rx FIFO Global Mask register Overview 20 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors
  • Selectable priority between mailboxes and Rx FIFO during matching process
  • Powerful Rx FIFO ID filtering, capable of matching incoming IDs against either 128 extended, 256 standard, or 512 partial (8 bit) IDs, with up to 32 individual masking capability

2.2.14 LPI2C

This device contains two LPI2C modules. The LPI2C is a low power Inter-Integrated Circuit (I2C) module that supports an efficient interface to an I2C bus as a master and/or a slave. The LPI2C can continue operating in stop modes provided an appropriate clock is available and is designed for low CPU overhead with DMA offloading of FIFO register accesses. The LPI2C implements logic support for standard-mode, fast-mode, fast-mode plus and ultra-fast modes of operation. The LPI2C module also complies with the System Management Bus (SMBus) Specification, version 2. The LPI2C modules have the following features:

  • Standard, Fast, Fast+ and Ultra Fast modes are supported
  • HS-mode supported in slave mode
  • Multi-master support including synchronization and arbitration
  • Clock stretching
  • General call, 7-bit and 10-bit addressing
  • Software reset, START byte and Device ID require software support
  • For master mode:
  • command/transmit FIFO of 4 words
  • receive FIFO of 4 words
  • For slave mode:
  • separate I2C slave registers to minimize software overhead due to master/ slave switching
  • support for 7-bit or 10-bit addressing, address range, SMBus alert and general call address
  • transmit/receive data register supporting interrupt or DMA requests

2.2.15 FlexIO

The FlexIO is a highly configurable module providing a wide range of protocols including, but not limited to UART, I2C, SPI, Camera IF, LCD RGB, PWM/ Waveform generation. The module supports programmable baud rates independent of bus clock frequency, with automatic start/stop bit generation. Overview Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 21 NXP Semiconductors

The FlexIO module has the following features:

  • Functional in VLPR/VLPW/Stop/VLPS mode provided the clock it is using remains enabled
  • Four 32-bit double buffered shift registers with transmit, receive, and data match modes, and continuous data transfer
  • The timing of the shifter's shift, load and store events are controlled by the highly flexible 16-bit timer assigned to the shifter
  • Two or more shifters can be concatenated to support large data transfer sizes
  • Each 16-bit timers operates independently, supports for reset, enable and disable on a variety of internal or external trigger conditions with programmable trigger polarity
  • Flexible pin configuration supporting output disabled, open drain, bidirectional output data and output mode
  • Supports interrupt, DMA or polled transmit/receive operation

2.2.16 Port control and GPIO

The Port Control and Interrupt (PORT) module provides support for port control, digital filtering, and external interrupt functions. The GPIO data direction and output data registers control the direction and output data of each pin when the pin is configured for the GPIO function. The GPIO input data register displays the logic value on each pin when the pin is configured for any digital function, provided the corresponding Port Control and Interrupt module for that pin is enabled. The following figure shows the basic I/O pad structure. Pseudo open-drain pins have the p-channel output driver disabled when configured for open-drain operation. None of the I/O pins, including open-drain and pseudo open-drain pins, are allowed to go above VDD. NOTE The RESET_b pin is also a normal I/O pad with pseudo open- drain. Overview 22 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Figure 5. I/O simplified block diagram

  • all PIN support interrupt enable
  • Configurable edge (rising, falling, or both) or level sensitive interrupt type
  • Support DMA request
  • Asynchronous wake-up in low-power modes
  • Configurable pullup, pulldown, and pull-disable on select pins
  • Configurable high and low drive strength on selected pins
  • Configurable passive filter on selected pins
  • Individual mux control field supporting analog or pin disabled, GPIO, and up to chip-specific digital functions
  • Pad configuration fields are functional in all digital pin muxing modes. The GPIO module has the following features:
  • Port Data Input register visible in all digital pin-multiplexing modes
  • Port Data Output register with corresponding set/clear/toggle registers
  • Port Data Direction register
  • GPIO support single-cycle access via fast GPIO. Overview Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 23 NXP Semiconductors

3 Memory map

This device contains various memories and memory-mapped peripherals which are located in a 4 GB memory space. For more details of the system memory and peripheral locations, see the Memory Map chapter in the Reference Manual. Memory map 24 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

devices with different part numbers. See "Ordering information" in DataSheet for details. Figure 6. Memory map

4 Pinouts

4.1 KE1xF Signal Multiplexing and Pin Assignments

The following table shows the signals available on each pin and the locations of these pins on the devices supported by this document. The Port Control Module is responsible for selecting which ALT functionality is available on each pin. NOTE On this device, there are several special ADC channels which support hardware interleave between multiple ADCs. Taking ADC0_SE4 and ADC1_SE14 channels as an example, these two channels can work independently, but they can also be hardware interleaved. In the hardware interleaved mode, a signal on the pin PTB0 can be sampled by both ADC0 and ADC1. The interleaved mode is enabled by SIM_CHIPCTL[ADC_INTERLEAVE_EN] bits. For more information, see "ADC Hardware Interleaved Channels" in the ADC chapter of Reference Manual. 100 LQFP LQFP Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 — 10 VREFL/ VSS VREFL/ VSS VREFL/ VSS 1 — PTE16 DISABLED PTE16 FTM2_CH7 FXIO_D3 TRGMUX_ OUT7 2 — PTE15 DISABLED PTE15 FTM2_CH6 FXIO_D2 TRGMUX_ OUT6 3 1 PTD1 ADC2_SE1ADC2_SE1PTD1 FTM0_CH3LPSPI1_SINFTM2_CH1 FXIO_D1 TRGMUX_ OUT2 4 2 PTD0 ADC2_SE0ADC2_SE0PTD0 FTM0_CH2LPSPI1_SCKFTM2_CH0 FXIO_D0 TRGMUX_ OUT1 5 3 PTE11 ADC2_SE13ADC2_SE13PTE11 PWT_IN1 LPTMR0_ ALT1 FTM2_CH5 FXIO_D5 TRGMUX_ OUT5 6 4 PTE10 ADC2_SE12ADC2_SE12PTE10 CLKOUT FTM2_CH4 FXIO_D4 TRGMUX_ OUT4 7 — PTE13 DISABLED PTE13 FTM2_FLT0 8 5 PTE5 DISABLED PTE5 TCLK2 FTM2_QD_ PHA FTM2_CH3CAN0_TX FXIO_D7 EWM_IN 9 6 PTE4 DISABLED PTE4 BUSOUT FTM2_QD_ PHB FTM2_CH2CAN0_RX FXIO_D6 EWM_OUT_b Pinouts 26 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 10 7 VDD VDD VDD 11 8 VDDA VDDA VDDA 12 9 VREFH VREFH VREFH 13 — VREFL VREFL VREFL 14 — VSS VSS VSS 15 11 PTB7 EXTAL EXTAL PTB7 LPI2C0_SCL 16 12 PTB6 XTAL XTAL PTB6 LPI2C0_SDA 17 — PTE14 ACMP2_IN3ACMP2_IN3PTE14 FTM0_FLT1 FTM2_FLT1 18 13 PTE3 DISABLED PTE3 FTM0_FLT0LPUART2_ RTS FTM2_FLT0 TRGMUX_IN6ACMP2_OUT 19 — PTE12 DISABLED PTE12 FTM0_FLT3LPUART2_TX 20 — PTD17 DISABLED PTD17 FTM0_FLT2LPUART2_RX 21 14 PTD16 ACMP2_IN0ACMP2_IN0PTD16 FTM0_CH1 22 15 PTD15 ACMP2_IN1ACMP2_IN1PTD15 FTM0_CH0 23 16 PTE9 ACMP2_IN2/ DAC0_OUT ACMP2_IN2/ DAC0_OUT PTE9 FTM0_CH7LPUART2_ CTS 24 — PTD14 DISABLED PTD14 FTM2_CH5 CLKOUT 25 — PTD13 DISABLED PTD13 FTM2_CH4 RTC_CLKOUT 26 17 PTE8 ACMP0_IN3ACMP0_IN3PTE8 FTM0_CH6 27 18 PTB5 DISABLED PTB5 FTM0_CH5LPSPI0_PCS1 TRGMUX_IN0ACMP1_OUT 28 19 PTB4 ACMP1_IN2ACMP1_IN2PTB4 FTM0_CH4LPSPI0_SOUT TRGMUX_IN1 29 20 PTC3 ADC0_SE11/ ACMP0_IN4/ EXTAL32 ADC0_SE11/ ACMP0_IN4/ EXTAL32 PTC3 FTM0_CH3CAN0_TX 30 21 PTC2 ADC0_SE10/ ACMP0_IN5/ XTAL32 ADC0_SE10/ ACMP0_IN5/ XTAL32 PTC2 FTM0_CH2CAN0_RX 31 22 PTD7 DISABLED PTD7 LPUART2_TX FTM2_FLT3 32 23 PTD6 DISABLED PTD6 LPUART2_RX FTM2_FLT2 33 24 PTD5 DISABLED PTD5 FTM2_CH3LPTMR0_ ALT2 FTM2_FLT1PWT_IN2 TRGMUX_IN7 34 — PTD12 DISABLED PTD12 FTM2_CH2LPI2C1_HREQ LPUART2_ RTS 35 — PTD11 DISABLED PTD11 FTM2_CH1FTM2_QD_ PHA LPUART2_ CTS 36 — PTD10 DISABLED PTD10 FTM2_CH0FTM2_QD_ PHB 37 — VSS VSS VSS 38 — VDD VDD VDD 39 25 PTC1 ADC0_SE9/ ACMP1_IN3 ADC0_SE9/ ACMP1_IN3 PTC1 FTM0_CH1 FTM1_CH7 40 26 PTC0 ADC0_SE8/ ACMP1_IN4 ADC0_SE8/ ACMP1_IN4 PTC0 FTM0_CH0 FTM1_CH6 Pinouts Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 27 NXP Semiconductors

Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 41 — PTD9 ACMP1_IN5ACMP1_IN5PTD9 LPI2C1_SCL FTM2_FLT3 FTM1_CH5 42 — PTD8 DISABLED PTD8 LPI2C1_SDA FTM2_FLT2 FTM1_CH4 43 27 PTC17 ADC0_SE15ADC0_SE15PTC17 FTM1_FLT3 LPI2C1_SCLS 44 28 PTC16 ADC0_SE14ADC0_SE14PTC16 FTM1_FLT2 LPI2C1_SDAS 45 29 PTC15 ADC0_SE13/ ACMP2_IN4 ADC0_SE13/ ACMP2_IN4 PTC15 FTM1_CH3 46 30 PTC14 ADC0_SE12/ ACMP2_IN5 ADC0_SE12/ ACMP2_IN5 PTC14 FTM1_CH2 47 31 PTB3 ADC0_SE7ADC0_SE7PTB3 FTM1_CH1LPSPI0_SINFTM1_QD_ PHA TRGMUX_IN2 48 32 PTB2 ADC0_SE6ADC0_SE6PTB2 FTM1_CH0LPSPI0_SCKFTM1_QD_ PHB TRGMUX_IN3 49 — PTC13 DISABLED PTC13 FTM3_CH7FTM2_CH7 50 — PTC12 DISABLED PTC12 FTM3_CH6FTM2_CH6 51 — PTC11 DISABLED PTC11 FTM3_CH5 52 — PTC10 DISABLED PTC10 FTM3_CH4 53 33 PTB1 ADC0_SE5ADC0_SE5PTB1 LPUART0_TXLPSPI0_SOUTTCLK0 54 34 PTB0 ADC0_SE4ADC0_SE4PTB0 LPUART0_RXLPSPI0_PCS0LPTMR0_ ALT3 PWT_IN3 55 35 PTC9 ADC2_SE15ADC2_SE15PTC9 LPUART1_TXFTM1_FLT1 LPUART0_ RTS 56 36 PTC8 ADC2_SE14ADC2_SE14PTC8 LPUART1_RXFTM1_FLT0 LPUART0_ CTS 57 37 PTA7 ADC0_SE3/ ACMP1_IN1 ADC0_SE3/ ACMP1_IN1 PTA7 FTM0_FLT2 RTC_CLKIN LPUART1_ RTS 58 38 PTA6 ADC0_SE2/ ACMP1_IN0 ADC0_SE2/ ACMP1_IN0 PTA6 FTM0_FLT1LPSPI1_PCS1 LPUART1_ CTS 59 39 PTE7 ADC2_SE2/ ACMP2_IN6 ADC2_SE2/ ACMP2_IN6 PTE7 FTM0_CH7FTM3_FLT0 60 40 VSS VSS VSS 61 41 VDD VDD VDD 62 — PTA17 DISABLED PTA17 FTM0_CH6FTM3_FLT0EWM_OUT_b 63 — PTB17 ADC2_SE3ADC2_SE3PTB17 FTM0_CH5LPSPI1_PCS3 64 — PTB16 ADC1_SE15ADC1_SE15PTB16 FTM0_CH4LPSPI1_SOUT 65 — PTB15 ADC1_SE14ADC1_SE14PTB15 FTM0_CH3LPSPI1_SIN 66 — PTB14 ADC1_SE9ADC1_SE9PTB14 FTM0_CH2LPSPI1_SCK 67 42 PTB13 ADC1_SE8ADC1_SE8PTB13 FTM0_CH1FTM3_FLT1 68 43 PTB12 ADC1_SE7ADC1_SE7PTB12 FTM0_CH0FTM3_FLT2 69 44 PTD4 ADC1_SE6/ ACMP1_IN6 ADC1_SE6/ ACMP1_IN6 PTD4 FTM0_FLT3FTM3_FLT3 70 45 PTD3 NMI_b ADC1_SE3PTD3 FTM3_CH5LPSPI1_PCS0FXIO_D5 TRGMUX_IN4NMI_b 71 46 PTD2 ADC1_SE2ADC1_SE2PTD2 FTM3_CH4LPSPI1_SOUTFXIO_D4 TRGMUX_IN5 72 47 PTA3 ADC1_SE1ADC1_SE1PTA3 FTM3_CH1LPI2C0_SCLEWM_IN LPUART0_TX Pinouts 28 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 73 48 PTA2 ADC1_SE0ADC1_SE0PTA2 FTM3_CH0LPI2C0_SDAEWM_OUT_b LPUART0_RX 74 — PTB11 ADC2_SE8ADC2_SE8PTB11 FTM3_CH3LPI2C0_HREQ 75 — PTB10 ADC2_SE9ADC2_SE9PTB10 FTM3_CH2LPI2C0_SDAS 76 — PTB9 ADC2_SE10ADC2_SE10PTB9 FTM3_CH1LPI2C0_SCLS 77 — PTB8 ADC2_SE11ADC2_SE11PTB8 FTM3_CH0 78 49 PTA1 ADC0_SE1/ ACMP0_IN1 ADC0_SE1/ ACMP0_IN1 PTA1 FTM1_CH1LPI2C0_SDASFXIO_D3 FTM1_QD_ PHA LPUART0_ RTS TRGMUX_ OUT0 79 50 PTA0 ADC0_SE0/ ACMP0_IN0 ADC0_SE0/ ACMP0_IN0 PTA0 FTM2_CH1LPI2C0_SCLSFXIO_D2 FTM2_QD_ PHA LPUART0_ CTS TRGMUX_ OUT3 80 51 PTC7 ADC1_SE5ADC1_SE5PTC7 LPUART1_TXCAN1_TX FTM3_CH3 81 52 PTC6 ADC1_SE4ADC1_SE4PTC6 LPUART1_RXCAN1_RX FTM3_CH2 82 — PTA16 ADC1_SE13ADC1_SE13PTA16 FTM1_CH3LPSPI1_PCS2 83 — PTA15 ADC1_SE12ADC1_SE12PTA15 FTM1_CH2LPSPI0_PCS3 84 53 PTE6 ADC1_SE11/ ACMP0_IN6 ADC1_SE11/ ACMP0_IN6 PTE6 LPSPI0_PCS2 FTM3_CH7 LPUART1_ RTS 85 54 PTE2 ADC1_SE10ADC1_SE10PTE2 LPSPI0_SOUTLPTMR0_ ALT3 FTM3_CH6PWT_IN3 LPUART1_ CTS 86 — VSS VSS VSS 87 — VDD VDD VDD 88 — PTA14 DISABLED PTA14 FTM0_FLT0FTM3_FLT1EWM_IN FTM1_FLT0BUSOUT 89 55 PTA13 ADC2_SE4ADC2_SE4PTA13 FTM1_CH7CAN1_TX LPI2C1_SCLS 90 56 PTA12 ADC2_SE5ADC2_SE5PTA12 FTM1_CH6CAN1_RX LPI2C1_SDAS 91 57 PTA11 DISABLED PTA11 FTM1_CH5LPUART0_RXFXIO_D1 92 58 PTA10 JTAG_TDO/ noetm_Trace_ SWO PTA10 FTM1_CH4LPUART0_TXFXIO_D0 JTAG_TDO/ noetm_Trace_ SWO 93 59 PTE1 ADC2_SE6ADC2_SE6PTE1 LPSPI0_SINLPI2C0_HREQLPI2C1_SCL FTM1_FLT1 94 60 PTE0 ADC2_SE7ADC2_SE7PTE0 LPSPI0_SCKTCLK1 LPI2C1_SDA FTM1_FLT2 95 61 PTC5 JTAG_TDI PTC5 FTM2_CH0RTC_CLKOUTLPI2C1_HREQ FTM2_QD_ PHB JTAG_TDI 96 62 PTC4 JTAG_TCLK/ SWD_CLK ACMP0_IN2PTC4 FTM1_CH0RTC_CLKOUT EWM_IN FTM1_QD_ PHB JTAG_TCLK/ SWD_CLK 97 63 PTA5 RESET_b PTA5 TCLK1 JTAG_TRST_bRESET_b 98 64 PTA4 JTAG_TMS/ SWD_DIO PTA4 ACMP0_OUTEWM_OUT_b JTAG_TMS/ SWD_DIO 99 — PTA9 DISABLED PTA9 FXIO_D7 FTM3_FLT2FTM1_FLT3 100 — PTA8 DISABLED PTA8 FXIO_D6 FTM3_FLT3 Pinouts Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 29 NXP Semiconductors

4.2 Port control and interrupt summary

Table 6. Ports summary

4.3 Module Signal Description Tables

the module's chapter. They also briefly describe the signal function and direction.

4.3.1 Core Modules

Table 7. JTAG Signal Descriptions Table 8. SWD Signal Descriptions Table 9. TPIU Signal Descriptions

4.3.2 System Modules

Table 10. System Signal Descriptions

Table 11. EWM Signal Descriptions of EWM_IN is programmable using the EWM_CTRL[ASSIN] bit. The default polarity is active-low.

4.3.3 Clock Modules

Table 12. OSC (in SCG) Signal Descriptions Table 13. RTC Oscillator (OSC32) Signal Descriptions

4.3.4 Analog

Table 14. ADC n Signal Descriptions Table 15. DAC0 Signal Descriptions

Table 16. ACMP n Signal Descriptions

4.3.5 Timer Modules

Table 17. LPTMR0 Signal Descriptions Table 18. RTC Signal Descriptions Table 19. FTM n Signal Descriptions

4.3.6 Communication Interfaces

Table 20. CAN n Signal Descriptions

Table 21. LPSPI n Signal Descriptions Table 22. LPI2C n Signal Descriptions Table 23. LPUART n Signal Descriptions Table 24. FlexIO Signal Descriptions

4.3.7 Human-Machine Interfaces (HMI)

Table 25. GPIO Signal Descriptions

4.4 Pinout diagram

signals can be used on which pin, see the previous table of Pin Assignments.

98 PTA4

97 PTA5

96 PTC4

95 PTC5

94 PTE0

93 PTE1

92 PTA10

91 PTA11

90 PTA12

89 PTA13

88 PTA14

80 PTC7

83 PTA15

84 PTE6

85 PTE2

86 VSS

87 VDD

100 PTA8

Figure 7. 100 LQFP Pinout Diagram

Figure 8. 64 LQFP Pinout Diagram

4.5 Package dimensions

Figure 9. 100-pin LQFP package dimensions 1

Figure 10. 100-pin LQFP package dimensions 2

Figure 11. 64-pin LQFP package dimensions 1

Figure 12. 64-pin LQFP package dimensions 2

5 Electrical characteristics

5.1 Terminology and guidelines

5.1.1 Definitions

Key terms are defined in the following table: Term Definition Rating A minimum or maximum value of a technical characteristic that, if exceeded, may cause permanent chip failure:

  • Operating ratings apply during operation of the chip.
  • Handling ratings apply when the chip is not powered. NOTE: The likelihood of permanent chip failure increases rapidly as soon as a characteristic begins to exceed one of its operating ratings. Operating requirement A specified value or range of values for a technical characteristic that you must guarantee during operation to avoid incorrect operation and possibly decreasing the useful life of the chip Operating behavior A specified value or range of values for a technical characteristic that are guaranteed during operation if you meet the operating requirements and any other specified conditions Typical value A specified value for a technical characteristic that:
  • Lies within the range of values specified by the operating behavior
  • Is representative of that characteristic during operation when you meet the typical-value conditions or other specified conditions NOTE: Typical values are provided as design guidelines and are neither tested nor guaranteed.

Electrical characteristics

42 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.1.2 Examples

Operating rating: Operating requirement: Operating behavior that includes a typical value: EXAMPLE EXAMPLEEXAMPLE EXAMPLE

5.1.3 Typical-value conditions

Typical values assume you meet the following conditions (or other conditions as specified): Symbol Description Value Unit TA Ambient temperature 25 °C VDD Supply voltage 5.0 V Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 43 NXP Semiconductors

5.1.4 Relationship between ratings and operating requirements

  • No permanent failure - Correct operation Normal operating rangeFatal range Expected permanent failure Fatal range Expected permanent failure Operating rating (max.)Operating requirement (max.)Operating requirement (min.)Operating rating (min.) Operating (power on) Degraded operating range Degraded operating range No permanent failure Handling rangeFatal range Expected permanent failure Fatal range Expected permanent failure Handling rating (max.)Handling rating (min.) Handling (power off) - No permanent failure - Possible decreased life - Possible incorrect operation - No permanent failure - Possible decreased life - Possible incorrect operation

5.1.5 Guidelines for ratings and operating requirements

Follow these guidelines for ratings and operating requirements:

  • Never exceed any of the chip’s ratings.
  • During normal operation, don’t exceed any of the chip’s operating requirements.
  • If you must exceed an operating requirement at times other than during normal operation (for example, during power sequencing), limit the duration as much as possible.

5.2 Ratings

5.2.1 Thermal handling ratings

Symbol Description Min. Max. Unit Notes TSTG Storage temperature –55 150 °C 1 TSDR Solder temperature, lead-free — 260 °C 2 1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life. 2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. 44 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.2.2 Moisture handling ratings

Symbol Description Min. Max. Unit Notes MSL Moisture sensitivity level — 3 — 1 1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices.

5.2.3 ESD handling ratings

Symbol Description Min. Max. Unit Notes VHBM Electrostatic discharge voltage, human body model − 6000 6000 V 1 VCDM Electrostatic discharge voltage, charged-device model All pins except the corner pins − 500 500 V Corner pins only − 750 750 V ILAT Latch-up current at ambient temperature upper limit − 100 100 mA 3 1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM). 2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components. 3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.

5.2.4 Voltage and current operating ratings

Functional operating conditions appear in the "DC electrical specifications". Absolute maximum ratings are stress ratings only, and functional operation at the maximum values is not guaranteed. Stress beyond the listed maximum values may affect device reliability or cause permanent damage to the device. Table 26. Voltage and current operating ratings Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 45 NXP Semiconductors

Table 26. Voltage and current operating ratings (continued)

  1. 60s lifetime - No restrictions, i.e. the part can switch.

10 hours lifetime - Device in reset, i.e. the part cannot switch.

5.3 General

5.3.1 Nonswitching electrical specifications

5.3.1.1 Voltage and current operating requirements

Table 27. Voltage and current operating requirements

  1. All pins are internally clamped to VSS and VDD through ESD protection diodes. If VIN is less than VSS – 0.3V or greater

R=(VSS – 0.3V–VIN)/|IICIO|. The positive injection current limiting resistor is calculated as R=[VIN–(VDD + 0.3V)]/|IICIO|. The actual resistor values should be an order of magnitude higher to tolerate transient voltages.

  1. Open drain outputs must be pulled to VDD.

46 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 28. DC electrical specifications Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 47 NXP Semiconductors

Table 28. DC electrical specifications (continued)

  1. Max power supply ramp rate is 500 V/ms.
  2. The value given is measured at high drive strength mode. For value at low drive strength mode see the Ioh_5 value
  3. The 20 mA I/O pin is capable of switching a 50 pF load at up to 40 MHz.
  4. The value given is measured at high drive strength mode. For value at low drive strength mode see the Iol_5 value given
  5. Refers to the current that leaks into the core when the pad is in Hi-Z (Off state).
  6. Maximum pin leakage current at the ambient temperature upper limit.
  7. PTD0, PTD1, PTD15, PTD16, PTB4, PTB5, PTE0 and PTE1 I/O have both high drive and normal drive capability

selected by the associated Portx_PCRn[DSE] control bit. All other GPIOs are normal drive only.

  1. Refers to the pin leakage on the GPIOs when they are OFF.
  2. Measured at VDD supply voltage = VDD min and input V = VSS
  3. Measured at VDD supply voltage = VDD min and input V = VDD

48 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.3.1.3 Voltage regulator electrical characteristics

100 LQFP

64 LQFP

Figure 13. Pinout decoupling Table 29. Voltage regulator electrical characteristics

  1. For improved ADC performance it is recommended to use 1 nF X7R/C0G and 10 nF X7R ceramics in parallel.
  2. The capacitors should be placed as close as possible to the VREFH/VREFL pins or corresponding VDD/VSS pins.
  3. The requirement and value of of CDEC will be decided by the device application requirement.

be added, and the minimum value is 100 nF.

5.3.1.4 LVR, LVD and POR operating requirements

Table 30. V DD supply LVR, LVD and POR operating requirements Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 49 NXP Semiconductors

Table 30. V DD supply LVR, LVD and POR operating requirements (continued)

  1. Rising threshold is the sum of falling threshold and hysteresis voltage.

5.3.1.5 Power mode transition operating behaviors

Table 31. Power mode transition operating behaviors

  1. Typical value is the average of values tested at Temperature=25 ℃ and VDD=3.3 V.
  2. Max value is mean+6×sigma of tested values at the worst case of ambient temperature range and VDD 2.7 V to 5.5 V.
  3. After a POR event, the amount of time from the point VDD reaches the reference voltage 2.7 V to execution of the first

instruction, across the operating temperature range of the chip.

5.3.1.6 Power consumption

50 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

The maximum values stated in the following table represent characterized results equivalent to the mean plus three times the standard deviation (mean + 3 sigma). Table 32. Power consumption operating behaviors Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 51 NXP Semiconductors

Table 32. Power consumption operating behaviors (continued) Flash in Compute Operation mode. Flash all peripheral clock disabled. Flash all peripheral clock enabled. Flash all peripheral clock disabled. Flash all peripheral clock enabled. Flash all peripheral clock disabled. Table continues on the next page... 52 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Flash all peripheral clock enabled. Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 53 NXP Semiconductors

  1. These values are based on characterization but not covered by test limits in production. 2. PMC_REGSC[CLKBIASDIS] is the control bit to enable or disable bias under STOP/VLPS mode. NOTE CoreMark benchmark compiled using IAR 7.40 with optimization level high, optimized for balanced.

5.3.1.6.1 Low power mode peripheral current adder — typical value

Symbol Description Typical ILPTMR LPTMR peripheral adder measured by placing the device in VLPS mode with LPTMR enabled using LPO. Includes LPO power consumption. 366 nA ICMP CMP peripheral adder measured by placing the device in VLPS mode with CMP enabled using the 8-bit DAC and a single external input for compare. 8-bit DAC enabled with half VDDA voltage, low speed mode. Includes 8-bit DAC power consumption. 16 μA IRTC RTC peripheral adder measured by placing the device in VLPS mode with external 32 kHz crystal enabled by means of the RTC_CR[OSCE] bit and the RTC counter enabled. Includes EXTAL32 (32 kHz external crystal) power consumption. 312 nA ILPUART LPUART peripheral adder measured by placing the device in VLPS mode with selected clock source waiting for RX data at 115200 baud rate. Includes selected clock source power consumption. (SIRC 8 MHz) 79 μA IFTM FTM peripheral adder measured by placing the device in VLPW mode with selected clock source, outputting the edge aligned PWM of 100 Hz frequency. 45 μA IADC ADC peripheral adder combining the measured values at VDD and VDDA by placing the device in VLPS mode. ADC is configured for low power mode using SIRC clock source, 8-bit resolution and continuous conversions. 484 μA ILPI2C LPI2C peripheral adder measured by placing the device in VLPS mode with selected clock source sending START and Slave address, waiting for RX data. Includes the DMA power consumption. 179 μA ILPIT LPIT peripheral adder measured by placing the device in VLPS mode with internal SIRC 8 MHz enabled in Stop mode. Includes selected clock source power consumption. 18 μA ILPSPI LPSPI peripheral adder measured by placing the device in VLPS mode with selected clock source, output data on SOUT pin with SCK 500 kbit/s. Includes the DMA power consumption. 565 μA

5.3.1.6.2 Diagram: Typical IDD_RUN operating behavior

The following data was measured under these conditions:

  • SCG in SOSC for both Run and VLPR modes
  • No GPIOs toggled

54 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

  • Code execution from flash with cache enabled
  • For the ALLOFF curve, all peripheral clocks are disabled except FTFE 000.00E +00 10.00E -03 20.00E -03 30.00E -03 40.00E -03 50.00E -03 60.00E -03 70.00E -03 3 4 6 12 24 48 120 168 C urrent C onsumption (A) R un C urrent vs C ore F requency ALLOF F ALLON C lock G ates Temperature = 25, VDD=5V C ore-Bus-F lash C ore F req

Figure 14. Run mode supply current vs. core frequency Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 55 NXP Semiconductors

000.00E +00 500.00E -06 1.00E -03 1.50E -03 2.00E -03 2.50E -03 1 2 4 C urrent C onsumption (A) VL P R C urrent vs C ore F requency ALLOF F ALLON C lock G ates Temperature = 25, VDD=5V C ore-Bus-F lash C ore F req Figure 15. VLPR mode supply current vs. core frequency

5.3.1.7 EMC performance

and guidance specifically targeted at optimizing EMC performance.

  • AN2321: Designing for Board Level Electromagnetic Compatibility
  • AN1050: Designing for Electromagnetic Compatibility (EMC) with HCMOS Microcontrollers
  • AN1263: Designing for Electromagnetic Compatibility with Single-Chip Microcontrollers

56 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

  • AN2764: Improving the Transient Immunity Performance of Microcontroller- Based Applications
  • AN1259: System Design and Layout Techniques for Noise Reduction in MCU- Based Systems

5.3.1.7.1 EMC radiated emissions operating behaviors

EMC measurements to IC-level IEC standards are available from NXP on request.

5.3.1.7.2 Designing with radiated emissions in mind

To find application notes that provide guidance on designing your system to minimize interference from radiated emissions. 1. Go to http://www.nxp.com. 2. Perform a keyword search for “EMC design”. 3. Select the "Documents" category and find the application notes.

5.3.1.8 Capacitance attributes

Table 33. Capacitance attributes

5.3.2 Switching specifications

5.3.2.1 Device clock specifications

Table 34. Device clock specifications Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 57 NXP Semiconductors

Table 34. Device clock specifications (continued)

  1. The frequency limitations in VLPR / VLPW mode here override any frequency specification listed in the timing

specification for any other module.

5.3.2.2 AC electrical characteristics

Figure 16. Input signal measurement reference output pins have the following characteristics.

  • C L=30 pF loads
  • Normal drive strength

58 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.3.2.3 General AC specifications

These general purpose specifications apply to all signals configured for GPIO, UART, and timers. Table 35. General switching specifications

  1. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses
  2. The greater of synchronous and asynchronous timing must be met.
  3. These pins have a passive filter enabled on the inputs. This is the shortest pulse width that is guaranteed to be
  4. These pins do not have a passive filter on the inputs. This is the shortest pulse width that is guaranteed to be

Table 36. Functional pad AC specifications

  1. Max power supply ramp rate is 500 V/ms.
  2. Propagation delay measured from 50% of core side input to 50% of the output.
  3. Edges measured using 20% and 80% of the VDD supply.

Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 59 NXP Semiconductors

5.3.2.5 AC specifications at 5 V range

Table 37. Functional pad AC specifications

  1. Max power supply ramp rate is 500 V/ms.
  2. As measured from 50% of core side input to 50% of the output.
  3. Edges measured using 20% and 80% of the VDD supply.

5.3.3 Thermal specifications

5.3.3.1 Thermal operating requirements

Table 38. Thermal operating requirements

  1. Maximum TA can be exceeded only if the user ensures that TJ does not exceed maximum TJ. The simplest method to

determine TJ is: TJ = TA + RΘJA × chip power dissipation.

5.3.3.2 Thermal attributes

60 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.3.3.2.1 Description

The tables in the following sections describe the thermal characteristics of the device. NOTE Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting side (board) temperature, ambient temperature, air flow, power dissipation or other components on the board, and board thermal resistance.

5.3.3.2.2 Thermal characteristics for the 64-pin LQFP package

Table 39. Thermal characteristics for the 64-pin LQFP package

  1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
  2. Per JEDEC JESD51-2 with natural convection for horizontally oriented board. Board meets JESD51-9 specification for

1s or 2s2p board, respectively.

  1. Per JEDEC JESD51-6 with forced convection for horizontally oriented board. Board meets JESD51-9 specification for

1s or 2s2p board, respectively.

  1. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is

measured on the top surface of the board near the package.

  1. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
  2. Thermal characterization parameter indicating the temperature difference between package top and the junction

temperature per JEDEC JESD51-2.

5.3.3.2.3 Thermal characteristics for the 100-pin LQFP package

Table 40. Thermal characteristics for the 100-pin LQFP package Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 61 NXP Semiconductors

Table 40. Thermal characteristics for the 100-pin LQFP package (continued)

  1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
  2. Per JEDEC JESD51-2 with natural convection for horizontally oriented board. Board meets JESD51-9 specification for

1s or 2s2p board, respectively.

  1. Per JEDEC JESD51-6 with forced convection for horizontally oriented board. Board meets JESD51-9 specification for 1s

or 2s2p board, respectively.

  1. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured

on the top surface of the board near the package.

  1. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
  2. Thermal characterization parameter indicating the temperature difference between package top and the junction

temperature per JEDEC JESD51-2.

5.3.3.2.4 General notes for specifications at maximum junction temperature

  • T A = ambient temperature for the package (°C)
  • R θJA = junction to ambient thermal resistance (°C/W)
  • P D = power dissipation in the package (W) The junction to ambient thermal resistance is an industry standard value that provides a quick and easy estimation of thermal performance. Unfortunately, there are two values in common usage: the value determined on a single layer board and the value obtained on a board with two planes. For packages such as the PBGA, these values can be different by a factor of two. Which value is closer to the application depends on the power dissipated by other components on the board. The value obtained on a single layer board is appropriate for the tightly packed printed circuit board. The value obtained on the board with the internal planes is usually appropriate if the board has low power dissipation and the components are well separated.

62 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

When a heat sink is used, the thermal resistance is expressed in the following equation as the sum of a junction-to-case thermal resistance and a case-to-ambient thermal resistance: RθJA = RθJC + RθCA where:

  • R θJA = junction to ambient thermal resistance (°C/W)
  • R θJC = junction to case thermal resistance (°C/W)
  • R θCA = case to ambient thermal resistance (°C/W) RθJC is device related and cannot be influenced by the user. The user controls the thermal environment to change the case to ambient thermal resistance, RθCA. For instance, the user can change the size of the heat sink, the air flow around the device, the interface material, the mounting arrangement on printed circuit board, or change the thermal dissipation on the printed circuit board surrounding the device. To determine the junction temperature of the device in the application when heat sinks are not used, the Thermal Characterization Parameter (ΨJT) can be used to determine the junction temperature with a measurement of the temperature at the top center of the package case using this equation: TJ = TT + (ΨJT × PD) where:
  • T T = thermocouple temperature on top of the package (°C)
  • ΨJT = thermal characterization parameter (°C/W)
  • P D = power dissipation in the package (W) The thermal characterization parameter is measured per JESD51-2 specification using a 40 gauge type T thermocouple epoxied to the top center of the package case. The thermocouple should be positioned so that the thermocouple junction rests on the package. A small amount of epoxy is placed over the thermocouple junction and over about 1 mm of wire extending from the junction. The thermocouple wire is placed flat against the package case to avoid measurement errors caused by cooling effects of the thermocouple wire.

5.4 Peripheral operating requirements and behaviors

Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 63 NXP Semiconductors

5.4.1 System modules

There are no specifications necessary for the device's system modules.

5.4.2 Clock interface modules

5.4.2.1 Oscillator electrical specifications

5.4.2.1.1 External Oscillator electrical specifications

64 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

(EXTAL32 WAVE) mux ref_clk Differential input comparator (VLP mode) Peak detector LP mode Driver (VLP mode) Pull down resistor (OFF) ESD PAD 300 ohms ESD PAD 300 ohms EXTAL32 pin XTAL32 pin Series resistor for current limitation Crystal or resonatorC1 C2 Figure 17. Oscillator connections scheme (OSC32) Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 65 NXP Semiconductors

(EXTAL WAVE) mux ref_clk Differential input comparator (HG/LP mode) Peak detector LP mode Driver (HG/LP mode) Pull down resistor (OFF) ESD PAD 300 ohms ESD PAD 40 ohms EXTAL pin XTAL pin Series resistor for current limitation Crystal or resonatorC1 C2 1M ohms Feedback Resistor1 NOTE: 1. 1M Feedback resistor is needed only for HG mode. Figure 18. Oscillator connections scheme (OSC) specifications" tables are from simulation. Table 41. External Oscillator electrical specifications (OSC32) Table continues on the next page... 66 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 41. External Oscillator electrical specifications (OSC32) (continued)

  1. Measured at VDD = 5 V, Temperature = 25 °C. The current consumption is according to the crystal or resonator,
  2. C1 and C2 must be provided by external capacitors and their load capacitance depends on the crystal or resonator

the parasitic capacitance of package and board.

  1. The EXTAL32 and XTAL32 pins should only be connected to required oscillator components and must not be

connected to any other devices. Table 42. External Oscillator electrical specifications (OSC)

4 MHz — 200 — µA

8 MHz — 300 — µA

32 MHz — 2 — mA

4 MHz — 1 — mA

24 MHz — 5 — mA

40 MHz — 6 — mA

Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 67 NXP Semiconductors

Table 42. External Oscillator electrical specifications (OSC) (continued)

  1. Measured at VDD = 5 V, Temperature = 25 °C. The current consumption is according to the crystal or resonator, loading
  2. C1 and C2 must be provided by external capacitors and their load capacitance depends on the crystal or resonator

the parasitic capacitance of package and board.

  1. When low power mode is selected, RF is integrated and must not be attached externally.
  2. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to

5.4.2.1.2 External Oscillator frequency specifications

Table 43. External Oscillator frequency specifications (OSC32) Table continues on the next page... 68 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 43. External Oscillator frequency specifications (OSC32) (continued)

  1. The start-up measured after 4096 cycles. Proper PC board layout procedures must be followed to achieve

Table 44. External Oscillator frequency specifications (OSC)

  1. The start-up measured after 4096 cycles. Proper PC board layout procedures must be followed to achieve

5.4.2.2 System Clock Generation (SCG) specifications

5.4.2.2.1 Fast internal RC Oscillator (FIRC) electrical specifications

Table 45. Fast internal RC Oscillator electrical specifications Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 69 NXP Semiconductors

Table 45. Fast internal RC Oscillator electrical specifications (continued)

  1. The limit is respected across process, voltage and full temperature range.
  2. Startup time is defined as the time between clock enablement and clock availability for system use.

5.4.2.2.2 Slow internal RC oscillator (SIRC) electrical specifications

Table 46. Slow internal RC oscillator (SIRC) electrical specifications

  1. The limit is respected across process, voltage and full temperature range.
  2. Startup time is defined as the time between clock enablement and clock availability for system use.

5.4.2.2.3 Low Power Oscillator (LPO) electrical specifications

Table 47. Low Power Oscillator (LPO) electrical specifications 70 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.4.2.2.4 PLL electrical specifications

Table 48. PLL electrical specifications

  1. Excludes any oscillator currents that are also consuming power while PLL is in operation.
  2. This specification was obtained using a NXP developed PCB. PLL jitter is dependent on the noise characteristics of
  3. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL

thisspecification assumes it is already running.

5.4.3 Memories and memory interfaces

5.4.3.1 Flash memory module (FTFE) electrical specifications

5.4.3.1.1 Flash timing specifications — program and erase

are active and do not include command overhead. Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 71 NXP Semiconductors

Table 49. NVM program/erase timing specifications

  1. Maximum time based on expectations at cycling end-of-life.

5.4.3.1.2 Flash timing specifications — commands

Table 50. Flash command timing specifications

  • 64 KB data flash
  • 512 KB program flash 0.5 1.8 ms ms trd1sec2k Read 1s Section execution time (2 KB flash) — — 75 μs 1 trd1sec4k Read 1s Section execution time (4 KB flash) — — 100 μs 1 tpgmchk Program Check execution time — — 95 μs 1 trdrsrc Read Resource execution time — — 40 μs 1 tpgm8 Program Phrase execution time — 90 150 μs tersblk64k tersblk512k Erase Flash Block execution time
  • 64 KB data flash
  • 512 KB program flash 435 475 3700 ms ms tersscr Erase Flash Sector execution time — 15 115 ms 2 tpgmsec1k Program Section execution time (1 KB flash) — 5 — ms trd1all Read 1s All Blocks execution time — — 2.2 ms trdonce Read Once execution time — — 30 μs 1 tpgmonce Program Once execution time — 90 — μs tersall Erase All Blocks execution time — 500 4200 ms 2 tvfykey Verify Backdoor Access Key execution time — — 30 μs 1 tersallu Erase All Blocks Unsecure execution time — 500 4200 ms 2 tpgmpart32k tpgmpart64k Program Partition for EEPROM execution time
  • 32 KB EEPROM backup
  • 64 KB EEPROM backup ms ms tsetramff tsetram32k tsetram48k Set FlexRAM Function execution time:
  • Control Code 0xFF
  • 32 KB EEPROM backup 0.8 1.0 1.2 1.5 μs ms ms Table continues on the next page...

72 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 50. Flash command timing specifications (continued)

  • 64 KB EEPROM backup — 1.3 1.9 ms teewr8b32k teewr8b48k teewr8b64k Byte-write to FlexRAM execution time:
  • 32 KB EEPROM backup
  • 48 KB EEPROM backup
  • 64 KB EEPROM backup 385 430 475 1700 1850 2000 μs μs μs teewr16b32k teewr16b48k teewr16b64k 16-bit write to FlexRAM execution time:
  • 32 KB EEPROM backup
  • 48 KB EEPROM backup
  • 64 KB EEPROM backup 385 430 475 1700 1850 2000 μs μs μs teewr32bers 32-bit write to erased FlexRAM location execution time — 360 1500 μs teewr32b32k teewr32b48k teewr32b64k 32-bit write to FlexRAM execution time:
  • 32 KB EEPROM backup
  • 48 KB EEPROM backup
  • 64 KB EEPROM backup 630 720 810 2000 2125 2250 μs μs μs 1. Assumes 25MHz or greater flash clock frequency. 2. Maximum times for erase parameters based on expectations at cycling end-of-life.

5.4.3.1.3 Flash high voltage current behaviors

Table 51. Flash high voltage current behaviors

5.4.3.1.4 Reliability specifications

Table 52. NVM reliability specifications Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 73 NXP Semiconductors

Table 52. NVM reliability specifications (continued)

  • EEPROM backup to FlexRAM ratio = 16
  • EEPROM backup to FlexRAM ratio = 128
  • EEPROM backup to FlexRAM ratio = 512
  • EEPROM backup to FlexRAM ratio = 2,048 140 K 1.26 M 5 M 20 M 400 K 3.2 M 12.8 M 50 M writes writes writes writes 1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering Bulletin EB619. 2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C. 3. Write endurance represents the number of writes to each FlexRAM location at -40 °C ≤Tj ≤ 125 °C influenced by the cycling endurance of the FlexNVM and the allocated EEPROM backup. Minimum and typical values assume all 16-bit or 32-bit writes to FlexRAM; all 8-bit writes result in 50% less endurance.

5.4.4 Security and integrity modules

There are no specifications necessary for the device's security and integrity modules.

5.4.5 Analog

5.4.5.1 ADC electrical specifications

Table 53. 12-bit ADC operating conditions Table continues on the next page... 74 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 53. 12-bit ADC operating conditions (continued)

  1. Typical values assume VDDA = 5 V, Temp = 25 °C, fADCK = 40 MHz, unless otherwise stated. Typical values are for

reference only, and are not tested in production.

  1. For packages without dedicated VREFH and VREFL pins, VREFH is internally tied to VDDA, and VREFL is internally tied to
  2. Clock and compare cycle need to be set according the guidelines in the block guide.
  3. ADC conversion will become less reliable above maximum frequency.
  4. When using ADC hardware averaging, refer to the device Reference Manual to determine the most appropriate
  5. Max ADC conversion rate of 1200 Ksps is with 10-bit mode

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Figure 19. ADC input impedance equivalency diagram clock as the clocking source for ADC. some degradation in the ADC performance may be observed. Table 54. 12-bit ADC characteristics (V REFH = VDDA, VREFL = VSSA) Table continues on the next page... 76 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 54. 12-bit ADC characteristics (V REFH = VDDA, VREFL = VSSA) (continued)

  1. All accuracy numbers assume the ADC is calibrated with VREFH = VDDA
  2. Typical values assume VDDA = 5.0 V, Temp = 25 °C, fADCK = 48 MHz unless otherwise stated.
  3. These values are based on characterization but not covered by test limits in production.
  4. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low

1 MHz ADC conversion clock speed.

  1. 1 LSB = (VREFH - VREFL)/2N
  2. ADC conversion clock < 16 MHz, Max hardware averaging (AVGE = %1, AVGS = %11)
  3. Input data is 100 Hz sine wave. ADC conversion clock < 40 MHz.
  4. ADC conversion clock < 3 MHz
  5. The sensor must be calibrated to gain good accuracy, so as to provide good linearity, see also AN3031 for more

detailed application information of the temperature sensor. Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 77 NXP Semiconductors

5.4.5.2 CMP with 8-bit DAC electrical specifications

Table 55. Comparator with 8-bit DAC electrical specifications Table continues on the next page... 78 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 55. Comparator with 8-bit DAC electrical specifications (continued)

  1. Typical values assumed at VDDA = 5.0 V, Temp = 25 ℃, unless otherwise stated.
  2. Difference at input > 200mV
  3. Applied ± (100 mV + Hyst) around switch point
  4. Applied ± (30 mV + 2 × Hyst) around switch point

Figure 20. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 0) Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 79 NXP Semiconductors

Figure 23. Typical hysteresis vs. Vin level (VDD = 5 V, PMODE = 1) Table 56. 12-bit DAC operating requirements

  1. The DAC reference can be selected to be VDDA or VREFH.
  2. A small load capacitance can improve the bandwidth performance of the DAC.
  3. Output range is from ground + 0.2 to VDACR - 0.2

Table 57. 12-bit DAC operating behaviors Table continues on the next page... Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 81 NXP Semiconductors

Table 57. 12-bit DAC operating behaviors (continued)

  • High power (SP HP)
  • Low power (SP LP) 0.05 1.5 0.12 V/μs 1. Settling within ±1 LSB 2. The INL is measured for 0 + 100 mV to VDACR −100 mV 3. The DNL is measured for 0 + 100 mV to VDACR −100 mV with VDDA > 2.4 V 4. Calculated by a best fit curve from VSS + 100 mV to VDACR − 100 mV 5. DAC reference to VREFH (DACREF_1) 6. VDDA = 3.0 V, reference select set for VDDA (DACx_CO:DACRFS = 1), high power mode (DACx_C0:LPEN = 0), DAC set to 0x800, temperature range is across the full range of the device

5.4.6 Communication interfaces

5.4.6.1 LPUART electrical specifications

Refer to General AC specifications for LPUART specifications. 82 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.4.6.2 LPSPI electrical specifications

The Low Power Serial Peripheral Interface (LPSPI) provides a synchronous serial bus with master and slave operations. Many of the transfer attributes are programmable. The following tables provide timing characteristics for classic LPSPI timing modes. All timing is shown with respect to 20% VDD and 80% VDD thresholds, unless noted, as well as input signal transitions of 3 ns and a 30 pF maximum load on all LPSPI pins. Table 58. LPSPI master mode timing

  1. fperiph is LPSPI peripheral functional clock. On this device, the max value of fSPSCK should not exceed 25 MHz.

High drive pin should be used for fast bit rate. Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 83 NXP Semiconductors

Table 59. LPSPI slave mode timing (continued)

  1. fperiph is LPSPI peripheral functional clock. On this device, the max value of fSPSCK should not exceed 25 MHz.
  2. Time to data active from high-impedance state
  3. Hold time to high-impedance state

Figure 26. LPSPI slave mode timing (CPHA = 0) Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 85 NXP Semiconductors

BIT 6 . . . 1 MSB OUT SLAVE LSB OUT 12 13 3 12 13 SLAVE see note (INPUT) (CPOL=0) SPSCK SPSCK (CPOL=1) SS (INPUT) (INPUT) MOSI (INPUT) MISO (OUTPUT) LSB INBIT 6 . . . 1 Figure 27. LPSPI slave mode timing (CPHA = 1)

5.4.6.3 LPI2C

Table 60. LPI 2C specifications

  1. Hs-mode is only supported in slave mode.
  2. The maximum SCL clock frequency in Fast mode with maximum bus loading (400pF) can only be achieved with

information on the required pull-up devices, see I2C Bus Specification.

  1. See the section "General switching specifications".

5.4.7 Debug modules

86 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

5.4.7.1 SWD electricals

Table 61. SWD full voltage range electricals Figure 28. Serial wire clock input timing Figure 29. Serial wire data timing Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 87 NXP Semiconductors

5.4.7.2 JTAG electricals

Table 62. JTAG limited voltage range electricals Table 63. JTAG full voltage range electricals Table continues on the next page... 88 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Figure 32. Test Access Port timing Figure 33. TRST timing

6 Design considerations

6.1 Hardware design considerations

voltages higher than maximum-rated voltages to this high-impedance circuit.

6.1.1 Printed circuit board recommendations

  • Place connectors or cables on one edge of the board and do not place digital circuits between connectors.
  • Drivers and filters for I/O functions must be placed as close to the connectors as possible. Connect TVS devices at the connector to a good ground. Connect filter capacitors at the connector to a good ground. Consider to add ferrite bead or inductor to some sensitive lines.
  • Physically isolate analog circuits from digital circuits if possible.
  • Place input filter capacitors as close to the MCU as possible.
  • For best EMC performance, route signals as transmission lines; use a ground plane directly under LQFP packages; and solder the exposed pad (EP) to ground directly under QFN packages.

6.1.2 Power delivery system

Consider the following items in the power delivery system:

  • Use a plane for ground.
  • Use a plane for MCU VDD supply if possible.
  • Always route ground first, as a plane or continuous surface, and never as sequential segments.
  • Always route the power net as star topology, and make each power trace loop as minimum as possible.
  • Route power next, as a plane or traces that are parallel to ground traces.
  • Place bulk capacitance, 10 μF or more, at the entrance of the power plane.
  • Place bypass capacitors for MCU power domain as close as possible to each VDD/VSS pair, including VDDA/VSSA and VREFH/VREFL.
  • The minimum bypass requirement is to place 0.1 μF capacitors positioned as near as possible to the package supply pins.

6.1.3 Analog design

Each ADC input must have an RC filter as shown in the following figure. The maximum value of R must be RAS max if fast sampling and high resolution are required. The value of C must be chosen to ensure that the RC time constant is very small compared to the sample period. Design considerations Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 91 NXP Semiconductors

Figure 34. RC circuit for ADC input against transient over-voltages. Figure 35. High voltage measurement with an ADC input

6.1.4 Digital design

Ensure that all I/O pins cannot get pulled above VDD (Max I/O is VDD+0.3V).

  • RESET_b pin Design considerations 92 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

6.1.5 Crystal oscillator

MCU clock system, refer to the following table and diagrams. The feedback resistor, RF, is incorporated internally with the low power oscillators. An external feedback is required when using high gain (HGO=1) mode. frequency above 2 MHz does not require any series resistance. Figure 40. RTC Oscillator (OSC32) module connection – Diagram 1 Table 64. External crystal/resonator connections Figure 41. Crystal connection – Diagram 2

Figure 42. Crystal connection – Diagram 3 to the crystal oscillator circuit.

6.2 Software considerations

software enablement solutions, which can reduce development costs and time to market. more information and supporting collateral.

  • Tower System Development Platform: http://www.nxp.com/tower IDEs for Kinetis MCUs
  • Kinetis Design Studio IDE: http://www.nxp.com/kds
  • Partner IDEs: http://www.nxp.com/kide Run-time Software
  • Kinetis SDK: http://www.nxp.com/ksdk
  • Kinetis Bootloader: http://www.nxp.com/kboot
  • ARM mbed Development Platform: http://www.nxp.com/mbed For all other partner-developed software and tools, visit http://www.nxp.com/partners. Design considerations 96 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

7 Part identification

7.1 Description

values of these fields to determine the specific part you have received.

7.2 Format

7.3 Fields

Table 65. Part number fields description

  • P = Prequalification KE## Kinetis family • KE18, KE16, KE14 A Key attribute • D = Cortex-M4 with DSP
  • F = Cortex-M4 with DSP and FPU FFF Program flash memory size • 512 = 512 KB R Silicon revision • (Blank) = Main
  • A = Revision after main T Temperature range (°C) • V = –40 to 105
  • LL = 100 LQFP (14 mm x 14 mm) CC Maximum CPU frequency (MHz) • 16 = 168 MHz N Packaging type • R = Tape and reel
  • (Blank) = Trays Part identification Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 97 NXP Semiconductors

7.4 Example

This is an example part number: MKE18F512VLL16

8 Revision history

The following table provides a revision history for this document. Table 66. Revision history 09/2016 Initial public release.

  • Minor correction: V DDE symbol should be VDD, in the "DC electrical specifications" table.
  • Minor update in the "Clocking block diagram" figure.
  • Minor update in the "Analog design" section. 2.2 (internal version) 06/2017 • Updated the "Voltage and current operating ratings" section.
  • Minor update in the "Pinout decoupling" figure.
  • Fixed the "Description" collumn of STOP and VLPS mode rows, in the "Power consumption operating behaviors" table. 2.3 (internal version) 08/2017 • Minor update in the "Clock interfaces" section of the feature list, on the front matter cover pages.
  • Minor fix in the VLPW row of "Power consumption operating behaviors" table: the values for IRC8M and IRC2M are swapped.
  • Some updates in the "External Oscillator electrical specifications (OSC32)" and "External Oscillator electrical specifications (OSC)" tables.
  • Some updates in the "External Oscillator frequency specifications (OSC32)" and "External Oscillator frequency specifications (OSC)" tables. (public release) 07/2018 • Updated the figure "Memory map".
  • Minor updates in the figures "Oscillator connections scheme (OSC32)" and "Oscillator connections scheme (OSC)".
  • Some updates of V IH and VIL in the "External Oscillator electrical specifications (OSC32)" and "External Oscillator electrical specifications (OSC)" tables, and minor editorial fix.
  • Updated the table "Fast internal RC Oscillator electrical specifications": FIRC is trimmed to 48 MHz only, in this device.
  • Updated the figure "ADC input impedance equivalency diagram".
  • Corrected the unit as uA, in the I DDA_ADC row of the table "12-bit ADC characteristics".
  • Footnote updated in the tables "LPSPI master mode timing" and "LPSPI slave mode timing".
  • Corrected the minimum and the maximum values of V LVRX in the "VDD supply LVR, LVD and POR operating requirements" table.
  • Updated the "Voltage and current operating requirements" table. Table continues on the next page...

Revision history

98 Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 NXP Semiconductors

Table 66. Revision history (continued) MHz only in this device. Up to 50 MHz DC external square wave input clock.

  • Minor fix in Figure 4.
  • Note added after Table 5.
  • Statement restored in the section RTC : The time counter within the RTC is clocked by a 32.768 kHz clock sourced from an external crystal using the oscillator, or clock directly from RTC_CLKIN pin.
  • Minor fix in Table 23.
  • Some major updates in Table 53.
  • Some minor updates in tables "LPSPI master mode timing" and "LPSPI slave mode timing", including the footnotes, in the section LPSPI electrical specifications. 4.1 (public release) 11/2021 • Added errata for Mask 1N79P, in the "Related Resources" table of cover page.
  • Minor update in the "Ports summary" table: PTC4=Pull down.
  • Minor edit in the "Ordering information" table: Marking(Line1/Line2) column is removed.

Kinetis KE1xF with up to 512 KB Flash, Rev. 4.1, 11/2021 99 NXP Semiconductors

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