MIG50Q7CSB1X TOSHIBA | Alldatasheet
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TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q7CSB1X (1200V/50A 7in1) High Power Switching Applications Motor Control Applications /Gb7/G20Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. /Gb7/G20The electrodes are isolated from case. /Gb7/G20V CE (sat) = 2.2 V (typ.) /Gb7/G20UL recognized File No. E87989 /Gb7/G20Weight: 278 g (typ.) Equivalent Circuit GND IN FO V D VS OUTGND GND IN FO V D VS OUT GND GND IN FO V D VS OUTGND GND IN FO V D VS OUT GND UV W B N P 16 19 20 18 17 14 1315 4 3 2 18 7 6 5 12 11 10 9 GNDIN FO V D VS OUTGND GND IN FO V D VS OUT GND GNDINFO V D VS OUTGND
Package Dimensions: TOSHIBA 2-108G1A 19. IN (Z) 20. GND (L) Unit: mm
- IN (Z) 20. GND (L) Unit: mm
Maximum Ratings (unless otherwise specified, Tj /G3d/G3d/G3d/G3d 25°C) Stage Characteristic Condition Symbol Ratings Unit Supply voltage P-N power terminal V CC 900 V Collector-emitter voltage /Gbe V CES 1200 V Collector current Tc /G3d 25°C, DC I C 50 A Forward current Tc /G3d 25°C, DC I F 50 /G20 A Collector power dissipation Tc /G3d 25°C P C 580 W Inverter Junction temperature /Gbe T j 150 °C Supply voltage P-N power terminal V CC 900 V Collector-emitter voltage /Gbe V CES 1200 V Collector current Tc /G3d 25°C, DC I C 40 A Reverse voltage /Gbe V R 1200 /G20 V Forward current Tc /G3d 25°C, DC I F 40 /G20 A Collector power dissipation Tc /G3d 25°C P C 500 W Brake Junction temperature /Gbe T j 150 °C Control supply voltage V D-GND terminal V D 20 V Input voltage IN-GND terminal V IN 20 V Fault output voltage FO-GND terminal V FO 20 V Control Fault output current FO sink current I FO 14 mA Operating temperature /Gbe/G20 Tc /G2d20~/G2b100 °C Storage temperature range /Gbe/G20 Tstg /G2d40~/G2b125 °C Isolation voltage AC 1 minute V ISO 2500 V Screw torque (terminal) M4 /Gbe 2 N·m Module Screw torque (mounting) M5 /Gbe 3 N·m
Electrical Characteristics
- Inverter Stage Characteristic Symbol Test Condition Min Typ. Max Unit Tj /G3d 25°C /Gbe /Gbe 1 Collector cut-off current I CEX V CE /G3d 1200 V Tj /G3d 125°C /Gbe /Gbe 10 mA Tj /G3d 25°C /Gbe 2.2 2.6 Collector-emitter saturation voltage V CE (sat) VD /G3d 15 V, IC /G3d 50 A, VIN /G3d 15 V /Gae 0 V Tj /G3d 125°C /Gbe /Gbe 3.0 /G20 V Forward voltage V F I F /G3d 50 A, Tj /G3d 25°C /Gbe 2.4 2.8 /G20V ton /Gbe/G202.0 3.0 tc (on) /Gbe/G200.3 /Gbe trr /Gbe/G200.3 /Gbe toff /Gbe/G201.5 2.5 Switching time tc (off) VCC /G3d 600 V, IC /G3d 50 A, VD /G3d 15 V, VIN /G3d 15 V /Gab 0 V, Tj /G3d 25°C, Inductive load (Note 1) /Gbe/G200.4 /Gbe/G20 /G6ds Note 1: Switching time test circuit and timing chart.
- Brake Stage Characteristic Symbol Test Condition Min Typ. Max Unit Tj /G3d 25°C /Gbe /Gbe 1 Collector cut-off current I CEX V CE /G3d 1200 V Tj /G3d 125°C /Gbe /Gbe 10 mA Tj /G3d 25°C /Gbe 2.2 2.6 Collector-emitter saturation voltage V CE (sat) VD /G3d 15 V, IC /G3d 40 A, VIN /G3d 15 V /Gae 0 V Tj /G3d 125°C /Gbe /Gbe 3.0 /G20 V Tj /G3d 25°C /Gbe /Gbe 1 /G20 Reverse current I R V R /G3d 1200 V Tj /G3d 125°C /Gbe /Gbe 10 /G20 mA Forward voltage V F I F /G3d 40 A, Tj /G3d 25°C /Gbe 1.7 2.1 /G20V ton /Gbe/G202.0 3.0 tc (on) /Gbe/G200.75 /Gbe trr /Gbe/G200.7 /Gbe toff /Gbe/G201.5 2.5 Switching time tc (off) VCC /G3d 600 V, IC /G3d 40 A, VD /G3d 15 V, VIN /G3d 15 V /Gab 0 V, Tj /G3d 25°C, Inductive load (Note 1) /Gbe/G200.3 /Gbe/G20 /G6ds Note 1: Switching time test circuit and timing chart. 3. Control Stage (Tj /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit High side I D (H) /Gbe/G2013 17 Control circuit current Low side I D (L) VD /G3d 15 V /Gbe/G2052 68 mA Input-on signal voltage V IN (on) V D /G3d 15 V 1.4 1.6 1.8 V Input-off signal voltage V IN (off) V D /G3d 15 V 2.2 2.5 2.8 V Protection I FO (on) 8 /G20 10 12 Fault output current Normal I FO (off) VD /G3d 15 V /Gbe/G20 /Gbe 0.1 mA Inverter 80 /Gbe/G20 /Gbe Over current protection trip level Brake OC V D /G3d 15 V, Tj /G3c/G3d125°C 65 /Gbe/G20 /Gbe A Inverter 80 /Gbe/G20 /Gbe Short-circuit current protection trip level Brake SC V D /G3d 15 V, Tj /G3c/G3d125°C 65 /Gbe/G20 /Gbe A Over current cut-off time t off (OC) V D /G3d 15 V /Gbe 5 /Gbe /G6ds Trip level OT 110 118 125Over temperature protection Reset level OTr Case temperature /Gbe 98 /Gbe Trip level UV 11.0 12.0 12.5Control supply under voltage protection Reset level UVr /Gbe 12.0 12.5 13.0 V Fault output pulse width t FO V D /G3d 15 V 1 2 3 ms 4. Thermal Resistance (Tc /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Inverter IGBT stage /Gbe/G20 /Gbe/G200.215 Inverter FRD stage /Gbe/G20 /Gbe/G200.464 Brake IGBT stage /Gbe/G20 /Gbe/G200.25 Junction to case thermal resistance R th (j-c) Brake FRD stage /Gbe/G20 /Gbe/G200.6 °C/W Case to fin thermal resistance R th (c-f) Compound is applied /Gbe 0.017 /Gbe °C/W
Switching Time Test Circuit Timing Chart 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr Input Pulse VIN Waveform IC Waveform VCE Waveform 90% PG TLP559 Intelligent power module VD IN GND OUT VS GND U (V, W, B) P VCC VD IN GND OUT VS GND IF /G3d 16 mA N 15 V 0.1 /G6dF 10 /G6dF 15 k/G57 15 V 0.1 /G6dF 10 /G6dF 15 k/G57
- Recommended conditions for application Characteristic Symbol Test Condition Min Typ. Max Unit Supply voltage VCC P-N Power terminal /Gbe/G20600 800 V Control supply voltage VD V D-GND Signal terminal 13.5 15 16.5 V Carrier frequency fc PWM Control /Gbe/G20 /Gbe 20 kHz Dead time tdead Switching time test circuit (see page.6) (Note 2) 3 /Gbe /Gbe/G20 /G6ds Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead
Tj /G3d 25°C IC – VCE IC – VCE Switching time – IC Switching time – IC IF – VF trr, Irr – IF Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Collector current I C (A) Collector current I C (A) Forward voltage V F (V) Forward current I F (A) Collector current I C (A) Collector current I C (A) Switching time ( /G6ds) Switching time ( /G6ds) Peak reverse recovery current Irr (A) Reverse recovery time trr ( /Gb410 nS) Forward current I F (A) 100 13 4 VD /G3d 17 V VD /G3d 15 V Common emitter Tj /G3d 125°C VD /G3d 13 V 0.3 0.1 0.03 0.01 20 40 6010 30 50 Tj /G3d 25°C VCC /G3d 600 V VD /G3d 15 V L-LOAD ton toff tc (off) tc (on) 0.3 0.1 0.03 0.01 20 40 6010 30 50 Tj /G3d 125°C VCC /G3d 600 V VD /G3d 15 V L-LOAD ton toff tc (off) tc (on) 100 1 3 4 Common cathode : Tj /G3d 25°C : Tj /G3d 125°C 100 20 40 60 Irr Common cathode : Tj /G3d 25°C : Tj /G3d 125°C trr 10 50 30
OC – Tc ID (H) – fc ID (L) – fc Reverse bias SOA Rth (t) – tw Inverter stage Rth (t) – tw Brake stage Case temperature Tc (°C) Carrier frequency fc (kHz) Carrier frequency fc (kHz) Collector-emitter voltage V CE (V) Pulse width tw (s) Pulse width tw (s) High side control circuit current I D (H) (mA) Over current protection trip level OC (A) Collector current I C (A) Low side control circuit current I D (L) (mA) Transient thermal resistance Rth (t)/(°C/W) Transient thermal resistance Rth (t)/(°C/W) 250 5 10 15 20 VD /G3d 15 V 0.01 100.001 0.01 0.1 1 0.1 Diode stage Inverter stage Tc /G3d 25°C 0.01 100.001 0.01 0.1 1 0.1
1 Diode stage
Tc /G3d 25°C 150 1500 VD /G3d 15 V Inverter stage Brake stage 100 25 50 75 100 125 125 250 VD /G3d 15 V 5 10 15 20 100 14000 OC 200 400 600 800 1000 1200 Tj /G3c/G3d125°C VD /G3d 15V
0.1 20 40 6010 30 50 VCC /G3d 600 V VD /G3d 15 V L-LOAD : Tj /G3d 25°C : Tj /G3d 125°C Turn on loss – IC Turn off loss – IC Collector current I C (A) Collector current I C (A) Turn off loss Eoff (mJ) Turn on loss Eon (mJ) 100 0.1 10 40 60 VCC /G3d 600 V VD /G3d 15 V L-LOAD : Tj /G3d 25°C : Tj /G3d 125°C 50 3010
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE