MIG400Q2CMB1X TOSHIBA | Alldatasheet
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Technical content
TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG400Q2CMB1X (1200V/400A 2in1) High Power Switching Applications Motor Control Applications Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case. Low thermal resistance VCE (sat) = 2.4 V (typ.) UL recognized: File No.E87989 Weight: 380 g (typ.) Equivalent Circuit FO (L) GND (L) IN (L) VD (L) FO (H) GND (H) IN (H) VD (H) FO GND IN VD GND VS OUT C2/E1 FO GND IN VD GND VS OUT
Package Dimensions: TOSHIBA 2-123C1A Unit: mm FO (L) GND (L) IN (L) VD (L) FO (H) GND (H) IN (H) VD (H)
Unit: mm FO (L) GND (L) IN (L) VD (L) FO (H) GND (H) IN (H) VD (H)
Maximum Ratings (Tj 25°C) Stage Characteristics Condition Symbol Rating Unit Supply voltage P-N power terminal VCC 900 V Collector-emitter voltage VCES 1200 V Collector current Tc 25°C, DC IC 400 A Forward current Tc 25°C, DC IF 400 A Collector power dissipation Tc 25°C PC 3780 W Inverter Junction temperature Tj 150 Control supply voltage VD-GND terminal VD V Input voltage IN-GND terminal VIN V Fault output voltage FO-GND terminal VFO V Control Fault output current FO sink current IFO mA Operating temperature Tc 20~100 Storage temperature Tstg 40~125 Isolation voltage AC 1 min VISO 2500 V Screw torque (terminal) N･m Module Screw torque (mounting) N･m
Electrical Characteristics
- Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj 25°C Collector cut-off current ICEX VCE 1200 V Tj 125°C mA Tj 25°C 2.4 2.8 Collector-emitter saturation voltage VCE (sat) VD 15 V IC 400 A VIN 15 V 0 V Tj 125°C 2.8 V Forward voltage VF IF 400 A, Tj 25°C 2.4 2.8 V ton 2.0 3.0 tc (on) 0.5 trr 0.3 toff 1.6 2.5 Switching time tc (off) VCC 600 V, IC 400 A VD 15 V, VIN 15 V 0 V Tj 25°C, Inductive load (Note 1) 0.3 s Note 1: Switching time test circuit & timing chart
- Control stage (Tj 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit High side ID (H) Control circuit current Low side ID (L) VD 15 V mA Input on signal voltage VIN (on) 1.4 1.6 1.8 Input off signal voltage VIN (off) VD 15 V 2.2 2.5 2.8 V Protection IFO (on) Fault output current Normal IFO (off) VD 15 V 0.1 mA Overcurrent protection trip level OC VD 15 V, Tj 125°C 640 A Short-circuit protection trip level SC VD 15 V, Tj 125°C 640 A Overcurrent cut-off time toff (OC) VD 15 V s Trip level OT 110 118 125 Overtemperature protection Reset level OTr Case temperature Trip level UV 11.0 12.0 12.5 Control supply under voltage protection Reset level UVr 12.0 12.5 13.0 V Fault output pulse width tFO VD 15 V ms 3. Thermal resistance (Tc 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit IGBT 0.033 Junction to case thermal resistance Rth (j-c) FRD 0.068 °C/W Case to fin thermal resistance Rth (c-f) Compound is applied 0.013 °C/W
Switching Time Test Circuit Timing Chart PG TLP559 15 V 0.1 F 68 F 15 k Intelligent power module VD IN GND OUT VS GND C2/E1 VCC 15 V 0.1 F 68 F 15 k VD IN GND OUT VS GND IF 16 mA Input pulse VIN Waveform IC Waveform VCE Waveform 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr 90%
- Recommended conditions for application Characteristics Symbol Test Condition Min Typ. Max Unit Supply voltage VCC P-N power terminal 600 800 V Control supply voltage VD VD-GND signal terminal 13.5 16.5 V Carrier frequency fc PWM control kHz Dead time tdead Switching time test circuit (Note 2) s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead
Forward current IF (A) Switching time (s) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) Collector current IC (A) Switching time – IC Switching time (s) Collector current IC (A) Switching time – IC Forward voltage VF (V) IF – VF Forward current IF (A) trr, Irr – IF Peak reverse recovery current Irr (A) Reverse recovery time trr ( 10 ns) Common emitter Tj 125°C VD 13 V VD 15 V VD 17 V 700 100 200 300 400 500 600 900 800 1000 100 trr Irr Common cathode : Tj 25°C : Tj 125°C 100 200 300 400 500 Common cathode : Tj 25°C : Tj 125°C 700 100 200 300 400 500 600 900 800 700 Common emitter Tj 25°C 100 200 300 400 500 600 VD 17 V VD 13 V VD 15 V 900 800 Tj 25°C VCC 600 V VD 15 V L-LOAD 0.1 100 200 300 400 ton toff tc (on) tc (off) 0.01 500 0.1 0.01 ton toff tc (on) tc (off) Tj 125°C VCC 600 V VD 15 V L-LOAD 100 200 300 400 500
Turn on loss Eon (mJ) Transient themal resistance Rth (t) (°C/W) Case temperature Tc (°C) OC – Tc Over current protection trip level OC (A) Carrier frequency fc (kHz) ID – fc Control circuit current ID (mA) Collector-emitter voltage VCE (V) Reverse bias SOA Collector current IC (A) Pulse width tw (s) Rth (t) – tw Eon – IC Collector current IC (A) Eoff – IC Turn off loss Eoff (mJ) Collector current IC (A) 0.001 0.1 0.01 0.001 0.0003 0.003 0.03 0.3 0.01 0.1 Diode stage Transistor stage Tc 25°C 100 0.1 VCC 600 V VD 15 V L-LOAD : Tj 25°C : Tj 125°C 100 200 300 400 500 100 0.1 VCC 600 V VD 15 V L-LOAD : Tj 25°C : Tj 125°C 100 200 300 400 500 800 1400 400 160 640 Tj 125°C VD 15 V 320 480 720 1200 OC 150 VD 15 V 100 125 800 200 400 600 1200 1000 VD 15 V Tj 25°C
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 000707EAA RESTRICTIONS ON PRODUCT USE