MIG15Q806H TOSHIBA | Alldatasheet
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TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15Q806H, MIG15Q806HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS e@ Integrates Inverter, Converter Power Circuits and Thermistor in One Package. @ Output (Inverter Stage) : 3¢ 15A/1200V IGBT @ Input (Converter Stage) : 3¢ 15A/1600V Silicon Rectifier @ The Electrodes are Isolated from Case. © = §©Weight : 190g e Outline MIG15Q806H =: 2-108E5A MIG15Q806HA : 2-108E6A. EQUIVALENT CIRCUIT P Pl 30— u 504 v TO u 1 2 R Bo 40 60 80 Ss oU OV OW T 120 9go—' N 100—* ; llo— N ° 013 N N1 26100142 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical ses. It s the responsibilty of the buyer, when vlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © ‘he information contained herein is presented only as a guide for the applications, of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1999-06-03 1/8
Package Dimension Unit : mm MIG15Q806H sotos 7286205, 19.05205, 4x3.81215.24 5205 520: — | saa), "Paes | fT santos q 6.8208 fo ester ts - dd i hex si in 2] 3 =\\ ELEE 1 3
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sx11.43=57.5. 155208 93.0208 107.220.8 115t0.2x1.0202 105205 2-108E5A Unit: mm MIG15Q806HA soto. 7286205, 19.05205, 4x3.61=15.28 estos af ees | 65205 saz08 3.8120) 820.5 66.0405 Le etter —_+ To axl 3 =F Keener eeereadl oN = 11.43 =5715 155408 wwr2208 115£0.2x1.0202 i 23, val i] ch i Pore boys 3 105205 2-108E6A 1999-06-03 2/8
MAXIMUM RATINGS (Ta = 25°C) STAGE CHARACTERISTIC SYMBOL Collector-Emitter Voltage VCES 1200 Gate-Emitter Voltage VcEs 25/15 (25°C /80°C) Inverter eter Cunrent 50/80 (25°C /80°0) rorwara Curent taste a Collector Power Dissipation Repetitive Peak Reverse Voltage VRRM 1600 Converter [Average Output Rectified Current [To [15 TA Peak One Cycle Surge Forward I 250 rn Current (50 Hz, Non-Repetitive) FSM Storage Temperature Range —40~125 Module : 2500 Isolation Voltage AC nate [Seew Torque SCS SO dT CSCS WN | ELECTRICAL CHARACTERISTICS (Ta = 25°C) a. Inverter stage CHARACTERISTIC SYMBOL TEST CONDITION | san. | rye. [Max.|unrr] Gate Leakage Current IGES VGE = +20V, Vog =0 | — [| — |+500 Collector Cut-Off Current ICES VcE = 1200 V, Var = 0 [| — | — | 05] ma | Gate-Emitter Cut-Off Voltage Ig = 15mA, Vog =5V | — | eof — | v | Collector-Emitter Saturation Vv IG =15A Tj = 25°C [| — | 28] 32] Vv Voltage CE (sat) |vgp=i5v_ [Tj)=125C° | — | 31] 37] . Vcr = 10V, Veg =0, Switching cobs | = | 025] 020] Rg = 820 : Turn-Off Time Tj = 125°C Wote | — | 0.60] 0.90] Forward Voltage Ip=15A, Van =0 [= 20, 2a, v_ | , Ip = 15A, VgE = —10V, Reverse Recovery Time ter di/dt = 200 A/ ps 0.10) 0.25) ys [transistor ———SCS~sC CY, ‘Thermal Resistance Ringe) [Diode SCC — | — | tl 1999-06-03 3/8
b. Converter stage CHARACTERISTIC [SvMBoL | __THST CONDITON Repetitive Peak Reverse ~ ow fre-vey [|| | Peak Forward Voltage Tans 6A = [05 30 |_| Peak One Cycle Surge Forward . Current IFSM 50 Hz sine-half-wave 250 A Thermal Resistance [Rags | | = | = Pao or c. Thermistor CHARACTERISTIC [SvMpoL | TEST CONDON [MIN [TP [MAX [om] TM = 02mA, T= 25 (Note 1) : Switching Time Test Circuit & Timing Chart Vv pee om 490% i -VGE Saale ala balehattateteteataetatatetetete oh Wiad f Hl Tei] L Voc i i i j Rg i iy Io \\-90% ' ift ' \\ 10%} P-L. 10% Tt ite tt te t ut Lone ton toff * 1999-06-03 4/8
a. Inverter stage Ic - VCE Ic - VcE 30) 1 30 17 iL] j . COMMON le . COMMON i = EMITTER "7 = EMITTER Hy 20 | ar) La 2 / 2 | 3 / 3 J g Y) 8 /| 10) 10] g y g y a 3 Il, 8v
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8 | AAR = ° | AA tt cer ATT i ti lt 4 ALT 0 2 4 6 8 10 ° 2 4 6 8 70 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) ~ VCE - VGE VCE - VGE S 16; S 16) = ELLE case > LLELTT eae
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SWITCHING TIME - Ic SWITCHING TIME - Rg ==} 2 Semesters EE Er g Pope g ae, von | LTT a ton 3 at eer oe et TI E beet | III Sot Bp ee al Bo fj — neko eel — HE : P01 Pa) a aan COMMON EMITTER COMMON EMITTER [yy Ty [eT TTT} vec ent, vegeeev = | | TTI aE: svete [| | |Illll moe Te = 125°C oe Te = 125°C 0.01! 0.01! 1 10 100 10 100 1000 COLLECTOR-CURRENT Ig (A) GATE RESISTANCE Rg (Q) SWITCHING LOSS - Ic SWITCHING LOSS — RG — SS a, 10 _— ST —— a re eer eeeiat See eri eesia! = Ett HTH - tea
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FI ~ Lge ee 2 ri tLLEEELeL et [|| egy all Bo wWEESES == == == 555 2 (a= —Seea ee eee ee ee eset eesti eesti esi | 3 Voo = 900 Fe f= Ft Ft] es | 8 Vor = fis On 2 go Lteere | TTT TTT PTT weer TE ETT TT TTT | & 0.001 0.01 On 1 10 0 200 400 600 800 ©1000 1200 1400 PULSE WIDTH tw (s) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1999-06-03 7/8
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200 400600 800 1000-1200" 1400 COLLECTOR-EMITTER VOLTAGE VoR (V) b. Converter stage [_comton catnope ES 3 SS aa EE Ea eee Geeta peeet eer =z a SS = — oo a BEE rrr es LETT yi | | | 2. UU eo TT A ——— 5 baa Saat Pee soe ECS ef Pps ee] 2 GHA se oe Evol terre] TIM TT TMi at. IT | | [| | | G0or Ot ot 1 10 0 06 1 18 2 PULSE WIDTH ty (s) FORWARD VOLTAGE Vp (V) 1999-06-03 8/8