MIG10J503 TOSHIBA | Alldatasheet
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TOSHIBA INTELLIGENT POWER MODULE M I G 1 0 J 5 0 3 MIG10J503 is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase f ull bridge type, and IC by the original high-voltage SOI(silicon-on-insulator) process drives these directly in response to a PWM signal . Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive wit hout the interface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible. Furthermore, each lower arm emitter terminal has been independent s o that detection can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and Over Temperature Protection. Original hig h thermal conduction resin is adopted as a package, and low heat resistance is realized. Feature
- The 4th generation trench gate thin wafer NPT IGBT is adopted.
- FRD is built in.
- The level shift circuit by high-voltage IC is built in.
- The simplification of a high side driver power supply is possible by the bootstrap system.
- Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection function are built in.
- Short Circuit Protection and Over Temperature Protection state are outputted.
- The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control.
- Low thermal resistance by adoption of original high thermal conduction resin. Since this product is MOS structure, it should be careful of static electricity in the case of handling. This tentative specification is a development examination stage, and may change the contents without a preliminary announcement. Weight:TBD g (Typ.)
U PGND U V W VBB V PGND V VBB W PGND W Mark side SGND U IN U C U VCC U IN X FO U BS U SGND V IN V C V VCC V IN Y FO V BS V SGND W IN W C W VCC W IN Z FO W BS W 26 27 Lot No. MIG10J503 Toshiba logotype JAPAN product number
U PGND U V W SGND U IN U C U VCC U IN X FO U BS U SGND V IN V C V VCC V IN Y FO V BS V SGND W IN W C W IN Z FO W BS W VCC W VBB V VBB W PGND V PGND W High Side Driver Low Side Driver Over Current Over Temp Under Voltage Under Volatge High Side Driver Low Side Driver Over Current Over Temp Under Voltage Under Volatge
Pin No. Symbol Pin Description
1 PGND U U-Phase Power Ground piniConnect a current detecting
resistor between this pin and SGND U pin)
2 U U-Phase output pin
3 VBB U U-Phase high-voltage power supply pin
4 PGND V V-Phase Power Ground piniConnect a current detecting
resistor between this pin and SGND V pin)
5 V V-Phase output pin
6 VBB V V-Phase high-voltage power supply pin
7 PGND W W-Phase Power Ground piniConnect a current detecting
resistor between this pin and SGND W pin)
8 W W-Phase output pin
9 VBB W W-Phase high-voltage power supply pin
10 C W W-Phase bootstrap capacitor connecting pin(-)
11 BS W W-Phase bootstrap capacitor connecting pin(+)
12 SGND W W-Phase Signal Ground pin
13 IN Z W-Phase low-side input pin(Negative logic)
14 IN W W-Phase high-side input pin(Negative logic)
15 FO W W-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) 16 VCC W W-Phase control power supply (+15V typ.)
17 C V V-Phase bootstrap capacitor connecting pin(-)
18 BS V V-Phase bootstrap capacitor connecting pin(+)
19 SGND V V-Phase Signal Ground pin
20 IN Y V-Phase low-side input pin (Negative logic)
21 IN V V-Phase high-side input pin (Negative logic)
22 FO V V-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) 23 VCC V V-Phase control power supply (+15V typ.)
24 C U U-Phase bootstrap capacitor connecting pin (-)
25 BS U U-Phase bootstrap capacitor connecting pin (+)
26 SGND U U-Phase Signal Ground pin
27 IN X U-Phase low-side input pin (Negative logic)
28 IN U U-Phase high-side input pin (Negative logic)
29 FO U U-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) 30 VCC U U-Phase control power supply (+15V typ.)
Protection Circuit Detection State Input hfas State Fault Output High Side Under Voltage Low Side Under Voltage Short Circuit Over Temperature IN(X)High Side Arm IN(X)Low Side Arm High Side Arm Low Side Arm FO(X) Un-Detecting Un-Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Un-Detecting Un-Detecting Un-Detecting Un-Detecting H L OFF ON OFF Un-Detecting Un-Detecting Un-Detecting Un-Detecting L H ON OFF OFF Un-Detecting Un-Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Detecting Un-Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Detecting Un-Detecting Un-Detecting Un-Detecting H L OFF ON OFF Detecting Un-Detecting Un-Detecting Un-Detecting L H OFF OFF OFF Detecting Un-Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting H L OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting L H OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting H L OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting L H OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Un-Detecting Un-Detecting Detecting Un-Detecting H H OFF OFF ON Un-Detecting Un-Detecting Detecting Un-Detecting H L OFF OFF ON Un-Detecting Un-Detecting Detecting Un-Detecting L H OFF OFF ON Un-Detecting Un-Detecting Detecting Un-Detecting L L OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting H H OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting H L OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting L H OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting L L OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting H H OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting H L OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting L H OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting L L OFF OFF ON EThe above has indicated a part for single arm. EThere is no relevance of operation between arms. EWhen the input of a high side arm and a low side arm is simultaneously set to "L", IGBT of a high side arm and a low side arm turns off. EFO (X) terminal is turned on in the meantime at the same time, as for the output of Phase which detected the load short circuit state, it will maintain the OFF between 10ms, if a Short Current Protection detects a Short Current state. Although an incoming signal is reset by an upper arm and a lower arm being simultaneously set to "H" in the back in this state, OFF of an output and FO (X) are maintained between 10ms. Although FO (X) is turned off when FO (X) terminal for 10ms will not be in the simultaneous "H" state of an upper arm and a lower arm in during ON time, an output maintains OFF. This release is made by an upper arm and a lower arm being simultaneously set to "H." ( Short Current Protection is a non -repetition. When FO (X) turns on, please turn off the input of all Phase.) EIf an Over Temperature Protection circuit detects an Over Temperature state, while the output of Phase which detected the Over Temperature Protection state is turned off, FO (X) terminal turns it on. This state will return operation, if temperature falls to Over Temperature P rotection detection retu rn temperature ( Over Temperature Protection temperature- Over Temperature Protection hysteresis).
Absolute Maximum Rating (Tj = 25°C) Item Symbol Rating Unit VBB 450 V VBB(surge) 500 V VCC 20 V Power Supply Voltage VBS 20 V Collector-Emitter Voltage VCES 600 u Each Collector Current (DC) IC }10 A Each Collector Current (PEAK) ICP }20 \` Input Voltage VIN 20 V Fault Output Supply Voltage VFO 20 V Fault Output Current IFO 15 mA PGND-SGND Voltage Difference VPGND-SGND }5 u Output Voltage Rate of Change dv/dt 20 ku/Ês Collector Power Dissipation (Per 1 IGBT Chip) PC 43 W Collector Power Dissipation (Per 1 FRD Chip) PC 25 W Operating Temperature TOPE −20~100 °C Junction Temperature Tj 150 °C Storage Temperature Tstg −40~125 °C Isolation Voltagei60Hz sinusoidal ,ACj VISO 2500 (1min) Vrms
Electrical Characteristics (Tj = 25°C) Item Symbol Condition Min. Typ. Max. Unit VBB 50 300 400 VCC 13.5 15 17 Operating Power Supply Voltage VBS 13.5 15 17 V IBB VBB = 400 V ¤VIN = 5 ViParmj 1 mA VCC = 15 V¤VIN = 5 ViParmj 0.8 P.5 mA ICC VCC = 15 V¤VIN = 0 ViParmj 1.1 P.5 mA VCC = 15 V¤VIN = 5 ViParmj 330 600 ÊA Current dissipation IBS VCC = 15 V¤VIN = 0 ViParmj 470 1000 ÊA VIH VIN = “H” 3.5 2.8 input Voltage VIL VIN = “L” 2.3 1.5 V input Voltage hysteresis VINhys IIH VCC = 15 V¤VIN = 5V 50 100 200 Input Current IIL VCC = 15 V¤VIN = 0 V 75 150 300 µA VsatU VCC = VBS15V, IC = 10 A, Upper Arm 1.5 2.0 IGBT Saturation Voltage VsatL VCC = 15V, IC = 10 A, Lower Arm 1.5 2.0 V VFU IF = 10 A, Upper Arm 1.3 1.9 FRD Forward Voltage VFL IF = 10 A, Lower Arm 1.3 1.9 V Fault Output Voltage VFO IFO = 5 mA, 0.8 1.2 V Short Current Protection Voltage VR Short Current Protection 0.45 0.5 0.55 V Short Current Protection delay time VR Short Current Protection 0.5 1 2 µs Over Temperature Protection TSD Over Temperature Protection 150 165 200 °C Over Temperature Protection hys. ΔTSD Over Temperature Protection return 20 °C Under Voltage Protection VBSUVD Upper Arm Under Voltage Protection 10.0 11.0 12.0 Under Voltage Protection recovery VBSUVR Upper Arm Under Voltage Protection recovery 10.5 11.5 12.5 Under Voltage Protection VccUVD Lower Arm Under Voltage Protection 10.5 11.5 12.5 Under Voltage Protection recovery VccUVR Lower Arm Under Voltage Protection recovery 11.0 12.0 13.0 V IGBT turn-on propagation delay time tdON VBB = 300 V, IC = 10A, Inductance Load 1.3 TBD IGBT rise time tr VBB = 300 V, IC = 10A, Inductance Load 0.1 TBD IGBT turn-on time tON VBB = 300 V, IC = 10A, Inductance Load 1.4 TBD IGBT turn-off propagation delay time tdOFF VBB = 300 V, IC = 10A, Inductance Load 1.2 TBD IGBT fall time tf VBB = 300 V, IC = 10A, Inductance Load 0.1 TBD IGBT turn-off time tOFF VBB = 300 V, IC = 10A, Inductance Load 1.3 TBD µs IGBT vertical arm turn -on, a turn -off propagation delay time lag | tOFFk- tONg| VBB = 300 V, IC = 10A, Inductance Load iinclude each Phasej 0 300 ns IGBT vertical arm turn -on, a turn -off propagation delay time lag | tOFFg- tONk| VBB = 300 V, IC = 10A, Inductance Load iinclude each Phasej 0 300 ns daed time tdaed VBB = 300 V, IC = 10A, Inductance Load 1 µs FRD reverse recovery time trr VBB = 300 V, IF = 10 A 100 ns
The example of an application circuit (in the case of not insulating with a control side) CONTROL CIRCUIT High Side Driver Low Side Driver Over Curre nt Over Temp Under Volt age Under Volt age Low Side Driver Over Curre nt Over Temp Under Volt age Under Volt age High Side Driver Low Side Driver Over Curre nt Over Temp Under Volt age Under Volt age VBB U PGND U V W SGND U IN U C U VCC U IN X FO U BS U SGND V IN V C V VCC V IN Y FO V BS V SGND W IN W C W IN Z FO W BS W VCC W High Side Driver VBB VBB PGND V PGND W M 15V High voltage
UnitFmm The B section details The A section details The C section details