MIG100J7CSB1W TOSHIBA | Alldatasheet
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Technical content
TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J7CSB1W (600V/100A 7in1) High Power Switching Applications Motor Control Applications /Gb7/G20Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. /Gb7/G20The electrodes are isolated from the case /Gb7/G20Low thermal resistance /Gb7/G20V CE (sat) = 1.9 V (typ.) /Gb7/G20UL recognized: File No.E87989 /Gb7/G20Weight: 278 g (typ.) Equivalent Circuit
Package Dimensions: TOSHIBA 2-108G1A Unit: mm 19. IN (Z) 20. GND (L)
Unit: mm 19. IN (Z) 20. GND (L)
Maximum Ratings (Tj /G3d/G3d/G3d/G3d 25°C) Stage Characteristic Condition Symbol Rating Unit Supply voltage P-N Power terminal V CC 450 V Collector-emitter voltage /Gbe V CES 600 V Collector current Tc /G3d 25°C, DC I C 100 A Forward current Tc /G3d 25°C, DC I F 100 /G20 A Collector power dissipation Tc /G3d 25°C, DC P C 590 W Inverter Junction temperature /Gbe Tj 150 °C Supply voltage P-N Power terminal V CC 450 V Collector-emitter voltage /Gbe V CES 600 V Collector current Tc /G3d 25°C, DC I C 50 A Reverse voltage /Gbe V R 600 V Forward current Tc /G3d 25°C, DC I F 50 A Collector power dissipation Tc /G3d 25°C, DC P C 340 W Brake Junction temperature /Gbe Tj 150 °C Control supply voltage V D-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Control Fault output current FO sink current IFO 14 mA Operating temperature /Gbe Tc /G2d20~ /G2b 100 °C Storage temperature Range /Gbe Tstg /G2d40~ /G2b 125 °C Isolation voltage AC 1 min V ISO 2500 V Screw torque (Terminal) M4 /Gbe 2 Module Screw torque (Mounting) M5 /Gbe 3 N･m
Electrical Characteristics
- Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj /G3d 25°C /Gbe /Gbe 1 Collector cut-off current I CEX V CE /G3d 600 V Tj /G3d 125°C /Gbe /Gbe 10 mA Tj /G3d 25°C 1.6 1.9 2.3 Collector-emitter saturation voltage V CE (sat) VD /G3d 15 V IC /G3d 100 A VIN /G3d 15 V /Gae 0 V Tj /G3d 125°C /Gbe 2.1 /Gbe/G20 V Forward voltage V F I F /G3d 100 A, Tj /G3d 25°C /Gbe 2.1 2.5 /G20V ton /Gbe/G201.3 2.2 tc (on) /Gbe 0.3 /Gbe trr /Gbe 0.2 /Gbe toff /Gbe 1.1 2.1 Switching time tc (off) VCC /G3d 300 V, IC /G3d 100 A VD /G3d 15 V, VIN /G3d 15 V /Gab 0 V Tj /G3d 25°C, Inductive load (Note 1) /Gbe 0.2 /Gbe /G6ds Note 1: Switching time test circuit & timing chart
- Brake stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj /G3d 25°C /Gbe /Gbe 1 Collector cut-off current I CEX V CE /G3d 600 V Tj /G3d 125°C /Gbe /Gbe 10 mA Tj /G3d 25°C /Gbe 1.8 2.2 Collector-emitter saturation voltage V CE (sat) VD /G3d 15 V IC /G3d 50 A VIN /G3d 15 V /Gae 0 V Tj /G3d 125°C /Gbe 2.0 /Gbe/G20 V Tj /G3d 25°C /Gbe /Gbe 1 Reverse current I R V R = 600 V Tj /G3d 125°C /Gbe /Gbe 10 mA Forward voltage V F I F /G3d 50 A, Tj /G3d 25°C 1.5 1.9 2.3 /G20V ton /Gbe/G201.3 1.8 tc (on) /Gbe 0.65 /Gbe trr /Gbe 0.8 /Gbe toff /Gbe 1.1 2.1 Switching time tc (off) VCC /G3d 300 V, IC /G3d 50 A VD /G3d 15 V, VIN /G3d 15 V /Gab 0 V Tj /G3d 25°C, Inductive load (Note 1) /Gbe 0.2 /Gbe /G6ds Note 1: Switching time test circuit & timing chart 3. Control stage (Tj /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit High side I D (H) /Gbe/G2013 17 Control circuit current Low side I D (L) VD /G3d 15 V /Gbe 52 68 mA Input on signal voltage V IN (on) 1.4 1.6 1.8 Input off signal voltage V IN (off) VD /G3d 15 V 2.2 2.5 2.8 V Protection I FO (on) /Gbe/G2010 12 Fault output current Normal I FO (off) VD /G3d 15 V /Gbe /Gbe 0.1 mA Inverter 160 /Gbe /Gbe Over current protection trip level Brake OC V D /G3d 15 V, Tj /G3c/G3d125°C 80 /Gbe /Gbe A Inverter 160 /Gbe /Gbe Short circuit protection trip level Brake SC V D /G3d 15 V, Tj /G3c/G3d125°C 80 /Gbe /Gbe A Over current cut-off time t off (OC) V D /G3d 15 V /Gbe 5 /Gbe /G6ds Trip level OT 110 118 125Over temperature protection Reset level OTr Case temperature /Gbe 98 /Gbe Trip level UV 11.0 12.0 12.5Control supply under voltage protection Reset level UVr /Gbe 12.0 12.5 13.0 V Fault output pulse width t FO V D /G3d 15 V 1 2 3 ms 4. Thermal resistance (Tc /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Inverter IGBT /Gbe/G20 /Gbe 0.210 Inverter FRD /Gbe /Gbe 0.313 Brake IGBT /Gbe /Gbe 0.360 Junction to case thermal resistance R th (j-c) Brake FRD /Gbe /Gbe 0.600 °C/W Case to fin thermal resistance R th (c-f) Compound is applied /Gbe 0.017 /Gbe °C/W
Switching Time Test Circuit Timing Chart PG TLP559 15 V 0.1 /G6dF 10 /G6dF 15 k/G57 Intelligent power module VD IN GND OUT VS GND U (V, W, B) P VCC 15 V 0.1 /G6dF 10 /G6dF 15 k/G57 VD IN GND OUT VS GND IF /G3d 16mA N Input pulse VIN Waveform IC Waveform VCE Waveform 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr 90%
- Recommended conditions for application Characteristics Symbol Test Condition Min Typ. Max Unit Supply voltage V CC P-N Power terminal /Gbe 300 400 V Control supply voltage V D V D-GND Signal terminal 13.5 15 16.5 V Carrier frequency fc PWM Control /Gbe/G20 /Gbe 20 kHz Dead time tdead Switching time test circuit (See page.6) (Note 2) 3 /Gbe /Gbe/G20 /G6ds Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead
:Tj = 25°C :Tj = 125°C 200 100 150 0.01 0 20 120 0.1 Tj = 125°C VCC /G3d 300 V VD /G3d 15 V L-Load ton toff tc (on) tc (off) 0.03 0.05 0.3 0.5 40 80 60 100 0.01 0 20 120 0.1 Tj = 25°C VCC /G3d 300 V VD /G3d 15 V L-Load ton toff tc (on) tc (off) 0.03 0.05 0.3 0.5 40 80 60 100 200 0 1 3 4 VD /G3d 17 V Common emitter Tj = 125°C 13 V 15 V 100 150 200 0 1 3 4 VD /G3d 17 V Common emitter Tj = 25°C 13 V 15 V 100 150 Forward current I F (A) Switching time ( /G6ds) Collector-emitter voltage V CE ( V ) IC – VCE Collector current I C (A) Collector-emitter voltage V CE ( V ) IC – VCE Collector current I C (A) Collector current I C (A) Switching time – IC Switching time ( /G6ds) Collector current I C (A) Switching time – IC Forward voltage V F (V) IF – VF Forward current I F (A) trr, Irr – IF Peak reverse recovery current Irr (A) Peak reverse recovery time trr ( /Gb410ns) 100 0 20 60 120 Common cathode :Tj = 25°C :Tj=125°C Irr trr 40 100
0.001 0.001 0.01 1 0.003 0.1 0.01 0.005 0.03 0.1 0.05 0.3 0.5 Tc /G3d 25°C Diode stage Transistor stage 0.001 0.001 0.01 1 0.003 0.1 0.01 0.005 0.03 0.1 0.05 0.3 0.5 Tc /G3d 25°C Diode stage Transistor stage OC 180 0 200 600 160 140 400 Tj /G3c/G3d125°C VD /G3d 15 V 100 100 300 700 500 120 100 0 5 15 25 VD /G3d 15 V Tj = 25°C 0 5 15 25 VD /G3d 15 V Tj = 25°C Transient thermal resistance Rth (t) (°C /W) Collector current I C (A) Case temperature T C ( ° C ) OC – TC Over current protection trip level OC (A) Carrier frequency f c (kHz) ID (H) – fc High side control circuit current I D (H) (mA) Carrier frequency f c (kHz) ID (L) – fc Low side control circuit current I D (L) (mA) Collector-emitter voltage V CE ( V ) Reverse bias SOA Pulse width tw (s) Rth (t) – tw Inverter stage Pulse width tw (s) Rth (t) – tw Brake stage Transient thermal resistance Rth (t) (°C /W) 300 0 25 75 150 150 250 50 100 125 100 VD /G3d 15 V Inverter stage Brake stage 200
0.01 0.1 0.3 60 12040 80 VCC /G3d 300 V VD /G3d 15 V L-LOAD : Tj /G3d 25°C : Tj /G3d 125°C 20 100 0.03 0.05 0.5 Turn on loss /G2d IC Turn off loss /G2d IC Collector current I C (A) Collector current I C ( A ) Turn off loss Eoff (mJ) Turn on loss Eon (mJ) 0.01 0.1 0.3 60 12040 80 VCC /G3d 300 V VD /G3d 15 V L-LOAD : Tj /G3d 25°C : Tj /G3d 125°C 20 100 0.03 0.05 0.5
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE