MID31C

MID31C DCCOM | Alldatasheet

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in general purpose amplifier and switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 3 A Total Power Dissipation(TC=25oC) PD 15 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 100 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA, IB=0 Collector Cutoff Current ICES - - 20 µA VCE=100V, VEB=0 ICEO - - 50 µA VCE=60V, IB=0 Emitter Cutoff Current IEBO - - 1 mA VEB=5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1.2 V IC=3A, IB=375mA Base-Emitter On Voltage(1) VBE(on) - - 1.8 V IC=3A, VCE=4V DC Current Gain(1) hFE1 25 - - - IC=1A, VCE=4V hFE2 10 - 50 - IC=3A, VCE=4V Transition Frequency fT 3 - - MHz IC=0.5A, VCE=10V, f=1MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% TO-251 Dimensions in inches and (millimeters) .284(7.20) .268(6.80) .217(5.50) .205(5.20) .268(6.80) .252(6.40) .256 (6.50) Min .035 (0.90) Max .032 (0.80) Max .181 .087(2.20) .059(1.50) .035(0.90) .024(0.60) .018(0.45) .022(0.55) .018(0.45) .063(1.60) .055(1.40) 1 2 3