MIC94030 MICREL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • 13.5V minimum drain-to-source breakdown
  • 0.75Ω typical on-resistance at 4.5V gate-to-source voltage
  • 0.45Ω typical on-resistance at 10V gate-to-source voltage
  • Operates with 2.7V gate-to-source voltage
  • Separate substrate connection for added control
  • Industry’s smallest surface mount package

Applications

  • Distributed power management
  • PCMCIA card power management
  • Battery-powered computers, peripherals
  • Hand-held bar-code scanners
  • Portable communications equipment

Ordering Information

Part Number Temperature Range* Package MIC94030BM4 –55 °C to +150°C SOT-143 MIC94031BM4 –55 °C to +150°C SOT-143 * Operating Junction Temperature Gate Source Drain Substrate Schematic Symbol MIC94030 MIC94031 Schematic Symbol Pin Configuration Typical PCB Layout S D G SS PCB heat sink plane improves heat dissipation PCB traces G S D SS ~500kΩ Internal gate-to-source pull-up resistor G S D SS Functional Diagrams Substrate SourceGate Drain P3x Part Identification Part Number Identification MIC94030BM4 P30 MIC94031BM4 P31 Patents 5,355,008; 5,589,702

Electrical Characteristics Voltage and current values are negative. Signs not shown for clarity. Symbol Parameter Condition (Note 1) Min Typ Max Units VBDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 13.5 V VGS Gate Threshold Voltage V DS = VGS , ID = 250µA 0.6 1.0 1.4 V IGSS Gate-Body Leakage V DS = 0V, VGS = 12V, Note 2, Note 3 1 µA R GS Gate-Source Resistor V DS = 0V, VGS = 12V, Note 2, Note 4 500 750 1000 k Ω C ISS Input Capacitance V GS = 0V, VDS = 12V 100 pF IDSS Zero Gate Voltage Drain Current VDS = 12V, VGS = 0V 25 µA VDS = 12V, VGS = 0V, TJ = 125°C 0.010 250 µA ID(ON) On-State Drain Current V DS = 10V, VGS = 10V, Note 5 6.3 A R DS(ON) Drain-Source On-State Resist. VGS = 10V, ID = 100mA 0.45 Ω VGS = 4.5V, ID = 100mA 0.75 1.00 Ω VGS = 2.7V, ID = 100mA 1.20 Ω gFS Forward Transconductance V DS = 10V, ID = 200mA, Note 5 480 mS Note 1 TA = 25°C unless noted. Substrate connected to source for all conditions Note 2 ESD gate protection diode conducts during positive gate-to-source voltage excursions. Note 3 MIC94030 only Note 4 MIC94031 only Note 5 Pulse Test: Pulse Width ≤ 80µsec, Duty Cycle ≤ 0.5% Absolute Maximum Ratings Voltage and current values are negative. Signs not shown for clarity. Continuous Drain Current T Total Power Dissipation Thermal Resistance Lead Temperature

0.00 0.25 0.50 0.75 1.00 1.25 1.50 R DS(ON) (Ω ) ID (A) On Resistance vs. Drain Current at 25°C VG = 10V VG = 4.5V 80µs Pulse Test 0.00 0.25 0.50 0.75 1.00 1.25 1.50 R DS(ON) (Ω ) ID (A) On Resistance vs. Drain Current at 125°C VG = 10V VG = 4.5V 80µs Pulse Test 100 120 140 160 DRAIN CURRENT (mA) DRAIN-TO-SOURCE VOLTAGE (V) Drain Characteristics 2.0V 1.8V 1.6V 1.4V VGS 1.2V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 02468 1 0 1 2 1 4 DRAIN CURRENT (A) DRAIN-TO-SOURCE VOLTAGE (V) Drain Characteristics 5.0V 4.5V 4.0V 3.5V 2.5V 2.0V 1.5V 1.0V VGS 300µs Pulse Test 02468 1 0 1 2 1 4 DRAIN CURRENT (A) DRAIN-TO-SOURCE VOLTAGE (V) Drain Characteristics VGS 10V 80µs Pulse Test