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Technical content

Features

  • 12V to 36V Operation
  • 550 ns Rise/Fall Time Driving 2000 pF
  • TTL-Compatible Input with Internal Pull-Down Resistor
  • Overcurrent Limit
  • Gate-to-Source Protection
  • Internal Charge Pump
  • 100 kHz Operation Guaranteed Over Full Tem- perature and Operating Voltage Range
  • Compatible with Current-Sensing MOSFETs
  • Current-Source Drive Reduces EMI

Applications

  • Lamp Control
  • Heater Control
  • Motor Control
  • Solenoid Switching
  • Switch-Mode Power Supplies
  • Circuit Breaker General Description The MIC5021 high-side MOSFET driver is designed to operate at frequencies up to 100 kHz (5 kHz PWM for 2% to 100% duty cycle) and is an ideal choice for high speed applications such as motor control, SMPS (switch mode power supplies), and applications using IGBTs. The MIC5021 can also operate as a circuit breaker with or without automatic retry. A rising or falling edge on the input results in a current source pulse or sink pulse on the gate output. This out- put current pulse can turn on a 2000 pF MOSFET in approximately 550 ns. The MIC5021 then supplies a limited current (<2 mA), if necessary, to maintain the output state. An overcurrent comparator with a trip voltage of 50 mV makes the MIC5021 ideal for use with a current-sens - ing MOSFET. An external low value resistor may be used instead of a sensing MOSFET for more precise overcurrent control. An optional external capacitor placed from the CT pin to ground may be used to con- trol the current shutdown duty cycle (dead time) from 20% to <1%. A duty cycle from 20% to about 75% is possible with an optional pull-up resistor from C T to VDD. Additional parts of the MIC502x family include the MIC5020 low-side driver and the MIC5022 half-bridge driver with a cross-conduction interlock. The MIC5021 is available in 8-lead SOIC and plastic DIP packages. Typical Application Circuit MIC5021 PDIP & SOIC High-Side Driver with Overcurrent Trip and Retry V DD INPUT C T GND V BOOST GATE SENSE- SENSE+ TTL INPUT RSENSE N-CHANNEL POWER MOSFET +12V to +36V MIC5021 10μF 2.7 nF LOAD RSENSE = 50m V ITRIP * INCREASES TIME BEFORE RETRY OPTIONAL* High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit

DS20005677B-page 2  2016 - 2021 Microchip Technology Inc. and its subsidiaries. Package Types Functional Block Diagram MIC5021 SOIC Top View MIC5021 PDIP Top View V BOOST GATE SENSE- SENSE+ VDD INPUT CT GND VDD INPUT CT GND V BOOST GATE SENSE- SENSE+ SENSE- SENSE+ 6V INTERNAL REGULATOR CINT 2I1 50mV INPUT ONE- SHOT GATE CT OFF ON FAULT NORMAL I210I2 15V CHARGE PUMP VDD VBOOST TRANSISTOR: 106

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 3 MIC5021

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings † Operating Ratings † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN, Gate CL = 1500 pF (IRF540 MOSFET). Parameters Sym. Min. Typ. Max. Units Conditions DC Supply Current — — 1.8 4 mA VDD = 12V, Input = 0V — — 2.5 6 VDD = 36V, Input = 0V — — 1.7 4 VDD = 12V, Input = 5V — — 2.5 6 VDD = 36V, Input = 5V Input Threshold — 0.8 1.4 2.0 V — Input Hysteresis — — 0.1 — V — Input Pull-Down Current — 10 20 40 µA Input = 5V Current-Limit Threshold — 30 50 70 mV Note 1 Gate On Voltage — 16 18 21 V VDD = 12V (Note 2) — 46 50 52 VDD = 36V (Note 2) Gate On-Time (Fixed) tG(ON) 2 6 10 µs Sense Differential  70 mV (Note 8) Gate Off-Time (Adjustable) t G(OFF) 10 20 50 µs Sense Differential  70 mV, CT = 0 pF (Note 8) Gate Turn-On Delay tDLH — 500 1000 ns Note 3 Gate Rise Time tR — 400 500 ns Note 4 Gate Turn-Off Delay tDLH — 800 1500 ns Note 5 Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio. 2: DC measurement. 3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V. 4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V. 5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage) to 17V. 6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V. 7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle. 8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.

DS20005677B-page 4  2016 - 2021 Microchip Technology Inc. and its subsidiaries. Gate Fall Time tF — 400 500 ns Note 6 Max. Operating Frequency f MAX 100 150 — kHz Note 7 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN, Gate CL = 1500 pF (IRF540 MOSFET). Parameters Sym. Min. Typ. Max. Units Conditions Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio. 2: DC measurement. 3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V. 4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V. 5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage) to 17V. 6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V. 7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle. 8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 5 MIC5021 TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units Conditions Junction Thermal Resistances Thermal Resistance, PDIP-8Ld JA –40 — 85 °C Maximum Ambient Tem - perature Thermal Resistance, SOIC-8Ld JA –40 — 85 °C Maximum Ambient Tem - perature Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum rating. Sustained junction temperatures above the maximum rating can impact the device reliability.

DS20005677B-page 6  2016 - 2021 Microchip Technology Inc. and its subsidiaries.

2.0 TIMING DIAGRAMS

FIGURE 2-1: Normal Operation. FIGURE 2-2: Fault Operation, CT = Open. FIGURE 2-3: Fault Condition, CT = Grounded. INPUT 0V TTL (H) SOURCE 50mVSENSE +,– DIFFERENTIAL GATE 15V (MAX.) INPUT 0V TTL (H) SOURCE 50mVSENSE +,– DIFFERENTIAL GATE 15V (MAX.) 6μs 20μs INPUT 0V TTL (H) SOURCE 50mVSENSE +,– DIFFERENTIAL GATE 15V (MAX.) 6μs

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 7 MIC5021

3.0 TYPICAL PERFORMANCE CURVES

FIGURE 3-1: Supply Current vs. Supply Voltage. FIGURE 3-2: Gate Voltage Change vs. Supply Voltage. FIGURE 3-3: Gate Turn-On Delay vs. Supply Voltage. FIGURE 3-4: Gate Turn-On Delay vs. Supply Voltage. FIGURE 3-5: Gate Turn-On Delay vs. Gate Capacitance. FIGURE 3-6: Gate Turn-Off Delay vs. Supply Voltage. Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.0 0.5 1.0 1.5 2.0 2.5 5 1 01 52 02 53 03 54 0 ISUPPLY (mA) VSUPPLY (V) VIN =0 V VIN =5 V 5 1 01 52 02 53 03 54 0 VGATE (V) VSUPPLY (V) VGA TE=V GA TE–V SUPPLY 650 700 750 800 850 900 5 1 01 52 02 53 03 54 0 tON 4V (ns) VSUPPLY (V) VGATE =V SUPPLY +4 V CL = 1500pF(IRCZ34) CBOOST =0 . 0 1 μ F INCLUDES PROPAGATION DELAY 750 800 850 900 950 1000 5 1 01 52 02 53 03 54 0 tON 10V (ns) VSUPPLY (V) VGATE =V SUPPLY + 10V CL = 1500pF(IRCZ34) CBOOST =0 . 0 1 μ F INCLUDES PROPAGATION DELAY 0.0 0.5 1.0 1.5 2.0 2.5 1x10 0 1x101 1x102 1x103 1x104 1x105 tON (μs) CGATE (pF) VGATE =V SUPPLY +4 V VSUPPLY = 12V INCLUDES PROPAGATION DELAY 750 1000 1250 1500 1750 2000 5 1 01 52 02 53 03 54 0 tOFF 4V (ns) VSUPPLY (V) VGA TE=V SUPPLY +4 V RL = 400 INCLUDES PROPAGATION DELAY CGA TE= 1500pF (IRCZ34)

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 9 MIC5021

4.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 4-1. TABLE 4-1: PIN FUNCTION TABLE Pin Number Pin Name Description 1 VDD Supply (+12V to 36V). Decouple with ≥ 10 µF capacitor. 2 INPUT TTL-Compatible Input. Logic high turns the external MOSFET on. An internal pull-down returns an open pin logic low. 3 CT Retry Timing Capacitor. Controls the off time (tG(OFF)) of the overcurrent retry cycle (duty cycle adjustment): Open = Approximately 20% duty cycle. Capacitor-to-Ground = Approximately 20% to <1% duty cycle. Pull-Up Resistor = Approximately 20% to approximately 75% duty cycle. Ground = Maintained shutdown upon overcurrent condition. 4 GND Circuit Ground.

5 SENSE+

Current-Sense Comparator (+) Input. Connect to high side of sense resistor or cur- rent sensing MOSFET sense lead. A built-in offset in conjunction with RSENSE sets the load overcurrent trip point. 6 SENSE– Current-Sense Comparator (–) Input. Connect to the low side of the sense resistor (usually the high side of the load). 7 GATE Gate Drive. Drives the gate of an external power MOSFET. Also limits VGS to 15V maximum to prevent gate-to-source damage. Will sink-and-source current.

8 VBOOST

Charge Pump Boost Capacitor. A bootstrap capacitor from VBOOST to the FET source pin supplies charge to quickly enhance the gate output during turn-on.

DS20005677B-page 10  2016 - 2021 Microchip Technology Inc. and its subsidiaries.

5.0 FUNCTIONAL DESCRIPTION

Refer to the MIC5021 .

5.1 Input

A signal greater than 1.4V (nominal) applied to the MIC5021 INPUT causes gate enhancement on an external MOSFET turning the MOSFET on. An internal pull-down resistor ensures that an open input remains low, keeping the external MOSFET turned off.

5.2 Gate Output

Rapid rise and fall times on the gate output are possible because each input state change triggers a one-shot which activates a high-value current sink (10I 2) for a short time. This draws a high current though a current mirror circuit causing the output transistors to quickly charge or discharge the external MOSFET’s gate. A second current sink continuously draws the lower value of current used to maintain the gate voltage for the selected state. An internal charge pump utilizes an external “boost” capacitor connected between V BOOST and the source of the external MOSFET (Refer to the Typical Applica- tion Circuit). The boost capacitor stores charge when the MOSFET is off. As the MOSFET turns on, its source to ground voltage increases and is added to the voltage across the capacitor, raising the V BOOST pin voltage. The boost capacitor charge is directed through the gate pin to quickly charge the MOSFET’s gate to 16V maximum above V DD. The internal charge pump maintains the gate voltage. An internal Zener diode protects the external MOSFET by limiting the gate to source voltage.

5.3 SENSE Inputs

The MIC5021’s 50 mV (nominal) trip voltage is created by internal current sources that force approximately 5 µA out of SENSE+ and approximately 15 µA (at trip) out of SENSE–. When SENSE– is 50mV or more below SENSE+, SENSE– steals base current from an internal drive transistor shutting off the external MOSFET.

5.4 Overcurrent Limiting

Current source I1 charges C INT upon power up. An optional external capacitor connected to CT is kept dis- charged through a MOSFET Q1. A fault condition (>50 mV from SENSE+ to SENSE–) causes the overcurrent comparator to enable current sink 2I 1 which overcomes current source I1 to dis - charge CINT in a short time. When CINT is discharged, the input is disabled, which turns off the gate output, and CINT and CT are ready to be charged. When the gate output turns the MOSFET off, the over- current signal is removed from the sense inputs which deactivates current sink 2I 1.This allows C INT and the optional capacitor connected to C T to recharge. A Schmitt trigger delays the retry while the capacitor(s) recharge. Retry delay is increased by connecting a capacitor to CT (optional). The retry cycle will continue until the fault is removed or the input is changed to TTL low. If CT is connected to ground, the circuit will not retry upon a fault condition.

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 11 MIC5021

6.0 APPLICATION INFORMATION

The MIC5021 MOSFET driver is intended for high-side switching applications where overcurrent limiting and high speed are required. The MIC5021 can control MOSFETs that switch voltages up to 36V.

6.1 High-Side Switch Circuit

High-side switching allows more of the load related components and wiring to remain near ground potential when compared to low-side switching. This reduces the chances of short-to-ground accidents or failures.

6.2 Speed Advantage

The MIC5021 is about two orders of magnitude faster than the low cost MIC5014 making it suitable for high-frequency high-efficiency circuit operation in PWM (pulse width modulation) designs used for motor con - trol, SMPS (switch-mode power supply) and heating element control. Switched loads (on/off) benefit from the MIC5021’s fast switching times by allowing use of MOSFETs with smaller safe operating areas. Larger MOSFETs are often required when using slower drivers.

6.3 Supply Voltage

The MIC5021’s supply input (V DD) is rated up to 36V. The supply voltage must be equal to or greater than the voltage applied to the drain of the external N-channel MOSFET. A 16V minimum supply is recommended to produce continuous on-state, gate drive voltage for standard MOSFETs (10V nominal gate enhancement). When the driver is powered from a 12V to 16V supply, a logic-level MOSFET is recommended (5V nominal gate enhancement). PWM operation may produce satisfactory gate enhancement at lower supply voltages. This occurs when fast switching repetition makes the boost capac- itor a more significant voltage supply than the internal charge pump.

6.4 Logic-Level MOSFET Precautions

Logic-level MOSFETs have lower maximum gate-to-source voltage ratings (typically ±10V) than standard MOSFETs (typically ±20V). When an external MOSFET is turned on, the doubling effect of the boost capacitor can cause the gate-to-source voltage to momentarily exceed 10V. Internal zener diodes clamp this voltage to 16V maximum which is too high for logic-level MOSFETs. To protect logic-level MOSFETs, connect a zener diode (5V ≤ VZENER < 10V) from gate to source.

6.5 Overcurrent Limiting

A 50 mV comparator is provided for current sensing. The low level trip point minimizes I 2R losses when a power resistor is used for current sensing. The adjustable retry feature can be used to handle loads with high initial currents, such as lamps or heat - ing elements, and can be adjusted from the CT connec- tion. CT to ground maintains gate drive shutdown following an overcurrent condition. CT open, or a capacitor to ground, causes automatic retry. The default duty cycle (CT open) is approximately 20%. Refer to the Electrical Characteristics when selecting a capacitor for reduced duty cycle. CT through a pull-up resistor to VDD increases the duty cycle. Increasing the duty cycle increases the power dissipation in the load and MOSFET under a fault con- dition. Circuits may become unstable at a duty cycle of about 75% or higher, depending on conditions. Cau - tion: The MIC5021 may be damaged if the voltage applied to CT exceeds the absolute maximum voltage rating.

6.6 Boost Capacitor Selection

The boost capacitor value will vary depending on the supply voltage range. A 0.01 µF boost capacitor is recommended for best performance in the 12V to 20V range. (See Figure 6-1.) Larger capacitors may damage the MIC5021. FIGURE 6-1: 12V to 20V Configuration. If the full 12V to 36V voltage range is required, the boost capacitor value must be reduced to 2.7 nF (Figure 6-2). The recommended configuration for the 20V to 36V range is to place the capacitor is placed between VDD and VBOOST as shown in Figure 6-3. V DD Input C T Gnd V BOOST Gate Sense- Sense+ TTL Input +12V to +20V MIC5021 10μF 0.01 μF Load

DS20005677B-page 12  2016 - 2021 Microchip Technology Inc. and its subsidiaries. FIGURE 6-2: 12V to 36V Configuration. FIGURE 6-3: Preferred 20V to 36V Configuration. Do not use both boost capacitors between VBOOST and the MOSFET source and VBOOST and VDD at the same time.

6.7 Current-Sense Resistors

Lead length can be significant when using low value (<1Ω) resistors for current sensing. Errors caused by lead length can be avoided by using four-terminal cur - rent-sensing resistors. Four-terminal resistors are available from several manufacturers.

6.8 Circuits without Current Sensing

Current sensing may be omitted by connecting the SENSE+ and SENSE– pins to the source of the MOS- FET or to the supply. Connecting the sense pins to the supply is preferred for inductive loads. Do not connect the sense pins to ground. FIGURE 6-4: Connecting Sense to Source. FIGURE 6-5: Connecting Sense to Supply.

6.9 Inductive Load Precautions

Circuits controlling inductive loads, such as solenoids (Figure 6-6) and motors, require precautions when controlled by the MIC5021. Wire wound resistors, which are sometimes used to simulate other loads, can also show significant inductive properties. An inductive load releases stored energy when its cur- rent flow is interrupted (when the MOSFET is switched off). The voltage across the inductor reverses and the inductor attempts to force current flow. Since the circuit appears open (the MOSFET appears as a very high resistance) a very large negative voltage occurs across the inductor. V DD Input C T Gnd V BOOST Gate Sense- Sense+ TTL Input +20V to +36V MIC5021 10μF 2.7 nF Load V DD Input C T Gnd V BOOST Gate Sense- Sense+ TTL Input +20V to +36V MIC5021 10μF Load 0.01 μF V DD Input C T Gnd V BOOST Gate Sense- Sense+ TTL Input Load N-Channel Power MOSFET MIC5021 10μF 0.01 μF V DD INPUT C T GND V BOOST GATE SENSE- SENSE+ TTL INPUT LOAD N-CHANNEL POWER MOSFET MIC5021 10μF 0.01 μF

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 13 MIC5021 FIGURE 6-6: Solenoid Driver with Current Sensing.

6.9.1 LIMITING INDUCTIVE SPIKES

The voltage across the inductor can be limited by con- necting a Schottky diode across the load. The diode is forward biased only when the load is switched off. The Schottky diode clamps negative transients to a few volts. This protects the MOSFET from drain-to-source breakdown and prevents the transient from damaging the charge pump by way of the boost capacitor (see Sense Pin Considerations). The diode should have a peak forward current rating greater than the load current. This is because the cur - rent through the diode is the same as the load current at the instant the MOSFET is turned off.

6.9.2 SENSE PIN CONSIDERATIONS

The sense pins of the MIC5021 are sensitive to nega - tive voltages. Forcing the sense pins much below –0.5V effectively reverses the supply voltage on por - tions of the driver resulting in unpredictable operation or damage. Figure 6-7 shows current flowing out of the sense leads of an MIC5021 during a negative transient (inductive kick). Internal Schottky diodes attempt to limit the neg- ative transient by maintaining a low forward drop. FIGURE 6-7: Inductive Load Turn-Off. Although the internal Schottky diodes can protect the driver in low-current resistive applications, they are inadequate for inductive loads or the lead inductance in high-current resistive loads. Because of their small size, the diodes’ forward voltage drop quickly exceeds 0.5V as current increases.

6.9.3 EXTERNAL PROTECTION

Resistors placed in series with each SENSE connec - tion limit the current drawn from the internal Schottky diodes during a negative transient. This minimizes the forward drop across the diodes. During normal operation, sensing current from the sense pins is unequal (5 µA and 15 µA). The internal Schottky diodes are reverse-biased and have no effect. To avoid skewing the trip voltage, the current limiting resistors must drop equal voltages at the trip point cur- rents (see Figure 6-8). To minimize resistor tolerance error, use a voltage drop lower than the trip voltage of 50 mV. 5 mV is suggested. FIGURE 6-8: Resistor Voltage Drop. VDD INPUT C T GND V BOOST GATE SENSE- SENSE+ TTL INPUT RSENSE N-CHANNEL POWER MOSFET (IRF540) +20V TO +36VMIC5021 10μF SOLENOID (24V, 47Ω) 0.01 μF SCHOTTKY DIODE (1N5822) (+24V) (<0.08Ω) MOSFET TURN-OFF NEGATIVE SPIKE ~VDD VDD INPUT CT GATE MIC5021 INDUCTIVE LOAD FORWARD DROP ACROSS DIODES ALLOWS LEADS TO GO NEGATIVE CURRENT FLOWS FROM GROUND (0V) THROUGH THE DIODES TO THE LOAD DURING NEGATIVE TRANSCIENTS. V DD INPUT C T GND V BOOST GATE SENSE- SENSE+ N-CHANNEL POWER MOSFET MIC5021 RS LOAD 5μA 15μA VR2 VR1 =V R2 TO AVOID SKEWING THE 50mV TRIP POINT. (5mV SUGGESTED) R1 3 × R2 VR1 50mV NOMINAL (@ TRIP)

DS20005677B-page 14  2016 - 2021 Microchip Technology Inc. and its subsidiaries. External Schottky diodes are also recommended (see D2 and D3 in Figure 6-9). The external diodes clamp negative transients better than the internal diodes because their larger size minimizes the forward voltage drop at higher currents. FIGURE 6-9: Protection from Inductive Kick.

6.9.4 HIGH-SIDE SENSING

Sensing the current on the high side of the MOSFET isolates the sense pins from the inductive spike. FIGURE 6-10: High-Side Sensing.

6.10 Lamp Driver Application

Incandescent lamps have a high inrush current (low resistance) when turned on. The MIC5021 can perform a “soft start” by pulsing the MOSFET (overcurrent con- dition) until the filament is warm and its current decreases (resistance increases). The sense resistor value is selected so the voltage drop across the sense resistor decreases below the sense threshold (50 mV) as the filament becomes warm. The FET is no longer pulsed and the lamp turns completely on. A lamp may not fully turn on if the filament does not heat up adequately. Changing the duty cycle, sense resistor, or both to match the filament characteristics can correct the problem. Soft start can be demonstrated using a #1157 dual fila- ment automotive lamp. The value of RS shown in Figure 6-11 allows for soft start of the higher-resistance filament (measures approx. 2.1Ω cold or 21Ω hot). FIGURE 6-11: Lamp Driver with Current Sensing.

6.11 Remote Overcurrent Limiting

In circuit breaker applications where the MIC5021 maintains an off condition after an overcurrent condi - tion is sensed, the C T pin can be used to reset the MIC5021. FIGURE 6-12: Remote Control Circuit. Switching Q1 on pulls CT low which keeps the MIC5021 gate output off when an overcurrent is sensed. Switch- ing Q1 off causes C T to appear open. The MIC5021 retries in about 20 µs and continues to retry until the overcurrent condition is removed. For demonstration purposes, a 680Ω load resistor and 3Ω sense resistor will produce an overcurrent condition when the load’s supply (V+) is approximately 12V or greater. V DD INPUT C T GND V BOOST GATE SENSE- SENSE+ TTL INPUT INDUCTIVE LOAD N-CHANNEL POWER MOSFET +12V TO +36VMIC5021 10μF 2.7 nF RSENSE 1.0k 330Ω 11DQ03 11DQ03 VDD INPUT C T GND V BOOST GATE SENSE- SENSE+ TTL INPUT WIREWOUND RESISTOR (3Ω) N-CHANNEL POWER MOSFET (IRFZ44) +12V TO +20V RSENSE (< 0.01Ω) (+12V) MIC5021 10μF 0.01 μF VDD INPUT CT GND V BOOST GATE SENSE- SENSE+ TTL INPUT RSENSE (0.041Ω) N-CHANNEL POWER MOSFET (IRF540) MIC5021 10μF 0.01 μF INCANDESCENT LAMP (#1157) (+12V) "( )" VALUES APPLY TO DEMO CIRCUIT. SEE TEXT. VDD INPUT C T GND VBOOST GATE SENSE- SENSE+ TTL INPUT RSENSE N-CHANNEL POWER MOSFET +12V TO +20V MIC5021 10μF 0.01 μF LOAD 74HC04 (EXAMPLE) 2N3904 10k TO 100k RETRY (H) MAINTAINED (L)

DS20005677B-page 16  2016 - 2021 Microchip Technology Inc. and its subsidiaries.

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

8-Lead SOIC* 8-Lead PDIP* MIC XXXXXX WNNN MIC 5021YM 4822 Legend: XX...X Product code or customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC ® designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package.

  • , ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available charac - ters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar (‾) symbol may not be to scale.

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 17 MIC5021 8-Lead PDIP Package Outline & Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.

DS20005677B-page 18  2016 - 2021 Microchip Technology Inc. and its subsidiaries. 8-Lead SOICN Package Outline & Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 19 MIC5021 APPENDIX A: REVISION HISTORY Revision A (December 2016)

  • Converted Micrel document MIC5021 to Micro- chip data sheet template DS20005677A.
  • Minor grammatical text changes throughout. Revision B (December 2021)
  • Corrected Section 7.1 “Package Marking Infor- mation” device marking specification.

DS20005677B-page 20  2016 - 2021 Microchip Technology Inc. and its subsidiaries. NOTES:

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 21 MIC5021 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. Examples: a) MIC5021YM: High-Speed, High-Side MOSFET Driver with Charge Pump and Over- current Limit, –40°C to +85°C (RoHS Compliant), 8LD SOIC b) MIC5021YN: High-Speed, High-Side MOSFET Driver with Charge Pump and Over - current Limit, –40°C to +85°C (RoHS Compliant), 8LD Plastic DIP PART NO. X XX PackageTemperature Range Device Device: MIC5021: High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit Temperature Range: Y = –40 C to +85C (RoHS Compliant) Packages: M = 8-Pin SOIC N = 8-Pin Plastic DIP Note 1: Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option.

DS20005677B-page 22  2016 - 2021 Microchip Technology Inc. and its subsidiaries. NOTES:

 2016 - 2021 Microchip Technology Inc. and its subsidiaries. DS20005677B-page 23 This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this informa- tion in any other manner violates these terms. Information regarding device applications is provided only for your conve- nience and may be superseded by updates. It is your responsi- bility to ensure that your application meets with your specifications. Contact your local Microchip sales office for additional support or, obtain additional support at https:// www.microchip.com/en-us/support/design-help/client-support- services. THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS". MICROCHIP MAKES NO REPRESENTATIONS OR WAR- RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF NON- INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A PARTICULAR PURPOSE, OR WARRANTIES RELATED TO ITS CONDITION, QUALITY, OR PERFORMANCE. IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDI- RECT, SPECIAL, PUNITIVE, INCIDENTAL, OR CONSE - QUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY KIND WHATSOEVER RELATED TO THE INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY , THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THE INFORMATION. Use of Microchip devices in life support and/or safety applica- tions is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AgileSwitch, APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet- Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, TrueTime, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP , INICnet, Intelligent Paralleling, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP , SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY , Total Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY , ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, Symmcom, and Trusted Time are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2016 - 2021, Microchip Technology Incorporated and its subsidiar- ies. All Rights Reserved. ISBN: 978-1-5224-9337-2 Note the following details of the code protection feature on Microchip products:

  • Microchip products meet the specifications contained in their particular Microchip Data Sheet.
  • Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and under normal conditions.
  • Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act.
  • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to continuously improving the code protection features of our products. For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality.

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