MIC5018 MICREL | Alldatasheet

Document overview

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Technical content

Features

  • +2.7V to +9V operation
  • 150µA typical supply current at 5V supply
  • ≤ 1µA typical standby (off) current
  • Charge pump for high-side low-voltage applications
  • Internal zener diode gate-to-ground MOSFET protection
  • Operates in low- and high-side configurations
  • TTL compatible input
  • ESD protected

Applications

  • Battery conservation
  • Power bus switching
  • Solenoid and motion control
  • Lamp control

Ordering Information

Part Number Temp. Range Package Marking MIC5018BM4 –40 °C to +85°C SOT-143 H10 On Off VS CTL G GND MIC50184.7µF IRFZ24* N-Channel MOSFET +5V Load* International Rectifier 100m Ω , 17A max. TO-220 package Low-Voltage High-Side Power Switch On Off VS CTL G GND MIC50184.7µF Si9410DY* N-channel MOSFET VLOAD SUPPLY ‡ Load+2.7 to +9V ‡ Load voltage limited only by MOSFET drain-to-source rating * Siliconix 30m Ω , 7A max., 30V VDS max. 8-lead SOIC package Low-Side Power Switch

SOT-143 (M4) Pin Description Pin Number Pin Name Pin Function 1 GND Ground: Power return. 2 VS Supply (Input): +2.7V to +9V supply. 3 G Gate (Output): Gate connection to external MOSFET. 4 CTL Control (Input): TTL compatible on/off control input. Logic high drives the gate output above the supply voltage. Logic low forces the gate output near ground. Early production identification: MH10

Electrical Characteristics

Parameter Condition (Note 1) Min Typ Max Units Supply Current V SUPPLY = 3.3V V CTL = 0V 0.01 1 µA VCTL = 3.3V 70 140 µA VSUPPLY = 5V V CTL = 0V 0 1 µA VCTL = 5V 150 300 µA Control Input Voltage 2.7V ≤ VSUPPLY ≤ 9V V CTL for logic 0 input 0 0.8 V 2.7V ≤ VSUPPLY ≤ 5V V CTL for logic 1 input 2.0 V SUPPLY V 5V ≤ VSUPPLY ≤ 9V V CTL for logic 1 input 2.4 V SUPPLY V Control Input Current 2.7V ≤ VSUPPLY ≤ 9V 0.01 1 µA Control Input Capacitance Note 2 5p F Zener Diode Output Clamp V SUPPLY = 9V 13 16 19 V Gate Output Voltage V SUPPLY = 2.7V 6.3 7.1 V VSUPPLY = 3.0V 7.1 8.2 V VSUPPLY = 4.5V 11.4 13.4 V Gate Output Current V SUPPLY = 5V V OUT = 10V, Note 3 9.5 µA Gate Turn-On Time V SUPPLY = 4.5V C L = 1000pF, Note 4 0.75 1.5 ms C L = 3000pF, Note 4 2.1 4.2 ms Gate Turn-Off Time V SUPPLY = 4.5V C L = 1000pF, Note 5 10 20 µs C L = 3000pF, Note 5 30 60 µs General Note: Devices are ESD protected, however handling precautions are recommended. Note 1: Typical values at TA = 25°C. Minimum and maximum values indicate performance at –40°C ≥ TA ≥ +85°C. Parts production tested at 25°C. Note 2: Guaranteed by design. Note 3: Resistive load selected for VOUT = 10V. Note 4: Turn-on time is the time required for gate voltage to rise to 4V greater than the supply voltage. This represents a typical MOSFET gate threshold voltage. Note 5: Turn-off time is the time required for the gate voltage to fall to 4V above the supply voltage. This represents a typical MOSFET gate threshold voltage. Test Circuit VS CTL G GND MIC5018 VSUPPLY

4 C L

0.1µF Absolute Maximum Ratings Package Thermal Resistance

Typical Characteristics Note 4 0.2 0.4 0.6 0.8 1.0 02468 1 0 SUPPLY CURRENT (mA) SUPPLY VOLTAGE (V) Supply Current vs. Supply Voltage -40°C 125°C 25°C 120 160 02468 1 0 1 2 1 4 1 6 OUTPUT CURRENT ( µA) OUTPUT VOLTAGE (V) Gate Output Current vs. Output Voltage VSUPPLY = 9V 0 1000 2000 3000 4000 5000 TURN-OFF TIME (µs) CAPACITANCE (pF) Full Turn-Off Time vs. Load Capacitance VSUPPLY = 3V Note 6 Note 4: TA = 25°C, VSUPPLY = 5V unless noted. Note 5: Full turn-on time is the time between VCTL rising to 2.5V and the VG rising to 90% of its steady on-state value. Note 6: Full turn-off time is the time between VCTL falling to 0.5V and the VG falling to 10% of its steady on-state value. 0 1000 2000 3000 4000 5000 TURN-ON TIME (ms) CAPACITANCE (pF) Full Turn-On Time vs. Load Capacitance VSUPPLY = 3V Note 5 02468 1 0 OUTPUT VOLTAGE (V) SUPPLY VOLTAGE (V) Gate Output Voltage vs. Supply Voltage 25°C-40°C 125°C 100 120 02468 1 0 1 2 1 4 1 6 OUTPUT CURRENT ( µA) OUTPUT VOLTAGE (V) Gate Output Current vs. Output Voltage TA = -55°C 25°C 125°C

Refer to the functional diagram. The MIC5018 is a noninverting device. Applying a logic high signal to CTL (control input) produces gate drive output. The G (gate) output is used to turn on an external N-channel MOSFET. Supply VS (supply) is rated for +2.7V to +9V. An external capacitor is recommended to decouple noise. Control CTL (control) is a TTL compatible input. CTL must be forced high or low by an external signal. A floating input may cause unpredictable operation. A high input turns on Q2, which sinks the output of current source I1, making the input of the first inverter low. The inverter output becomes high enabling the charge pump. Charge Pump The charge pump is enabled when CTL is logic high. The charge pump consists of an oscillator and voltage quadrupler Functional Diagram CHARGE PUMP EN VS CTL 15k R1 2k GND G MIC5018 +2.7V to +9V Load On Off 20µA 16V 35V D3 16V Functional Diagram with External Components (High-Side Driver Configuration) (4×). Output voltage is limited to 16V by a zener diode. The charge pump output voltage will be approximately: VG = 4 × VSUPPLY – 2.8V, but not exceeding 16V. The oscillator operates from approximately 70kHz to approxi- mately 100kHz depending upon the supply voltage and temperature. Gate Output The charge pump output is connected directly to the G (gate) output. The charge pump is active only when CTL is high. When CTL is low, Q3 is turned on by the second inverter and discharges the gate of the external MOSFET to force it off. If CTL is high, and the voltage applied to VS drops to zero, the gate output will be floating (unpredictable). ESD Protection D1 and D2 clamp positive and negative ESD voltages. R1 isolates the gate of Q2 from sudden changes on the CTL input. Q1 turns on if the emitter (CTL input) is forced below ground to provide additional input protection. Zener D3 also clamps ESD voltages for the gate (G) output.