MIC5016_02 MICREL | Alldatasheet

Document overview

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Technical content

Features

  • 2.75V to 30V operation
  • 100µA maximum supply current (5V supply)
  • 1 5µA typical off-state current
  • Internal charge pump
  • TTL compatible input
  • Withstands 60V transient (load dump)
  • Reverse battery protected to –20V
  • Inductive spike protected to –20V
  • Overvoltage shutdown at 35V
  • Internal 15V gate protection
  • Minimum external parts
  • Operates in high-side or low-side configurations
  • 1 µA control input pull-off
  • Inverting and noninverting versions

Applications

  • Automotive electrical load control
  • Battery-powered computer power management
  • Lamp control
  • Heater control
  • Motor control
  • Power bus switching

Ordering Information

Part Number Temperature Range Package Noninverting MIC5016BWM –40 °C to +85°C 16-pin Wide SOIC MIC5016BN –40 °C to +85°C 14-pin Plastic DIP Inverting MIC5017BWM –40 °C to +85°C 16-pin Wide SOIC MIC5017BN –40 °C to +85°C 14-pin Plastic DIP MIC5016/5017 Low-Cost Dual High- or Low-Side MOSFET Driver Final Information Typical Application Figure 1: 3-Volt “Sleep-Mode” Switches with Logic-Level MOSFETs OFF ON MIC5016BN IRLZ24 +3V to +4V Gate A Source B Gnd In A V+ B V+ A Source A Gate B 10µF In B Back Light IRLZ24 Logic OFF ON General Description MIC5016 and MIC5017 dual MOSFET drivers are designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V to 30V supply. In high- side configurations, the driver can control MOSFETs that switch loads of up to 30V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET. The MIC5016/7 has two TTL compatible control inputs. The MIC5016 is noninverting while the MIC5017 is inverting. The MIC5016/7 features internal charge pumps that can sustain gate voltages greater than the available supply voltage. The driver is capable of turning on logic-level MOSFETs from a 2.75V supply or standard MOSFETs from a 5V supply. Gate-to-source output voltages are internally limited to approximately 15V. The MIC5016/7 is protected against automotive load dump, reversed battery, and inductive load spikes of –20V. The driver’s overvoltage shutdown feature turns off the external MOSFETs at approximately 35V to protect the load against power supply excursions. The MIC5016 is an improved pin-for-pin compatible replace- ment in many MIC5012 applications. The MIC5016/7 is available in plastic 14-pin DIP and 16-pin SOIC pacakges. Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com

MIC5016/5017 2 October 1998 Block Diagram 1 of 2 Drivers per Package Charge Pump Input Ground Source Gate 15V * Inverting version only Connection Diagram 16-pin Wide SOIC14-pin DIP NC Source A Gnd Gate A Source B Gate B NC NC NC V+ B In B V+ A NC In A N, J NC Source A Gnd Gate A Source B Gate B NC NC NC NC NC V+ B In B V+ A NC In A WM Pin Description Pin Number Pin Number Pin Name Pin Function 12 14 V +A Supply Pin A. Must be decoupled to isolate large transients caused by power MOSFET drain. 10µF is recommended close to pins 12 and/or 10 and ground. V+A and V+B may be connected to separate supplies. 10 12 V +B Supply Pin B. See V +A. 14 16 Input A Turns on power MOSFET A when asserted. Requires approximately 1 µA to switch. 11 13 Input B Turns on power MOSFET B. See Input A. 4 4 Gate A Drives and clamps the gate of power MOSFET A 6 6 Gate B Drives and clamps the gate of power MOSFET B 2 2 Source A Connects the source lead of MOSFET A 5 5 Source B Connects the source lead of MOSFET B 3 3 Gnd Ground

October 1998 3 MIC5016/5017 Parameter Conditions Min Typ Max Units Supply Current V + = 30V V IN De-Asserted (Note 5) 10 25 µA (Each Driver Channel) V IN Asserted (Note 5) 5.0 10 mA V+ = 5V V IN De-Asserted 10 25 µA VIN Asserted 60 100 V+ = 3V V IN De-Asserted 10 25 µA VIN Asserted 25 35 Logic Input Voltage Threshold 3.0V ≤ V+ ≤ 30V Digital Low Level 0.8 VIN TA = 25°C Digital High Level 2.0 V Logic Input Current 3.0V ≤ V+ ≤ 30V V IN Low –2.0 0 µAMIC5016 (non-inverting) V IN High 1.0 2.0 Input Capacitance 5.0 pF Gate Enhancement 3.0V ≤ V+ ≤ 30V V IN Asserted 4.0 17 V VGATE - VSUPPLY Zener Clamp 8.0V ≤ V+ ≤ 30V V IN Asserted 13 15 17 V VGATE - VSOURCE Gate Turn-on Time, tON V+ = 4.5V V IN switched on, measure 2.5 8.0 ms (Note 4) C L = 1000pF time for VGATE to reach V+ + 4V V+ = 12V As above, measure time for 90 140 µs C L = 1000pF V GATE to reach V+ + 4V Gate Turn-off Time, tOFF V+ = 4.5V V IN switched off, measure 6.0 30 µs (Note 4) C L = 1000pF time for VGATE to reach 1V V+ = 12V As above, measure time for 6.0 30 µs C L = 1000pF V GATE to reach 1V Overvoltage Shutdown 35 37 41 V Threshold Electrical Characteristics (Note 3) TA = –55°C to +125°C unless otherwise specified Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified Operating Ratings. Note 2:The MIC5016/5017 is ESD sensitive. Note 3:Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm. Note 4:Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster— see Applications Information. Maximum value of switching time seen at 125°C, unit operated at room temperature will reflect the typical value shown. Note 5:“Asserted” refers to a logic high on the MIC5016 and a logic low on the MIC5017. Absolute Maximum Ratings (Notes 1,2) Operating Ratings (Notes 1,2) (max soldering time: 10 seconds)

MIC5016/5017 4 October 1998 Typical Characteristics All data measured using FET probe to minimize resistive loading 0 5 10 15 20 25 30 SUPPLY CURRENT (mA) SUPPLY VOLTAGE (V) Supply Current per Channel (Output Asserted) 0 5 10 15 20 25 30 GATE ENHANCEMENT (V) SUPPLY VOLTAGE (V) Gate Enhancement vs. Supply Voltage Gate Enhancement = VGATE – VSUPPLY 100 150 200 250 300 02468 1 0 TURN-ON TIME (µs) GATE CAPACITANCE (nF) High-Side Turn-On Time vs. Gate Capacitance Supply = 12V 0.01 0.1 100 0 4 8 12 16 20 24 28 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 4V C GATE = 1300pF 0.01 0.1 100 0 4 8 12 16 20 24 28 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 4V C GATE = 3000pF 100 120 140 160 180 -60 -30 0 30 60 90 120 150 HIGH-SIDE TURN-ON TIME (µs) AMBIENT TEMPERATURE ( °C) High-Side Turn-On Time vs. Temperature Supply = 12V C GATE = 1000pF 0.01 0.1 100 0 5 10 15 20 25 30 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 10V C GATE = 1300pF 0.01 0.1 100 0 5 10 15 20 25 30 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 10V C GATE = 3000pF 0 5 10 15 20 25 30 TURN-OFF TIME (µs) SUPPLY VOLTAGE (V) High-Side Turn-Off Time Until Gate = 1V C GATE = 3000pF C GATE = 1300pF 100 1000 0 5 10 15 OUTPUT CURRENT ( µA) GATE-TO-SOURCE VOLTAGE (V) Charge-Pump Output Current Source connected to supply: supply voltage as noted 12V 28V 100 1000 10000 0 5 10 15 OUTPUT CURRENT ( µA) GATE-TO-SOURCE VOLTAGE (V) Charge-Pump Output Current Source connected to ground: supply voltage as noted 12V 28V 100 1000 10000 0 5 10 15 20 25 30 TURN-ON TIME (µs) SUPPLY VOLTAGE (V) Low-Side Turn-On Time Until Gate = 4V C GATE = 3000pF C GATE = 1300pF

and the MIC5017 is an inverting configuration of the MIC5016. 15µA typical, which is necessary to power an internal bandgap. turns on, allowing the gate of the power FET to be charged. enough. This is a feature not found on the MIC5012. rating of the power MOSFET at high supply voltages. turns off the device when the supply reaches 35V. tributing excess drop under load. buffer be used for all testing. be driven using these devices. ably by bootstrapping the supply. source pin can be pulled 20V below ground with no effect. in which a transient may exceed the overvoltage trip point. voltages above 4V are required. Figure 2. Low Side Driver

MIC5016/5017 10 October 1998

Package Information

.080 (1.524) .015 (0.381) .023 (.5842) .015 (.3810) .310 (7.874) .280 (7.112) .770 (19.558) MAX .235 (5.969) .215 (5.461) .060 (1.524) .045 (1.143) .160 MAX .330 (8.362) .015 (0.381) .008 (0.2032) .060 (1.524) .045 (1.143) PIN 1 14-Pin Plastic DIP (N) 0.022 (0.559) 0.018 (0.457) TYP 0.408 (10.363) 0.404 (10.262) 0.409 (10.389) 0.405 (10.287) 0.103 (2.616) 0.099 (2.515) SEATING PLANE 0.027 (0.686) TYP 0.301 (7.645) 0.297 (7.544) 0.094 (2.388) 0.090 (2.286) 0.297 (7.544) 0.293 (7.442)10° TYP 0.032 (0.813) TYP 0.330 (8.382) 0.326 (8.280) TYP 0.050 (1.270) TYP 0.015 (0.381)R 0.015 (0.381) MIN PIN 1 DIMENSIONS: INCHES (MM) 16-Pin Wide SOP (M)

October 1998 11 MIC5016/5017

MIC5016/5017 12 October 1998 MICREL INC. 1849 FORTUNE DRIVE SAN JOSE, CA 95131 USA TEL + 1 (408) 944-0800 FAX + 1 (408) 944-0970 WEB http://www.micrel.com This information is believed to be accurate and reliable, however no responsibility is assumed by Micrel for its use nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent right of Micrel Inc. © 1998 Micrel Incorporated