MIC5014 MICREL | Alldatasheet

Document overview

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Technical content

Features

  • 2.75V to 30V operation
  • 100µA maximum supply current (5V supply)
  • 1 5µA typical off-state current
  • Internal charge pump
  • TTL compatible input
  • Withstands 60V transient (load dump)
  • Reverse battery protected to –20V
  • Inductive spike protected to –20V
  • Overvoltage shutdown at 35V
  • Internal 15V gate protection
  • Minimum external parts
  • Operates in high-side or low-side configurations
  • 1 µA control input pull-off
  • Inverting and noninverting versions

Applications

  • Automotive electrical load control
  • Battery-powered computer power management
  • Lamp control
  • Heater control
  • Motor control
  • Power bus switching

Ordering Information

Part Number Temperature Range Package Noninverting MIC5014BM –40 °C to +85°C 8-pin SOIC MIC5014BN –40 °C to +85°C 8-pin Plastic DIP Inverting MIC5015BM –40 °C to +85°C 8-pin SOIC MIC5015BN –40 °C to +85°C 8-pin Plastic DIP General Description MIC5014 and MIC5015 MOSFET drivers are designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5014/5 can sustain an on-state output indefinitely. The MIC5014/5 operates from a 2.75V to 30V supply. In high- side configurations, the driver can control MOSFETs that switch loads of up to 30V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET. The MIC5014/5 has a TTL compatible control input. The MIC5014 is noninverting while the MIC5015 is inverting. The MIC5014/5 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75V supply or a standard MOSFET from a 5V supply. The gate-to-source output voltage is internally limited to approximately 15V. The MIC5014/5 is protected against automotive load dump, reversed battery, and inductive load spikes of –20V. The driver’s overvoltage shutdown feature turns off the external MOSFET at approximately 35V to protect the load against power supply excursions. The MIC5014 is an improved pin-for-pin compatible replace- ment in many MIC5011 applications. The MIC5014/5 is available in plastic 8-pin DIP and 8-pin SOIC pacakges. MIC5014/5015 Low-Cost High- or Low-Side MOSFET Driver Load MIC5014 Control Input OFF ON

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+3V to +4V NC GateGnd Source Input NC NC 10µF Figure 1. 3V “Sleep-Mode” Switch

V+ (1) *Input (2) Ground (4) Source (3) Gate (5) 15V * Only on the inverting version Pin Description Pin Number Pin Name Pin Function 1 V+ Supply. Must be decoupled to isolate from large transients caused by the power MOSFET drain. 10µF is recommended close to pins 1 and 4. 2 Input Turns on power MOSFET when taken above (or below) threshold (1.0V typical). Pin 2 requires ~ 1µA to switch.

3 Source Connects to source lead of power MOSFET and is the return for the gate

clamp zener. Pin 3 can safely swing to –20V when turning off inductive loads.

4 Ground

5 Gate Drives and clamps the gate of the power MOSFET. 6, 7, 8 NC Not internally connected.

Absolute Maximum Ratings (Notes 1,2) Operating Ratings (Notes 1,2) Electrical Characteristics (Note 3) TA = –55°C to +125°C unless otherwise specified (max soldering time: 10 seconds) Parameter Conditions Min Typ Max Units Supply Current V + = 30V V IN De-Asserted (Note 5) 10 25 µA VIN Asserted (Note 5) 5.0 10 mA V+ = 5V V IN De-Asserted 10 25 µA VIN Asserted 60 100 V+ = 3V V IN De-Asserted 10 25 µA VIN Asserted 25 35 Logic Input Voltage Threshold 3.0V ≤ V+ ≤ 30V Digital Low Level 0.8 VIN TA = 25°C Digital High Level 2.0 V Logic Input Current 3.0V ≤ V+ ≤ 30V V IN Low –2.0 0 µAMIC5014 (non-inverting) V IN High 1.0 2.0 Input Capacitance 5.0 pF Gate Enhancement 3.0V ≤ V+ ≤ 30V V IN Asserted 4.0 17 V VGATE – VSUPPLY Zener Clamp 8.0V ≤ V+ ≤ 30V V IN Asserted 13 15 17 V VGATE – VSOURCE Gate Turn-on Time, tON V+ = 4.5V V IN switched on, measure 2.5 8.0 ms (Note 4) C L = 1000pF time for VGATE to reach V+ + 4V V+ = 12V As above, measure time for 90 140 µs C L = 1000pF V GATE to reach V+ + 4V Gate Turn-off Time, tOFF V+ = 4.5V V IN switched off, measure 6.0 30 µs (Note 4) C L = 1000pF time for VGATE to reach 1V V+ = 12V As above, measure time for 6.0 30 µs C L = 1000pF V GATE to reach 1V Overvoltage Shutdown 35 37 41 V Threshold Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified Operating Ratings. Note 2:The MIC5014/5015 is ESD sensitive. Note 3:Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm. Note 4:Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see Applications Information. Maximum value of switching time seen at 125°C, unit operated at room temperature will reflect the typical value shown. Note 5:“Asserted” refers to a logic high on the MIC5014 and a logic low on the MIC5015.

Typical Characteristics All data measured using FET probe to minimize resistive loading 0 5 10 15 20 25 30 SUPPLY CURRENT (mA) SUPPLY VOLTAGE (V) Supply Current (Output Asserted) 0 5 10 15 20 25 30 GATE ENHANCEMENT (V) SUPPLY VOLTAGE (V) Gate Enhancement vs. Supply Voltage Gate Enhancement = V GATE – VSUPPLY 100 150 200 250 300 02468 1 0 TURN-ON TIME (µs) GATE CAPACITANCE (nF) High-Side Turn-On Time vs. Gate Capacitance Supply = 12V 0.01 0.1 100 0 4 8 12 16 20 24 28 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 4V C GATE = 1300pF 0.01 0.1 100 0 4 8 12 16 20 24 28 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 4V C GATE = 3000pF 100 120 140 160 180 -60 -30 0 30 60 90 120 150 HIGH-SIDE TURN-ON TIME (µs) AMBIENT TEMPERATURE ( °C) High-Side Turn-On Time vs. Temperature Supply = 12V C GATE = 1000pF 0.01 0.1 100 0 5 10 15 20 25 30 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 10V C GATE = 1300pF 0.01 0.1 100 0 5 10 15 20 25 30 TURN-ON TIME (ms) SUPPLY VOLTAGE (V) High-Side Turn-On Time Until Gate = Supply + 10V C GATE = 3000pF 0 5 10 15 20 25 30 TURN-OFF TIME (µs) SUPPLY VOLTAGE (V) High-Side Turn-Off Time Until Gate = 1V C GATE = 3000pF C GATE = 1300pF 100 1000 0 5 10 15 OUTPUT CURRENT ( µA) GATE-TO-SOURCE VOLTAGE (V) Charge-Pump Output Current Source connected to supply: supply voltage as noted 12V 28V 100 1000 10000 0 5 10 15 OUTPUT CURRENT ( µA) GATE-TO-SOURCE VOLTAGE (V) Charge-Pump Output Current Source connected to ground: supply voltage as noted 12V 28V 100 1000 10000 0 5 10 15 20 25 30 TURN-ON TIME (µs) SUPPLY VOLTAGE (V) Low-Side Turn-On Time Until Gate = 4V C GATE = 3000pF C GATE = 1300pF

Figure 2. Low Side Driver type package, make high current connections to the drain tab. Wiring losses have a profound effect on high-current circuits. tributing excess drop under load. ably by bootstrapping from the supply. source pin can be pulled 20V below ground with no effect. in which a transient may exceed the overvoltage trip point. voltages above 4V are required. MIC5015 is an inverting configuration of the MIC5014. 15µA typical, which is necessary to power an internal bandgap. turns on, allowing the gate of the power FET to be charged. enough. This is a feature not found on the MIC5011. rating of the power MOSFET at high supply voltages. turns off the device when the supply exceeds 35V.

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Figure 5. High Side Driver with Delayed Overcurrent Shutdown

“START” position is momentary and forces the driver ON. the tachometer’s output is used to hold the MIC5014 input ON. Figure 10. Motor Stall Shutdowm tion for the MIC5014 is as a basic one-chip DC-DC converter. output voltage shown will vary significantly with applied load. question prior to prototyping to prevent “explosive” results. Figure 8. Halogen Lamp Driver

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Figure 11. DC - DC Converter

High Side Driver With Load Protection (Figure 12) Al- though the MIC5014/15 devices are reverse battery pro- tected, the load and power FET are not, in a typical high side configuration. In the event of a reverse battery condition, the internal body diode of the power FET will be forward biased. This allows the reversed supply access to the load. Push-Pull Driver With No Cross-Conduction (Figure 13) As the turn-off time of the MIC5014/15 devices is much faster than the turn-on time, a simple push-pull driver with no cross conduction can be made using one MIC5014 and one MIC5015. The same control signal is applied to both inputs; the MIC5014 turns on with the positive signal, and the MIC5015 turns on when it swings low. This scheme works with no additional components as the relative time difference between the rise and fall times of the MIC5014 is large. However, this does mean that there is Figure 13: Push-Pull Driver The addition of a Schottky diode between the supply and the FET eliminates this problem. The MBR2035CT was chosen as it can withstand 20A continuous and 150A peak, and should survive the rigors of an automotive environment. The two diodes are paralleled to reduce switch loss (forward voltage drop). Figure 12: High Side Driver WIth Load Protection considerable deadtime (time when neither driver is turned on). If this circuit is used to drive an inductive load, catch diodes must be used on each half to provide an alternate path for the kickback current that will flow during this deadtime. This circuit is also a simple half H-bridge which can be driven with a PWM signal on the input for SMPS or motor drive applications in which high switching frequencies are not desired. Load MIC5014 Control Input OFF ON 10µF MBR2035CT MIC5014 Control Input 10µF MIC5015 NC GateGnd Source Input NC NC 12V IRFZ40 VOUT