MIC4421 MICREL | Alldatasheet

Document overview

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Technical content

Features

  • BiCMOS/DMOS Construction
  • Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up.
  • Input Will Withstand Negative Swing of Up to 5V
  • Logic High Input for Any Voltage from 2.4V to V S
  • Output Voltage Swing to Within 25mV of GND or V S

Applications

  • Switch Mode Power Supplies
  • Motor Controls
  • Pulse Transformer Driver
  • Class-D Switching Amplifiers
  • Line Drivers
  • Driving MOSFET or IGBT Parallel Chip Modules
  • Local Power ON/OFF Switch
  • Pulse Generators Functional Diagram IN OUT MIC4421 INVERTING MIC4422 NON-INVERTING 0.1mA 0.3mA 2kΩ VS GND

Ordering Information

Part No. Temperature Range Package Configuration MIC4421CN 0 °C to +70°C 8-Pin PDIP Inverting MIC4421BN –40 °C to +85°C 8-Pin PDIP Inverting MIC4421CM 0 °C to +70°C 8-Pin SOIC Inverting MIC4421BM –40 °C to +85°C 8-Pin SOIC Inverting MIC4421CT 0 °C to +70°C 5-Pin TO-220 Inverting MIC4422CN 0 °C to +70°C 8-Pin PDIP Non-Inverting MIC4422BN –40 °C to +85°C 8-Pin PDIP Non-Inverting MIC4422CM 0 °C to +70°C 8-Pin SOIC Non-Inverting MIC4422BM –40 °C to +85°C 8-Pin SOIC Non-Inverting MIC4422CT 0 °C to +70°C 5-Pin TO-220 Non-Inverting Pin Configurations VS OUT OUT GND VS IN NC GND Plastic DIP (N) SOIC (M) TAB

5 OUT

4 GND

2 GND

TO-220-5 (T) Pin Description Pin Number Pin Number Pin Name Pin Function TO-220-5 DIP, SOIC 1 2 IN Control Input 2, 4 4, 5 GND Ground: Duplicate pins must be externally connected together. 3, TAB 1, 8 V S Supply Input: Duplicate pins must be externally connected together. 5 6, 7 OUT Output: Duplicate pins must be externally connected together. 3 NC Not connected.

Electrical Characteristics: (TA = 25°C with 4.5 V ≤ VS ≤ 18 V unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Units INPUT VIH Logic 1 Input Voltage 2.4 1.3 V VIL Logic 0 Input Voltage 1.1 0.8 V VIN Input Voltage Range –5 V S+0.3 V IIN Input Current 0 V ≤ VIN ≤ VS –10 10 µA OUTPUT VOH High Output Voltage See Figure 1 V S–.025 V VOL Low Output Voltage See Figure 1 0.025 V R O Output Resistance, I OUT = 10 mA, VS = 18 V 0.6 Ω Output High R O Output Resistance, I OUT = 10 mA, VS = 18 V 0.8 1.7 Ω Output Low IPK Peak Output Current V S = 18 V (See Figure 5) 9 A IDC Continuous Output Current 2 A IR Latch-Up Protection Duty Cycle ≤ 2% >1500 mA Withstand Reverse Current t ≤ 300 µs SWITCHING TIME (Note 3) tR Rise Time Test Figure 1, C L = 10,000 pF 20 75 ns tF Fall Time Test Figure 1, C L = 10,000 pF 24 75 ns tD1 Delay Time Test Figure 1 15 60 ns tD2 Delay Time Test Figure 1 35 60 ns Power Supply IS Power Supply Current V IN = 3 V 0.4 1.5 mA VIN = 0 V 80 150 µA VS Operating Input Voltage 4.5 18 V Absolute Maximum Ratings (Notes 1, 2 and 3) Power Dissipation, TA ≤ 25°C Power Dissipation, T CASE ≤ 25°C Derating Factors (to Ambient) Operating Ratings Ambient Temperature Thermal Resistance

SUPPLY VOLTAGE (V) RISE TIME (ns) Rise Time vs. Supply Voltage 22,000pF 10,000pF 47,000pF 4 6 8 1 01 21 41 61 8 220 200 180 160 140 120 100 SUPPLY VOLTAGE (V) FALL TIME (ns) Fall Time vs. Supply Voltage 22,000pF 10,000pF 47,000pF TEMPERATURE ( °C) TIME (ns) Rise and Fall Times vs. Temperature -40 0 40 80 120 C L = 10,000pF VS = 18V tFALL tRISE 100 1000 10k 100k 300 250 200 150 100 CAPACITIVE LOAD (pF) RISE TIME (ns) Rise Time vs. Capacitive Load 18V 10V 100 1000 10k 100k 300 250 200 150 100 CAPACITIVE LOAD (pF) FALL TIME (ns) Fall Time vs. Capacitive Load 18V 10V 4 6 8 1 01 21 41 61 8 10-7 10-8 10-9 VOLTAGE (V) CROSSOVER ENERGY (A•s) Crossover Energy vs. Supply Voltage PER TRANSITION 100 1000 10k 100k CAPACITIVE LOAD (pF) SUPPLY CURRENT (mA) Supply Current vs. Capacitive Load VS = 5V 50kHz1 MHz 200kHz 100 1000 10k 100k 220 160 100 CAPACITIVE LOAD (pF) SUPPLY CURRENT (mA) Supply Current vs. Capacitive Load 120 140 180

200 VS = 18V

1 MHz

CAPACITIVE LOAD (pF) SUPPLY CURRENT (mA) Supply Current vs. Capacitive Load 120 VS = 12V 50kHz1 MHz 200kHz Typical Characteristic Curves

FREQUENCY (Hz) SUPPLY CURRENT (mA) Supply Current vs. Frequency VS = 12V 0.1µF 0.01µF 1000pF 10k 100k 1M 10M FREQUENCY (Hz) SUPPLY CURRENT (mA) Supply Current vs. Frequency VS = 5V 0.1µF 0.01µF 1000pF 4 6 8 1 01 21 41 61 8 SUPPLY VOLTAGE (V) TIME (ns) Propagation Delay vs. Supply Voltage tD2 tD1 0 2468 1 0 120 110 100 INPUT (V) TIME (ns) Propagation Delay vs. Input Amplitude tD2 tD1 VS = 10V -40 0 40 80 120 1000 100 TEMPERATURE ( °C) QUIESCENT SUPPLY CURRENT (µA) Quiescent Supply Current vs. Temperature INPUT = 0 INPUT = 1 VS = 18V 4 6 8 1 01 21 41 61 8 2.4 2.2 2.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 SUPPLY VOLTAGE (V) HIGH-STATE OUTPUT RESISTANCE ( Ω ) High-State Output Resist. vs. Supply Voltage 1.6 1.8 TJ = 25°C TJ = 150°C 4 6 8 1 01 21 41 61 8 2.4 2.2 2.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 SUPPLY VOLTAGE (V) LOW-STATE OUTPUT RESISTANCE ( Ω ) Low-State Output Resist. vs. Supply Voltage 1.6 1.8 TJ = 25°C TJ = 150°C -40 0 40 80 120 TEMPERATURE ( °C) TIME (ns) Propagation Delay vs. Temperature tD2 tD1 Typical Characteristic Curves (Cont.) 10k 100k 1M 10M 180 160 100 FREQUENCY (Hz) SUPPLY CURRENT (mA) Supply Current vs. Frequency 120 140 VS = 18V 0.1µF 0.01µF 1000pF

load to 18V in 50ns requires 3.6A. near the maximum rated voltage. it is referenced to the same ground. Figure 3. Direct Motor Drive Figure 4. Self Contained Voltage Doubler

12 W LINE

capacitor directly between pins 8 and 5. reduced and oscillation may result. should be provided for the logic and power connections. however, still be connected to power ground.

low impedance loads and/or operating at high frequency.

  • Load Power Dissipation (P
  • Quiescent power dissipation (PQ )
  • Transition power dissipation (PT) Calculation of load power dissipation differs depending on whether the load is capacitive, resistive or inductive. Resistive Load Power Dissipation Dissipation caused by a resistive load can be calculated as: P L = I2 RO D where: I = the current drawn by the load R O = the output resistance of the driver when the output is high, at the power supply voltage used. (See data sheet) D = fraction of time the load is conducting (duty cycle)

Figure 5. Switching Time Degradation Due to

6 AMPS

performance and reliability. occur to MIC4421/4422 however, and it will not latch. the clamping action of the input, ESD diode, and 1kΩ resistor.

Transition Power Dissipation Transition power is dissipated in the driver each time its output changes state, because during the transition, for a very brief interval, both the N- and P-channel MOSFETs in the output totem-pole are ON simultaneously, and a current is conducted through them from V S to ground. The transition power dissipation is approximately: PT = 2 f VS (A•s) where (A•s) is a time-current factor derived from the typical characteristic curve “Crossover Energy vs. Supply Voltage.” Total power (PD ) then, as previously described is just PD = PL + PQ + PT Definitions C L = Load Capacitance in Farads. D = Duty Cycle expressed as the fraction of time the input to the driver is high. f = Operating Frequency of the driver in Hertz IH = Power supply current drawn by a driver when both inputs are high and neither output is loaded. IL = Power supply current drawn by a driver when both inputs are low and neither output is loaded. ID = Output current from a driver in Amps. PD = Total power dissipated in a driver in Watts. PL = Power dissipated in the driver due to the driver’s load in Watts. PQ = Power dissipated in a quiescent driver in Watts. PT = Power dissipated in a driver when the output changes states (“shoot-through current”) in Watts. NOTE: The “shoot-through” current from a dual transition (once up, once down) for both drivers is stated in Figure 7 in ampere-nanoseconds. This figure must be multiplied by the number of repeti- tions per second (frequency) to find Watts. R O = Output resistance of a driver in Ohms. VS = Power supply voltage to the IC in Volts. Capacitive Load Power Dissipation Dissipation caused by a capacitive load is simply the energy placed in, or removed from, the load capacitance by the driver. The energy stored in a capacitor is described by the equation: E = 1/2 C V As this energy is lost in the driver each time the load is charged or discharged, for power dissipation calculations the 1/2 is removed. This equation also shows that it is good practice not to place more voltage in the capacitor than is necessary, as dissipation increases as the square of the voltage applied to the capacitor. For a driver with a capacitive load: P L = f C (VS)2 where: f = Operating Frequency C = Load Capacitance VS = Driver Supply Voltage Inductive Load Power Dissipation For inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case: P L1 = I2 RO D However, in this instance the RO required may be either the on resistance of the driver when its output is in the high state, or its on resistance when the driver is in the low state, depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the inductor is forcing current through the driver, dissipation is best described as P L2 = I VD (1 – D) where VD is the forward drop of the clamp diode in the driver (generally around 0.7V). The two parts of the load dissipation must be summed in to produce P L PL = PL1 + PL2 Quiescent Power Dissipation Quiescent power dissipation (PQ , as described in the input section) depends on whether the input is high or low. A low input will result in a maximum current drain (per driver) of ≤ 0.2mA; a logic high will result in a current drain of ≤ 3.0mA. Quiescent power can therefore be found from: P Q = VS [D IH + (1 – D) IL] where: IH = quiescent current with input high IL = quiescent current with input low D = fraction of time input is high (duty cycle) VS = power supply voltage

Figure 6. Peak Output Current Test Circuit