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Technical content

Features

  • CMOS Construction
  • Latch-Up Protected: Will Withstand >500 mA Reverse Output Current
  • Logic Input Withstands Negative Swing of Up to 5V
  • Matched Rise and Fall Times: 25 ns
  • High Peak Output Current: 6A Peak
  • Wide Operating Range: 4.5V to 18V
  • High Capacitive Load Drive: 10,000 pF
  • Low Delay Time: 55 ns (typ.)
  • Logic High Input for Any Voltage from 2.4V to VS
  • Low Equivalent Input Capacitance: 6 pF (typ.)
  • Low Supply Current: 450 μA with Logic 1 Input
  • Low Output Impedance: 2.5Ω
  • Output Voltage Swing within 25 mV of Ground or VS

Applications

  • Switch Mode Power Supplies
  • Motor Controls
  • Pulse Transformer Driver
  • Class-D Switching Amplifiers General Description MIC4420 and MIC4429 MOSFET drivers are tough, efficient, and easy to use. The MIC4429 is an inverting driver, while the MIC4420 is a non-inverting driver. They are capable of 6A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4420/4429 accepts any logic input from 2.4V to V S without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4420/4429 drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern BiCMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability insures adequate gate voltage to the MOSFET during power-up/down sequencing. Note: See MIC4120/4129 for high power and narrow pulse applications. Package Types MIC4420/9 8-Lead PDIP (N) 8-Lead SOIC (M) 8-Lead MSOP (MM) VS OUT OUT GND VS IN NC GND

5 OUT

4 GND

2 GND

5-Lead TO-220 (T) 6A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process

DS20006092B-page 2  2018 - 2022 Microchip Technology Inc. and its subsidiaries. Functional Block Diagram IN OUT MIC4429 INVERTING MIC4420 NONINVERTING 0.1mA 0.4mA 2kŸ VS GND

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 3 MIC4420/9

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings † Power Dissipation (TA ≤ 25°C) Power Dissipation (TC ≤ 25°C) Derating Factors (to Ambient) Operating Ratings ‡ † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ‡ Notice: The device is not guaranteed to function outside its operating ratings.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics: TA = +25°C with 4.5V ≤ VS ≤ 18V, unless otherwise specified. Note 1 Parameter Symbol Min. Typ. Max. Units Conditions INPUT Logic 1 Input Voltage VIH 2.4 1.4 — V — Logic 0 Input Voltage VIL — 1.1 0.8 V — Input Voltage Range VIN –5 — VS + 0.3 V — Input Current IIN –10 — 10 µA 0V ≤ V IN ≤ VS OUTPUT Output High Voltage VOH VS – 0.025 — — V See Figure 1-1 Output Low Voltage VOL — — 0.025 V See Figure 1-1 Output Resistance, Output Low ROL — 1.7 2.8 Ω I OUT = 10 mA, VS = 18V Output Resistance, Output High ROH — 1.5 2.5 Ω I OUT = 10 mA, VS = 18V Peak Output Current IPK — 6 — A V S = 18V (See Figure 4-3) Latch-Up Protection Withstand Reverse Current IR >500 — — mA — SWITCHING TIME (Note 2) Rise Time tR — 12 35 ns Figure 1-1, CL = 2500 pF Fall Time tF — 13 35 ns Figure 1-1, CL = 2500 pF Delay Time 1 tD1 — 18 75 ns Figure 1-1 Delay Time 2 tD2 — 48 75 ns Figure 1-1

DS20006092B-page 4  2018 - 2022 Microchip Technology Inc. and its subsidiaries. POWER SUPPLY Power Supply Current IS — 0.45 1.5 mA V IN = 3V — 90 150 µA V IN = 0V Operating Input Voltage V S 4.5 — 18 V — Note 1: Specification for packaged product only. 2: Switching times guaranteed by design. Electrical Characteristics: TA = –40°C to +85°C with 4.5V ≤ VS ≤ 18V, unless otherwise specified. Note 1 Parameter Symbol Min. Typ. Max. Units Conditions INPUT Logic 1 Input Voltage VIH 2.4 — — V — Logic 0 Input Voltage VIL — — 0.8 V — Input Voltage Range VIN –5 — VS + 0.3 V — Input Current IIN –10 — 10 µA 0V ≤ V IN ≤ VS OUTPUT Output High Voltage VOH VS – 0.025 — — V See Figure 1-1 Output Low Voltage VOL — — 0.025 V See Figure 1-1 Output Resistance, Output Low ROL — 3 5 Ω I OUT = 10 mA, VS = 18V Output Resistance, Output High ROH — 2.3 5 Ω I OUT = 10 mA, VS = 18V SWITCHING TIME (Note 2) Rise Time tR — 32 60 ns Figure 1-1, CL = 2500 pF Fall Time tF — 34 60 ns Figure 1-1, CL = 2500 pF Delay Time 1 tD1 — 50 100 ns Figure 1-1 Delay Time 2 tD2 — 65 100 ns Figure 1-1 POWER SUPPLY Power Supply Current IS — 0.45 3.0 mA V IN = 3V — 0.06 0.4 µA V IN = 0V Operating Input Voltage V S 4.5 — 18 V — Note 1: Specification for packaged product only. 2: Switching times guaranteed by design. ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: TA = +25°C with 4.5V ≤ VS ≤ 18V, unless otherwise specified. Note 1 Parameter Symbol Min. Typ. Max. Units Conditions

DS20006092B-page 6  2018 - 2022 Microchip Technology Inc. and its subsidiaries. TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Storage Temperature Range TS –65 — +150 °C — Junction Operating Temperature TJ — — +150 °C — Ambient Operating Temperature Range TA –40 — +85 °C B Version 0 — +70 C Version Lead Temperature — — — +300 °C Soldering, 10s Package Thermal Resistances Thermal Resistance, 8-Lead MSOP JA — 250 — °C/W — Thermal Resistance, 5-Lead TO-220 JC — 10 — °C/W — Thermal Resistance, 8-Lead PDIP JA — 125 — °C/W — Thermal Resistance, 8-Lead SOIC JA — 155 — °C/W — Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 7 MIC4420/9

2.0 TYPICAL PERFORMANCE CURVES

FIGURE 2-1: Rise Time vs. Supply Voltage. FIGURE 2-2: Fall Time vs. Supply Voltage. FIGURE 2-3: Rise and Fall Times vs. Temperature. FIGURE 2-4: Rise Time vs. Capacitive Load. FIGURE 2-5: Fall Time vs. Capacitive Load. FIGURE 2-6: Delay Time vs. Supply Voltage. Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 57 9 1 1 1 3 1 5 V (V)S C = 2200 pFL TIME (ns) C = 4700 pFL C = 10,000 pFL 57 9 1 1 1 3 1 5 C = 2200 pFL TIME (ns) C = 4700 pFL C = 10,000 pFL V (V)S –60 –20 20 60 100 140 TEMPERATURE (°C) t RISEt TIME (ns) C = 2200 pF V = 18VS FALL L V = 12VS V = 5VS 1000 10,000 CAPACITIVE LOAD (pF) V = 18VS TIME (ns) 3000 1000 10,000 CAPACITIVE LOAD (pF) TIME (ns) V = 18VS V = 12VS V = 5VS 3000 DELAY TIME (ns) 4 6 8 1 01 21 41 6 1 8 SUPPLY VOLTAGE (V) tD2 tD1

DS20006092B-page 10  2018 - 2022 Microchip Technology Inc. and its subsidiaries.

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin Number TO-220 Pin Number PDIP , SOIC, MSOP Pin Name Description 1 2 IN Control input. 2, 4 4, 5 GND Ground: Duplicate pins must be externally connected together. 3, TAB 1, 8 VS Supply input: Duplicate pins must be externally connected together. 5 6, 7 OUT Output: Duplicate pins must be externally connected together. — 3 NC Not connected.

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 11 MIC4420/9

4.0 APPLICATION INFORMATION

4.1 Supply Bypassing

Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 2500 pF load to 18V in 25 ns requires a 1.8A current from the device power supply. The MIC4420/4429 has double bonding on the supply pins, the ground pins and output pins This reduces parasitic lead inductance. Low inductance enables large currents to be switched rapidly. It also reduces internal ringing that can cause voltage breakdown when the driver is operated at or near the maximum rated voltage. Internal ringing can also cause output oscillation due to feedback. This feedback is added to the input signal because it is referenced to the same ground. To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low inductance ceramic disk capacitors with short lead lengths (less than 0.5 inch) should be used. A 1 μF low ESR film capacitor in parallel with two 0.1 μF low ESR ceramic capacitors, (such as AVX RAM GUARD ®), provides adequate bypassing. Connect one ceramic capacitor directly between pins 1 and 4. Connect the second ceramic capacitor directly between pins 8 and 5.

4.2 Grounding

The high current capability of the MIC4420/4429 demands careful PC board layout for best performance Because the MIC4429 is an inverting driver, any ground lead impedance will appear as negative feedback which can degrade switching speed. Feedback is especially noticeable with slow-rise time inputs. The MIC4429 input structure includes 300 mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended. Figure 4-1 shows the feedback effect in detail. As the MIC4429 input begins to go positive, the output goes negative and several amperes of current flow in the ground lead. As little as 0.05Ω of PC trace resistance can produce hundreds of millivolts at the MIC4429 ground pins. If the driving logic is referenced to power ground, the effective logic input level is reduced and oscillation may result. To ensure optimum performance, separate ground traces should be provided for the logic and power connections. Connecting the logic ground directly to the MIC4429 GND pins will ensure full logic drive to the input and ensure fast output switching. Both of the MIC4429 GND pins should, however, still be connected to power ground. FIGURE 4-1: Self-Contained Voltage Doubler.

4.3 Input Stage

The input voltage level of the 4429 changes the quiescent supply current. The N channel MOSFET input stage transistor drives a 450 μA current source load. With a logic “1” input, the maximum quiescent supply current is 450 μA. Logic “0” input level signals reduce quiescent current to 55 μA maximum. The MIC4420/4429 input is designed to provide 300 mV of hysteresis. This provides clean transitions, reduces noise sensitivity, and minimizes output stage current spiking when changing states. Input voltage threshold level is approximately 1.5V, making the device TTL compatible over the 4.5V to 18V operating supply voltage range. Input current is less than 10 μA over this range. The MIC4429 can be directly driven by the TL494, SG1526/1527, SG1524, TSC170, MIC38HC42, and similar switch mode power supply integrated circuits. By offloading the power-driving duties to the MIC4429 1μF 50V MKS2 UNITED CHEMCON SXE 0.1μF WIMA MKS2 8 6, 7 0.1μF 50V 5.6k Ÿ 560 Ÿ +15 220 μF 50V BYV 10 (x 2) 35 μF 50V (x2) 1N4448 0 20 40 60 80 100 120 140 mA VOLTS 30 Ÿ LINE Output Voltage vs. Load Current

DS20006092B-page 12  2018 - 2022 Microchip Technology Inc. and its subsidiaries. MIC4420/4429, the power supply controller can operate at lower dissipation. This can improve performance and reliability. The input can be greater than the +VS supply, however, current will flow into the input lead. The propagation delay for tD2 will increase to as much as 400 ns at room temperature. The input currents can be as high as 30 mA peak-to-peak (6.4 mARMS) with the input, 6 V greater than the supply voltage. No damage will occur to MIC4420/4429 however, and it will not latch. The input appears as a 7 pF capacitance, and does not change even if the input is driven from an AC source. Care should be taken so that the input does not go more than 5 volts below the negative rail. FIGURE 4-2: Switching Time Degradation Due to Negative Feedback.

4.4 Power Dissipation

CMOS circuits usually permit the user to ignore power dissipation. Logic families such as 4000 and 74C have outputs which can only supply a few milliamperes of current, and even shorting outputs to ground will not force enough current to destroy the device. The MIC4420/4429 on the other hand, can source or sink several amperes and drive large capacitive loads at high frequency. The package power dissipation limit can easily be exceeded. Therefore, some attention should be given to power dissipation when driving low impedance loads and/or operating at high frequency. The supply current vs. frequency and supply current vs. capacitive load characteristic curves aid in determining power dissipation calculations. Table 4-1 lists the maximum safe operating frequency for several power supply voltages when driving a 2500 pF load. More accurate power dissipation figures can be obtained by summing the three dissipation sources. Given the power dissipation in the device, and the thermal resistance of the package, junction operating temperature for any ambient is easy to calculate. For example, the thermal resistance of the 8-pin MSOP package, from the data sheet, is 250°C/W. In a 25°C ambient, then, using a maximum junction temperature of 150°C, this package will dissipate 500 mW. Accurate power dissipation numbers can be obtained by summing the three sources of power dissipation in the device:

  • Load power dissipation (PL)
  • Quiescent power dissipation (PQ)
  • Transition power dissipation (PT) Calculation of load power dissipation differs depending on whether the load is capacitive, resistive or inductive.

4.4.1 RESISTIVE LOAD POWER

Dissipation caused by a resistive load can be calculated as: EQUATION 4-1:

4.4.2 CAPACITIVE LOAD DISSIPATION

Dissipation caused by a capacitive load is simply the energy placed in, or removed from, the load capacitance by the driver. The energy stored in a capacitor is described by Equation 4-2: EQUATION 4-2: MIC4429 8 6, 7 +18 V 0.1μF 0.1μF TEK CURRENT PROBE 6302 2,500 pF POLYCARBONATE 5.0V 0 V 18 V 0 V WIMA MKS-2 1 μF LOGIC GROUND POWER GROUND

6 AMPS

TABLE 4-1: MIC4429 MAX. OPERATING FREQUENCY VS Maximum Frequency 18V 500 kHz 15V 700 kHz 10V 1.6 MHz Note 1: Conditions: DIP package (θJA = 130°C/W), TA = 25°C, CL = 2500 pF. PL I2 RO D= Where: I = The current drawn by the load. RO = The output resistance of the driver when the output is high, at the power supply voltage used. D = Fraction of the time the load is conducting (duty cycle). E 1/2C V 2=

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 13 MIC4420/9 As this energy is lost in the driver each time the load is charged or discharged, for power dissipation calculations the 1/2 is removed. This equation also shows that it is good practice not to place more voltage on the capacitor than is necessary, as dissipation increases as the square of the voltage applied to the capacitor. For a driver with a capacitive load: EQUATION 4-3:

4.4.3 INDUCTIVE LOAD POWER

For inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case: EQUATION 4-4: However, in this instance the RO required may be either the on resistance of the driver when its output is in the high state, or its on resistance when the driver is in the low state, depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the inductor is forcing current through the driver, dissipation is best described in Equation 4-5 in which VD is the forward drop of the clamp diode in the driver (generally around 0.7V). EQUATION 4-5: The two parts of the load dissipation must be summed in to produce PL. EQUATION 4-6:

4.4.4 QUIESCENT POWER DISSIPATION

Quiescent power dissipation (P Q, as described in the Input Stage section) depends on whether the input is high or low. A low input will result in a maximum current drain (per driver) of ≤0.2 mA; a logic high will result in a current drain of ≤2.0 mA. Quiescent power can therefore be found from: EQUATION 4-7:

4.4.5 TRANSITION POWER DISSIPATION

Transition power is dissipated in the driver each time its output changes state, because during the transition, for a very brief interval, both the N- and P-channel MOSFETs in the output totem-pole are ON simultaneously, and a current is conducted through them from +V S to ground. The transition power dissipation is approximately: EQUATION 4-8: Total power dissipation (PD), then, as previously described, is: EQUATION 4-9: PL f C VS 2= Where: f = Operating frequency. C = Load capacitance. VS = Driver supply voltage. PL1 I2 RO D= PL PL1 PL2+ = Where: IH = Quiescent current with input high. IL = Quiescent current with input low. D = Duty cycle. VS = Power supply voltage. Where: A•s = A time-current factor derived from the typical characteristic curves. PD PL PQ PT+ +=

DS20006092B-page 14  2018 - 2022 Microchip Technology Inc. and its subsidiaries.

4.4.6 DEFINITIONS

  • CL = Load Capacitance in Farads.
  • D = Duty Cycle expressed as the fraction of time the input to the driver is high.
  • f = Operating Frequency of the driver in Hertz.
  • IH = Power supply current drawn by a driver when both inputs are high and neither output is loaded.
  • IL = Power supply current drawn by a driver when both inputs are low and neither output is loaded.
  • ID = Output current from a driver in Amps.
  • PD = Total power dissipated in a driver in Watts.
  • PL = Power dissipated in the driver due to the driver’s load in Watts.
  • PQ = Power dissipated in a quiescent driver in Watts.
  • PT = Power dissipated in a driver when the output changes states (“shoot-through current”) in Watts. Please note that the “shoot-through” current from a dual transition (once up, once down) for both drivers is shown by Figure 2-15 and is in ampere-seconds. This figure must be multiplied by the number of repetitions per second (frequency) to find Watts.
  • RO = Output resistance of a driver in Ohms.
  • VS = Power supply voltage to the IC in Volts. FIGURE 4-3: Peak Output Current Test Circuit. MIC4429 8 6, 7 +18 V 0.1μF 0.1μF TEK CURRENT PROBE 6302 10,000 pF POLYCARBONATE 5.0V 0 V 18 V 0 V WIMA MK22 1 μF

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 15 MIC4420/9

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

Note: If the full seven-character YYWWNNN code cannot fit on the package, the following truncated codes are used based on the available marking space:

6 Characters = YWWNNN; 5 Characters = WWNNN; 4 Characters = WNNN; 3 Characters = NNN; 2 Char-

acters = NN; 1 Character = N Example Example8-Lead SOIC* 8-Lead PDIP* Example8-Lead MSOP* (front) XXXX XXX 4429 YMM Example8-Lead MSOP* (back) WNNN 9722 MIC XXXXXX WNNN MIC 4420YN 9223 MIC XXXXXX WNNN MIC 4420YM 9223 Example5-Lead TO-220* MIC XXXXXX WNNN MIC 4429ZT 9223 Legend: XX...X Product code or customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC ® designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package.

  • , ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar (‾) symbol may not be to scale.

DS20006092B-page 16  2018 - 2022 Microchip Technology Inc. and its subsidiaries. 5-Lead TO-220 Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 17 MIC4420/9 8-Lead SOIC Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.

DS20006092B-page 18  2018 - 2022 Microchip Technology Inc. and its subsidiaries. 8-Lead MSOP Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 19 MIC4420/9 8-Lead PDIP Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.

DS20006092B-page 20  2018 - 2022 Microchip Technology Inc. and its subsidiaries. NOTES:

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 21 MIC4420/9 APPENDIX A: REVISION HISTORY Revision A (October 2018)

  • Converted Micrel document MIC4420/9 to Micro- chip data sheet DS20006092B.
  • Minor text changes throughout. Revision B (January 2022)
  • Corrected Section 5.1 “Package Marking Infor- mation” device marking specification.

DS20006092B-page 22  2018 - 2022 Microchip Technology Inc. and its subsidiaries. NOTES:

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 23 MIC4420/9 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. Examples: a) MIC4420: 6A Peak Low-Side Non-Inverting MOSFET Driver, Industrial Grade –40°C to +85°C Junction Tempera- ture Range, RoHS-Compliant.

  • MIC4420YM: 8-Lead SOIC, 95/Tube
  • MIC4420YM-TR: 8-Lead SOIC, 2,500/Reel
  • MIC4420YMM: 8-Lead MSOP , 100/Tube
  • MIC4420YMM-TR: 8-Lead MSOP , 2,500/Reel
  • MIC4420YN: 8-Lead PDIP, 50/Tube b) MIC4420: 6A Peak Low-Side Non-Inverting MOSFET Driver, Commercial Grade 0°C to +70°C Junction Tempera- ture Range, RoHS-Compliant.
  • MIC4420ZM: 8-Lead SOIC, 95/Tube
  • MIC4420ZM-TR: 8-Lead SOIC, 2,500/Reel
  • MIC4420ZN: 8-Lead PDIP, 50/Tube
  • MIC4420ZT: 5-Lead TO-220, 50/Tube c) MIC4429: 6A Peak Low-Side Inverting MOSFET Driver, Industrial Grade –40°C to +85°C Junction Temperature Range, RoHS-Compliant.
  • MIC4429YM: 8-Lead SOIC, 95/Tube
  • MIC4429YM-TR: 8-Lead SOIC, 2,500/Reel
  • MIC4429YMM: 8-Lead MSOP , 100/Tube
  • MIC4429YMM-TR: 8-Lead MSOP , 2,500/Reel
  • MIC4429YN: 8-Lead PDIP, 50/Tube d) MIC4429: 6A Peak Low-Side Inverting MOSFET Driver, Commercial Grade 0°C to +70°C Junction Temperature Range, RoHS-Compliant.
  • MIC4429ZM: 8-Lead SOIC, 95/Tube
  • MIC4429ZM-TR: 8-Lead SOIC, 2,500/Reel
  • MIC4429ZN: 8-Lead PDIP, 50/Tube
  • MIC4429ZT: 5-Lead TO-220, 50/Tube Device: MIC4420: 6A Peak Low-Side Non-Inverting MOSFET Driver, Bipolar/CMOS/DMOS Process MIC4429: 6A Peak Low-Side Inverting MOSFET Driver, Bipolar/CMOS/DMOS Process Junction Temperature Range: Y = –40°C to +85°C, RoHS-Compliant Z = 0°C to +70°C, RoHS-Compliant Package: N = 8-Lead PDIP M = 8-Lead SOIC MM = 8-Lead MSOP T = 5-Lead TO-220 Media Type: <blank>= 95/Tube (M, SOIC) <blank>= 100/Tube (MM, MSOP) <blank>= 50/Tube (N, PDIP & T, TO-220) TR = 2,500/Reel (SOIC, MSOP) Note 1: Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. Device X XX -XX Part No. Junction Temp. Range Package Media Type

DS20006092B-page 24  2018 - 2022 Microchip Technology Inc. and its subsidiaries. NOTES:

 2018 - 2022 Microchip Technology Inc. and its subsidiaries. DS20006092B-page 25 This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this informa- tion in any other manner violates these terms. Information regarding device applications is provided only for your conve- nience and may be superseded by updates. It is your responsi- bility to ensure that your application meets with your specifications. Contact your local Microchip sales office for additional support or, obtain additional support at https:// www.microchip.com/en-us/support/design-help/client-support- services. THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS". MICROCHIP MAKES NO REPRESENTATIONS OR WAR- RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF NON- INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A PARTICULAR PURPOSE, OR WARRANTIES RELATED TO ITS CONDITION, QUALITY, OR PERFORMANCE. IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDI- RECT, SPECIAL, PUNITIVE, INCIDENTAL, OR CONSE - QUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY KIND WHATSOEVER RELATED TO THE INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY , THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THE INFORMATION. Use of Microchip devices in life support and/or safety applica- tions is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AgileSwitch, APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet- Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, TrueTime, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP , INICnet, Intelligent Paralleling, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP , SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY , Total Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY , ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, Symmcom, and Trusted Time are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2018 - 2022, Microchip Technology Incorporated and its subsidiar- ies. All Rights Reserved. ISBN: 978-1-5224-9377-8 Note the following details of the code protection feature on Microchip products:

  • Microchip products meet the specifications contained in their particular Microchip Data Sheet.
  • Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and under normal conditions.
  • Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act.
  • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to continuously improving the code protection features of our products. For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality.

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