MIC4420 MICREL | Alldatasheet

Document overview

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Technical content

Features

  • CMOS Construction
  • Latch-Up Protected: Will Withstand >500mA Reverse Output Current
  • Logic Input Withstands Negative Swing of Up to 5V
  • Logic High Input for Any Voltage From 2.4V to V S
  • Output Voltage Swing Within 25mV of Ground or V S

Applications

  • Switch Mode Power Supplies
  • Motor Controls
  • Pulse Transformer Driver
  • Class-D Switching Amplifiers Functional Diagram IN OUT MIC4429 INVERTING MIC4420 NON-INVERTING 0.1mA 0.4mA 2kΩ VS GND

Ordering Information

Part No. Temperature Range Package Configuration MIC4420CN 0 °C to +70°C 8-Pin PDIP Non-Inverting MIC4420BN –40 °C to +85°C 8-Pin PDIP Non-Inverting MIC4420CM 0 °C to +70°C 8-Pin SOIC Non-Inverting MIC4420BM –40 °C to +85°C 8-Pin SOIC Non-Inverting MIC4420BMM –40 °C to +85°C 8-Pin MSOP Non-Inverting MIC4420CT 0 °C to +70°C 5-Pin TO-220 Non-Inverting MIC4429CN 0 °C to +70°C 8-Pin PDIP Inverting MIC4429BN –40 °C to +85°C 8-Pin PDIP Inverting MIC4429CM 0 °C to +70°C 8-Pin SOIC Inverting MIC4429BM –40 °C to +85°C 8-Pin SOIC Inverting MIC4429BMM –40 °C to +85°C 8-Pin MSOP Inverting MIC4429CT 0 °C to +70°C 5-Pin TO-220 Inverting Pin Configurations VS OUT OUT GND VS IN NC GND Plastic DIP (N) SOIC (M) MSOP (MM) TAB

5 OUT

4 GND

2 GND

TO-220-5 (T) Pin Description Pin Number Pin Number Pin Name Pin Function TO-220-5 DIP, SOIC, MSOP 1 2 IN Control Input 2, 4 4, 5 GND Ground: Duplicate pins must be externally connected together. 3, TAB 1, 8 V S Supply Input: Duplicate pins must be externally connected together. 5 6, 7 OUT Output: Duplicate pins must be externally connected together. 3 NC Not connected.

Electrical Characteristics: (TA = 25°C with 4.5V ≤ VS ≤ 18V unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Units INPUT VIH Logic 1 Input Voltage 2.4 1.4 V VIL Logic 0 Input Voltage 1.1 0.8 V VIN Input Voltage Range –5 V S + 0.3 V IIN Input Current 0 V ≤ VIN ≤ VS –10 10 µA OUTPUT VOH High Output Voltage See Figure 1 V S–0.025 V VOL Low Output Voltage See Figure 1 0.025 V R O Output Resistance, I OUT = 10 mA, VS = 18 V 1.7 2.8 Ω Output Low R O Output Resistance, I OUT = 10 mA, VS = 18 V 1.5 2.5 Ω Output High IPK Peak Output Current V S = 18 V (See Figure 5) 6 A IR Latch-Up Protection >500 mA Withstand Reverse Current SWITCHING TIME (Note 3) tR Rise Time Test Figure 1, C L = 2500 pF 12 35 ns tF Fall Time Test Figure 1, C L = 2500 pF 13 35 ns tD1 Delay Time Test Figure 1 18 75 ns tD2 Delay Time Test Figure 1 48 75 ns POWER SUPPLY IS Power Supply Current V IN = 3 V 0.45 1.5 mA VIN = 0 V 90 150 µA VS Operating Input Voltage 4.5 18 V Absolute Maximum Ratings (Notes 1, 2 and 3) Power Dissipation, TA ≤ 25°C Power Dissipation, T C ≤ 25°C Derating Factors (to Ambient) Operating Ratings Ambient Temperature Package Thermal Resistance

Typical Characteristic Curves 1000 10,000 CAPACITIVE LOAD (pF) TIME (ns) V = 18VS Fall Time vs. Capacitive Load V = 12VS V = 5VS –60 –20 20 60 100 140 TEMPERATURE (°C) TIME (ns) D1t D2t Propagation Delay Time vs. Temperature 0 100 1000 10,000 CAPACITIVE LOAD (pF) I – SUPPLY CURRENT (mA)S Supply Current vs. Capacitive Load C = 2200 pFL V = 18VS 500 kHz 200 kHz 20 kHz V = 15VS DELAY TIME (ns) 4 6 8 1 01 21 41 6 1 8 SUPPLY VOLTAGE (V) Delay Time vs. Supply Voltage tD2 tD1 V = 12VS V = 5VS 1000 10,000 CAPACITIVE LOAD (pF) V = 18VS Rise Time vs. Capacitive Load TIME (ns) 100 0 100 1000 10,000 FREQUENCY (kHz) SUPPLY CURRENT (mA) Supply Current vs. Frequency 1000 18V 10V C = 2200 pFL –60 –20 20 60 100 140 TEMPERATURE (°C) 57 9 1 1 1 3 1 5 V (V)S 57 9 1 1 1 3 1 5 t RISEt TIME (ns) Rise and Fall Times vs. Temperature C = 2200 pF V = 18VS FALL C = 2200 pFL TIME (ns) Rise Time vs. Supply Voltage C = 4700 pFL C = 10,000 pFL C = 2200 pFL TIME (ns) Fall Time vs. Supply Voltage C = 4700 pFL C = 10,000 pFL L V (V)S 3000 3000

Typical Characteristic Curves (Cont.) 2.5 1.5 59 1 3 V (V)S Low-State Output Resistance R ( )ΩOUT 100 mA 50 mA 10 mA 71 1 1 5 1000 800 600 400 200 SUPPLY VOLTAGE (V) 900 800 700 600 500 400–60 –20 20 60 100 140 TEMPERATURE (°C) Quiescent Power Supply Current vs. Temperature LOGIC “1” INPUT V = 18VS SUPPLY CURRENT (µA) 04 81 2 1 6 20 SUPPLY CURRENT (µA) Quiescent Power Supply Voltage vs. Supply Current LOGIC “1” INPUT 59 1 3 V (V)S High-State Output Resistance R ( )ΩOUT 100 mA 50 mA10 mA 71 1 1 5 200 160 120 DELAY (ns) 567 1 1 1 3 15 Effect of Input Amplitude on Propagation Delay LOAD = 2200 pF INPUT 2.4V INPUT 3.0V INPUT 5.0V INPUT 8V AND 10V 8 9 10 12 14 V (V)S 2.0 1.5 1.0 0.5 CROSSOVER AREA (A•s) x 10 -8 567 1 1 1 3 15 Crossover Area vs. Supply Voltage 8 9 10 12 14 SUPPLY VOLTAGE V (V) LOGIC “0” INPUT s PER TRANSITION

near the maximum rated voltage. it is referenced to the same ground. capacitor directly between pins 8 and 5. oscillation, but attention to layout is still recommended. reduced and oscillation may result. should be provided for the logic and power connections. however, still be connected to power ground. Figure 3. Self-Contained Voltage Doubler

30 W LINE

input, the maximum quiescent supply current is 450µA. current is less than 10µA over this range. improve performance and reliability. volts below the negative rail.

  • Load Power Dissipation (PL)
  • Quiescent power dissipation (PQ )
  • Transition power dissipation (PT) Calculation of load power dissipation differs depending on whether the load is capacitive, resistive or inductive. Resistive Load Power Dissipation Dissipation caused by a resistive load can be calculated as: P L = I2 RO D where: I = the current drawn by the load R O = the output resistance of the driver when the output is high, at the power supply voltage used. (See data sheet) D = fraction of time the load is conducting (duty cycle)

Figure 3. Switching Time Degradation Due to

where: IH = quiescent current with input high IL = quiescent current with input low D = fraction of time input is high (duty cycle) VS = power supply voltage Transition Power Dissipation Transition power is dissipated in the driver each time its output changes state, because during the transition, for a very brief interval, both the N- and P-channel MOSFETs in the output totem-pole are ON simultaneously, and a current is conducted through them from V +S to ground. The transi- tion power dissipation is approximately: PT = 2 f VS (A•s) where (A•s) is a time-current factor derived from the typical characteristic curves. Total power (PD ) then, as previously described is: PD = PL + PQ +PT Definitions C L = Load Capacitance in Farads. D = Duty Cycle expressed as the fraction of time the input to the driver is high. f = Operating Frequency of the driver in Hertz IH = Power supply current drawn by a driver when both inputs are high and neither output is loaded. IL = Power supply current drawn by a driver when both inputs are low and neither output is loaded. ID = Output current from a driver in Amps. PD = Total power dissipated in a driver in Watts. PL = Power dissipated in the driver due to the driver’s load in Watts. PQ = Power dissipated in a quiescent driver in Watts. PT = Power dissipated in a driver when the output changes states (“shoot-through current”) in Watts. NOTE: The “shoot-through” current from a dual transition (once up, once down) for both drivers is shown by the "Typical Characteristic Curve : Crossover Area vs. Supply Voltage and is in ampere-seconds. This figure must be multiplied by the number of repetitions per second (fre- quency) to find Watts. R O = Output resistance of a driver in Ohms. VS = Power supply voltage to the IC in Volts. Capacitive Load Power Dissipation Dissipation caused by a capacitive load is simply the energy placed in, or removed from, the load capacitance by the driver. The energy stored in a capacitor is described by the equation: E = 1/2 C V As this energy is lost in the driver each time the load is charged or discharged, for power dissipation calculations the 1/2 is removed. This equation also shows that it is good practice not to place more voltage on the capacitor than is necessary, as dissipation increases as the square of the voltage applied to the capacitor. For a driver with a capaci- tive load: P L = f C (VS)2 where: f = Operating Frequency C = Load Capacitance VS = Driver Supply Voltage Inductive Load Power Dissipation For inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case: P L1 = I2 RO D However, in this instance the RO required may be either the on resistance of the driver when its output is in the high state, or its on resistance when the driver is in the low state, depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the inductor is forcing current through the driver, dissipation is best described as P L2 = I VD (1-D) where VD is the forward drop of the clamp diode in the driver (generally around 0.7V). The two parts of the load dissipa- tion must be summed in to produce P L PL = PL1 + PL2 Quiescent Power Dissipation Quiescent power dissipation (PQ , as described in the input section) depends on whether the input is high or low. A low input will result in a maximum current drain (per driver) of ≤0.2mA; a logic high will result in a current drain of ≤2.0mA. Quiescent power can therefore be found from: P Q = VS [D IH + (1-D) IL]

Figure 6. Peak Output Current Test Circuit