MIC4416 MICREL | Alldatasheet

Document overview

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Technical content

Features

  • +4.5V to +18V operation
  • Low steady-state supply current 50µA typical, control input low 370µA typical, control input high
  • 1.2A nominal peak output 3.5Ω typical output resistance at 18V supply 7.8Ω typical output resistance at 5V supply
  • 25mV maximum output offset from supply or ground
  • Operates in low-side switch circuits
  • TTL-compatible input withstands –20V
  • ESD protection
  • Inverting and noninverting versions

Applications

  • Battery conservation
  • Solenoid and motion control
  • Lamp control
  • Switch-mode power supplies

Ordering Information

Part Number Temp. Range Package Marking Noninverting MIC4416BM4 –40 °C to +85°C SOT-143 D10 Inverting MIC4417BM4 –40 °C to +85°C SOT-143 D11 MIC4416/4417 IttyBitty™ Low-Side MOSFET Driver General Description The MIC4416 and MIC4417 IttyBitty™ low-side MOSFET drivers are designed to switch an N-channel enhancement- type MOSFET from a TTL-compatible control signal in low- side switch applications. The MIC4416 is noninverting and the MIC4417 is inverting. These drivers feature short delays and high peak current to produce precise edges and rapid rise and fall times. Their tiny 4-lead SOT-143 package uses minimum space. The MIC4416/7 is powered from a +4.5V to +18V supply voltage. The on-state gate drive output voltage is approxi- mately equal to the supply voltage (no internal regulators or clamps). High supply voltages, such as 10V, are appropriate for use with standard N-channel MOSFETs. Low supply voltages, such as 5V, are appropriate for use with logic-level N-channel MOSFETs. In a low-side configuration, the driver can control a MOSFET that switches any voltage up to the rating of the MOSFET. The MIC4416 is available in the SOT-143 package and is rated for –40°C to +85°C ambient temperature range. Typical Application On Off VS CTL G GND MIC4416 4.7µF Si9410DY* N-channel MOSFET Load Voltage† Load +12V † Load voltage limited only by MOSFET drain-to-source rating * Siliconix 30m Ω , 7A max. 0.1µF Low-Side Power Switch

G Dxx Part Identification SOT-143 (M4) Pin Description Pin Number Pin Name Pin Function 1 GND Ground: Power return. 2 G Gate (Output) : Gate connection to external MOSFET. 3 VS Supply (Input): +4.5V to +18V supply. 4 CTL Control (Input): TTL-compatible on/off control input. MIC4416 only: Logic high forces the gate output to the supply voltage. Logic low forces the gate output to ground. MIC4417 only: Logic high forces the gate output to ground. Logic low forces the gate output to the supply voltage. Part Number Identification MIC4416BM4 D10 MIC4417BM4 D11 Early production identification: ML10

Electrical Characteristics

Parameter Condition (Note 1) Min Typ Max Units Supply Current 4.5V ≤ VS ≤ 18V V CTL = 0V 50 200 µA VCTL = 5V 370 1500 µA Control Input Voltage 4.5V ≤ VS ≤ 18V V CTL for logic 0 input 0.8 V VCTL for logic 1 input 2.4 V Control Input Current 0V ≤ VCTL ≤ VS –10 10 µA Delay Time, VCTL Rising V S = 5V C L = 1000pF, Note 2 42 ns VS = 18V C L = 1000pF, Note 2 33 60 ns Delay Time, VCTL Falling V S = 5V C L = 1000pF, Note 2 42 ns VS = 18V C L = 1000pF, Note 2 23 40 ns Output Rise Time V S = 5V C L = 1000pF, Note 2 24 ns VS = 18V C L = 1000pF, Note 2 14 40 ns Output Fall Time V S = 5V C L = 1000pF, Note 2 28 ns VS = 18V C L = 1000pF, Note 2 16 40 ns Gate Output Offset Voltage 4.5V ≤ VS ≤ 18V V G = high –25 mV VG = low 25 mV Output Resistance V S = 5V, IOUT = 10mA P-channel (source) MOSFET 7.6 Ω N-channel (sink) MOSFET 7.8 Ω VS = 18V, IOUT = 10mA P-channel (source) MOSFET 3.5 10 Ω N-channel (sink) MOSFET 3.5 10 Ω Gate Output Reverse Current No latch up 250 mA General Note: Devices are ESD protected, however handling precautions are recommended. Note 1: Typical values at TA = 25°C. Minimum and maximum values indicate performance at –40°C ≥ TA ≥ +85°C. Parts production tested at 25°C. Note 2: Refer to “MIC4416 Timing Definitions” and “MIC4417 Timing Definitions” diagrams (see next page). Absolute Maximum Ratings Operating Ratings (soldered to 0.25in2 copper ground plane)

G GND MIC4416/7 VSUPPLY VOUT ≈ VSUPPLY Source State (P-channel on, N-channel off) IOUTISUPPLY VS CTL G GND MIC4416/7 VSUPPLY VOUT ≈ GND Sink State (P-channel off, N-channel on) IOUTISUPPLY MIC4416 = high MIC4417 = low MIC4416 = low MIC4417 = high MIC4416/MIC4417 Operating States 90% 10% rise time 10% fall time VS OUTPUT INPUT 90% delay time delay time pulse width 2.5V MIC4416 (Noninverting) Timing Definitions delay time 90% 10% rise time 10% delay time fall time VS OUTPUT INPUT 90% 2.5V pulse width MIC4417 (Inverting) Timing Definitions Test Circuit VS CTL G GND MIC4416/7 VSUPPLY

4 C L

TIME (ns) SUPPLY VOLTAGE (V) Rise and Fall Time vs. Supply Voltage FALL RISE fCTL = 1MHz -60 -30 0 30 60 90 120 150 TIME (ns) TEMPERATURE ( °C) Rise and Fall Time vs. Temperature RISE VSUPPLY = 5V fCTL = 1MHz FALL -60 -30 0 30 60 90 120 150 TIME (ns) TEMPERATURE ( °C) Rise and Fall Time vs. Temperature RISE VSUPPLY = 18V fCTL = 1MHz FALL Typical Characteristics Note 3 100 200 300 400 500 0 3 6 9 12 15 18 SUPPLY CURRENT ( µA) SUPPLY VOLTAGE (V) Quiescent Supply Current vs. Supply Voltage VCTL = 5V VCTL = 0V 0.1 100 1 10 100 SUPPLY CURRENT (mA) CAPACITANCE (nF) Supply Current vs. Load Capacitance VSUPPLY = 5V 100kHz 10kHz 1MHz 0.1 100 100 1000 2000 SUPPLY CURRENT (mA) FREQUENCY (kHz) Supply Current vs. Frequency VSUPPLY = 18V 0.01 0.1 100 1 10 100 TIME (µs) CAPACITANCE (nF) Output Rise and Fall Time vs. Load Capacitance FALL RISE VSUPPLY = 5V fCTL = 50kHz 0 3 6 9 12 15 18 TIME (ns) SUPPLY VOLTAGE (V) Delay Time vs. Supply Voltage VCTL RISE VCTL FALL -60 -30 0 30 60 90 120 150 TIME (ns) TEMPERATURE ( °C) Delay Time vs. Temperature VSUPPLY = 5V VCTL RISE VCTL FALL -60 -30 0 30 60 90 120 150 TIME (ns) TEMPERATURE ( °C) Delay Time vs. Temperature VSUPPLY = 18V VCTL RISE VCTL FALL 0.1 100 1 10 100 SUPPLY CURRENT (mA) CAPACITANCE (nF) Supply Current vs. Load Capacitance VSUPPLY = 18V 100kHz 10kHz 1MHz 0.01 0.1 1 10 100 TIME (µs) CAPACITANCE (nF) Output Rise and Fall Time vs. Load Capacitance FALL RISE VSUPPLY = 18V fCTL = 50kHz

VOLTAGE DROP (mV) OUTPUT CURRENT (mA) Output Voltage Drop vs. Output Source Current VSUPPLY = 5V 18V NOTE 4 200 400 600 800 1000 1200 0 2 04 06 08 0 1 0 0 VOLTAGE DROP (mV) OUTPUT CURRENT (mA) Output Voltage Drop vs. Output Sink Current VSUPPLY = 5V 18V NOTE 5 100 200 300 400 500 600 0369 1 2 1 5 1 8 HYSTERESIS (mV) SUPPLY VOLTAGE (V) Control Input Hysteresis vs. Supply Voltage 0 3 6 9 12 15 18 ON RESISTANCE ( Ω ) SUPPLY VOLTAGE (V) Output Source Resistance IOUT = 10mA 200 400 600 800 -60 -30 0 30 60 90 120 150 HYSTERESIS (mV) TEMPERATURE ( °C) Control Input Hysteresis vs. Temperature VSUPPLY = 18V -60 -30 0 30 60 90 120 150 ON-RESISTANCE ( Ω ) TEMPERATURE ( °C) Output Source Resistance vs. Temperature VSUPPLY = 5V IOUT ≈ 3mA VSUPPLY = 18V IOUT ≈ 3mA 0 3 6 9 12 15 18 ON RESISTANCE ( Ω ) SUPPLY VOLTAGE (V) Output Sink Resistance IOUT = 10mA -60 -30 0 30 60 90 120 150 ON-RESISTANCE ( Ω ) TEMPERATURE ( °C) Output Sink Resistance vs. Temperature VSUPPLY = 5V IOUT ≈ 3mA VSUPPLY = 18V IOUT ≈ 3mA 0.5 1.0 1.5 2.0 2.5 0 3 6 9 12 15 18 CURRENT (A) SUPPLY VOLTAGE (V) Peak Output Current vs. Supply Voltage Sink NOTE 7 Source NOTE 6 0.1 100 1x102 1x103 1x104 1x105 1x106 1x107 SUPPLY CURRENT (mA) FREQUENCY (Hz) Supply Current vs. Frequency 0pF 1,000pF 2,000pF 5,000pF C L = 10,000pF VSUPPLY = 5V 0.1 100 1x102 1x103 1x104 1x105 1x106 1x107 SUPPLY CURRENT (mA) FREQUENCY (Hz) Supply Current vs. Frequency 0pF 1,000pF 2,000pF 5,000pF C L = 10,000pF VSUPPLY = 18V Note 3: Typical Characteristics at TA = 25°C, VS = 5V, C L = 1000pF unless noted. Note 4: Source-to-drain voltage drop across the internal P-channel MOSFET = V S – VG . Note 5: Drain-to-source voltage drop across the internal N-channel MOSFET = VG – VGND . (Voltage applied to G.) Note 6: 1µs pulse test, 50% duty cycle. OUT connected to GND. OUT sources current. (MIC4416, V CTL = 5V; MIC4417, VCTL = 0V) Note 7: 1µs pulse test, 50% duty cycle. VS connected to OUT. OUT sinks current. (MIC4416, V CTL = 0V; MIC4417, VCTL = 5V)

Refer to the functional diagram. The MIC4416 is a noninverting driver. A logic high on the CTL (control) input produces gate drive output. The MIC4417 is an inverting driver. A logic low on the CTL (control) input produces gate drive output. The G (gate) output is used to turn on an external N-channel MOSFET. Supply VS (supply) is rated for +4.5V to +18V. External capacitors are recommended to decouple noise. Control CTL (control) is a TTL-compatible input. CTL must be forced high or low by an external signal. A floating input will cause unpredictable operation. A high input turns on Q1, which sinks the output of the 0.3mA and the 0.6mA current source, forcing the input of the first inverter low. Hysteresis The control threshold voltage, when CTL is rising, is slightly higher than the control threshold voltage when CTL is falling. When CTL is low, Q2 is on, which applies the additional 0.6mA current source to Q1. Forcing CTL high turns on Q1 which must sink 0.9mA from the two current sources. The higher current through Q1 causes a larger drain-to-source voltage drop across Q1. A slightly higher control voltage is required to pull the input of the first inverter down to its threshold. Functional Diagram Logic-Level Input VS CTL G MIC4417 INVERTING MIC4416 NONINVERTING 0.3mA 0.6mA GND Load VSWITCHED VSUPPLY D1 D4 D5D3 35V Functional Diagram with External Components Q2 turns off after the first inverter output goes high. This reduces the current through Q1 to 0.3mA. The lower current reduces the drain-to-source voltage drop across Q1. A slightly lower control voltage will pull the input of the first inverter up to its threshold. Drivers The second (optional) inverter permits the driver to be manu- factured in inverting and noninverting versions. The last inverter functions as a driver for the output MOSFETs Q3 and Q4. Gate Output G (gate) is designed to drive a capacitive load. V G (gate output voltage) is either approximately the supply voltage or approximately ground, depending on the logic state applied to CTL. If CTL is high, and VS (supply) drops to zero, the gate output will be floating (unpredictable). ESD Protection D1 protects VS from negative ESD voltages. D2 and D3 clamp positive and negative ESD voltages applied to CTL. R1 isolates the gate of Q1 from sudden changes on the CTL input. D4 and D5 prevent Q1’s gate voltage from exceeding the supply voltage or going below ground.