MI3130-VB VBSEMI | Alldatasheet
Document overview
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Technical content
-V (D-S) MOSFET
FEATURES
- Halogen-free TrenchFET® Power MOSFET
APPLICATIONS
Load Switches for Portable Devices Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 °C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a sol dering iron is not recommended for leadless components. PRODUCT SUMMARY RDS(on) (ΩVDS (V) ) ID (A)a Qg (Typ.) 0.022 at VGS = 4.5 V 6.8 10 nC 0.030 at VGS = 2.5 V 6.0 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit VDrain-Source Voltage DS 30 VGate-Source Voltage VGS ± 20 TC = 25 Continuous Drain Current (TJ = 150 °C) °C 6.8 ID a 6TC A = 70 °C a 6.8a, b,TA = 25 °C c 6TA = 70 °C a, b, c Pulsed Drain Current IDM 30 TCContinuous Source-Drain Diode Current = 25 °C IS 5.2 2.1TA = 25 °C b, c TC Maximum Power Dissipation = 25 °C PD 6.3 TC W = 70 °C 4 2.5TA = 25 °C b, c 1.6TA = 70 °C b, c TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C Soldering Recommendations (Peak Temperature)e, f 260 THERMAL RESISTANCE RATINGS Parameter Typical Maximum UnitSymbol t ≤ 5 s R thJ Maximum Junction-to-Ambienta, c, d A 40 50 °C/W Maximum Junction-to-Foot (Drain) RSteady State thJF 15 20 RoHS COMPLIANT D G SD MI3130-VB www.VBsemi.com g
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS = 0 V, IDVDrain-Source Breakdown Voltage DS = 250 µA 30 V ΔVDS /TVDS Temperature Coefficient J ID = 250 µA 25 mV/°CΔVGS(th)/TVGS(th) Temperature Coefficient J - 4.0 VDS = VGS , ID VGS(tGate-Source Threshold Voltage h) = 250 µA 0.6 1.5 V IGate-Source Leakage GSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS IZero Gate Voltage Drain Current DSS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta VDS ≥ 5 V, VGS ID(on) = 4.5 V 30 A Drain-Source On-State Resistancea VGS = 4.5 V, ID RDS(on) = 6.3 A 0.022 ΩVGS = 2.5 V, ID = 4.5 A 0.030 Forward Transconductancea gfs VDS = 10 V, ID = 6.3 A 45 S Dynamicb CInput Capacitance iss VDS = 10 V, VGS = 0 V, f = 1 MHz 1200 C pFOutput Capacitance oss 220 CReverse Transfer Capacitance rss 100 VDS = 10 V, VGS = 10 V, ID QTotal Gate Charge g = 6.3 A 22 33 nCVDS = 10 V, VGS = 4.5 V, ID = 6.3 A 10 15 QGate-Source Charge gs 2.5 QGate-Drain Charge gd 1.7 RGate Resistance g f = 1 MHz 2.4 Ω td(oTurn-on Delay Time n) VDD = 10 V, RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 15 25 t ns Rise Time r 10 15 tTurn-Off Delay Time d(off) 35 55 tFall Time f 12 20 td(oTurn-on Delay Time n) VDD = 10 V, RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 10 15 tRise Time r 12 20 tTurn-Off Delay Time d(off) 25 40 tFall Time f 10 15 Drain-Source Body Diode Characteristics IContinuous Source-Drain Diode Current S TC = 25 °C 5.2 AIPulse Diode Forward Current SM 30 VBody Diode Voltage SD IS = 6.7 A, VGS = 0 V 0.8 1.2 V tBody Diode Reverse Recovery Time rr IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C 20 40 ns QBody Diode Reverse Recovery Charge rr 10 20 nC tReverse Recovery Fall Time a 10 nstReverse Recovery Rise Time b 10 MI3130-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge I D- Drain Cu VDS - Drain-to-Source Voltage (V) rrent (A) VGS = 5 thru 3 V VGS = 1.5 V VGS = 2.5V VGS = 1 V 0.030 0.028 0.026 0.024 0.022 0.020 0.018 0.016 6 12 10 8 24 30 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS =4 . 5V VGS =2 . 5V 0.032 0 5 10 15 20 25 6ID = 6.3 A VGS - Gate-to-Source Voltage (V Qg - Total Gate Charge (nC) VDS = 16 V Tr VDS = 10 V ansfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) I D- Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 300 600 900 1200 1500 0 5 10 15 20 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF)Coss 0.6 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 RDS(on) TJ - Junction Temperature (°C) ormalized) - On-Resistance VGS = 4.5 V, 2.5 V6ID = 6.3 A MI3130-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C IS - Source Cu VSD - Source-to-Drain Voltage (V) rrent (A) 100 TJ = 25 °C 0.4 0.6 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V ID = 250 µA On-Resistance vs. Gate-to-Source Volt TJ - Temperature (°C) age Single Pulse Power 0.000 0.010 0.020 0.030 0.040 0.050 012345 VGS - Gate-to-Source Voltage (V RDS(on) - On-Resistance (Ω) TJ = 25 °C TJ = 125 °C ID = 6.3 A P o we r ( W) Time (s) 1 600 0.1 0.01 0.001 10 100 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA = 25 °C Single Pulse BVDSS Limited Limited byR DS(on)* 10 s DC 1m s 100 µs 10 ms 100 ms MI3130-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on TJ(max) = 150 ° C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ID - Drain Cu TC - Case Temperature (°C) rrent (A) Package Limited Power Derating 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) MI3130-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 1010 10 600 -1-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 ffe c Square Wave Pulse Duration (s) i t 1. Duty Cycle, D = t 1 t 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -210 10 10 -1-4 0.1 0.01 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 f c e f t Square Wave Pulse Duration (s) i N d e z i l a m r o E t v n e i s n a r T e e c n a d e p m I l a m r e h T Single Pulse MI3130-VB www.VBsemi.com g
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max D A C L EH E1 B e MI3130-VB www.VBsemi.com g
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