MH07N65CT CITC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Dimensions in inches and (millimeters) ■ Features ■ Mechanical data O ■ Absolute(T = 25 C unless otherwise specified)C ■ Outline Fast switching.• ESD improved capability.• Low gate charge.• Low reverse transfer capacitances.• 100% single pulse avalanche energy test.• TO-220AB MH07N65CT 650V Silicon N-Channel Power MOSFET PARAMETER Continuous Drain Current Pulsed Drain Current(1) Repetitive Avalanche Energy(1) Single Pulse Avalanche Energy(2) Power Dissipation Maximum temperature for soldering Drain-Source Voltage Avalanche Current(1) Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1 Gate-Source Voltage CONDITIONS Symbol VDSS TL IAR MH07N65CT ±30 450 UNIT V mJ ID 300 100 A O C IDM EAS 650 3.3 A VGS EAR W mJ PD V O Derating factor above 25 C

  • Epoxy : UL94-V0 rated flame retardant. .• Case : JEDEC TO-220F molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. ed.• Polarity: As mark .• Mounting Position : Any .• Weight : Approximated 2.25 gram Continuous Drain Current O T = 100 CC 4.5 0.8 O W/ C Operating and Storage Temperature Range T , TJ STG -55 ~ +150 O C Gate source ESD VESD(G-S) 3000 VHBM-C = 100pf, R = 1.5kΩ Peak Diode Recovery dv/dt(3) dV/dt 5.0 V/ns NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.O 2.L=10.0mH, I = 10.5A, Start T = 25 C.D J O 3.I =7A,di/dt ≤100A/us, V ≤BV , Start T = 25 C.SD DD DS J Drain Source Gate Marking code N N H G L E A Q F C D symbol Dimensions in inches(millimeters) A B C D E F G H L N Q ØP Min Max 10.10 10.50 15.0 16.0 8.90 9.50 4.30 4.80 2.30 3.00 1.20 1.40 0.70 0.90 0.35 0.55 1.17 1.37 3.30 3.80 12.70 14.70 2.34 2.74 2.40 3.00 3.70 3.90 B

O ■ Electrical characteristics(T = 25 C unless otherwise specified)C PARAMETER Gate-Source Leakage Current, Forward Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current, Reverse Static Drain-Source On-Resistance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Continuous Source-Drain Diode Current Body Diode Voltage Reverse recovery time Reverse recovery charge Turn-off Delay Time Pulse Diode Forward Current Bvdss Temperature Coefficient ■ ON Characteristics PARAMETER PARAMETER PARAMETER ■ Dynamic Characteristics ■ Resistive Switching Characteristics V = 0V, I = 250µAGS D CONDITIONS Symbol VDSS IGSS(R) IDSS MIN. 650 TYP. MAX. UNIT V uA uA IGSS(F) -10 100 BV / TDSS J 0.61 O V/ CO I = 250uA, Reference 25 CD V = 600V, V = 0V, T = 25°CDS GS a V = 480V, V = 0V, T = 125°CDS GS a V = 20VGS V = -20VGS VGS(th) V2.0 RDS(on) Ω0.98 1.4 4.0V = V , I = 250µADS GS D V = 10V, I = 3.5AGS D CONDITIONS Symbol MIN. TYP. MAX. UNIT gfs Coss Crss S pF Ciss 100 1072 6.0V = 15V, I = 3.5ADS D V = 25V, V = 0V, f = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT Total Gate Charge Gate-Source Charge Gate-Drain Charge Fail Time ns tr td(OFF) td(ON) I = 7A, V = 300V, V = 10V, R = 4.7ΩD DD GS G CONDITIONS Symbol MIN. TYP. MAX. UNIT nCQgs Qgd Qg I = 7A, V = 300V, V = 10VD DD GS tf 13 ■ Source-Drain Diode Characteristics PARAMETER IS ns Qrr ISM VSD trr 1.5 uC1562 267 V A I = 7.0A, V = 0VS GS O I = 7A, T = 25 C, dI /dt = 100A/μs,S J F V = 0VGS CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Thermal characteristics PARAMETER Thermal Resistance Junction to Ambient CONDITIONS Symbol RθJC MIN. TYP. MAX. UNIT O C/W RθJA 1.25 Junction to Case ■ Gate-source Zener Diode PARAMETER Gate-Source Breakdown Voltage CONDITIONS Symbol VGSO MIN. TYP. MAX. UNIT VI = ±1mA(open Drain)GS 30 Boby Diode Boby Diode MH07N65CT 650V Silicon N-Channel Power MOSFET Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1

■ Rating and characteristic curves MH07N65CT 650V Silicon N-Channel Power MOSFET Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1

■ Rating and characteristic curves MH07N65CT 650V Silicon N-Channel Power MOSFET Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1

■ Rating and characteristic curves MH07N65CT 650V Silicon N-Channel Power MOSFET Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1

■ Test circuit and waveform MH07N65CT 650V Silicon N-Channel Power MOSFET Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1

■ Test circuit and waveform MH07N65CT 650V Silicon N-Channel Power MOSFET Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1

http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 ■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. MH07N65CT 650V Silicon N-Channel Power MOSFET Document ID : DS-21M66 Revised Date : 2015/09/16 Revision : C1