MGY25N120 ONSEMI | Alldatasheet

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1Motorola IGBT Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0073/C0110/C0115/C0117/C0108/C0097/C0116/C0101/C0100 /C0071/C0097/C0116/C0101 /C0066/C0105/C0112/C0111/C0108/C0097/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifical- ly suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.

  • Industry Standard High Power TO–264 Package (TO–3PBL)
  • High Speed Eoff: 216 /C0109J/A typical at 125°C
  • High Short Circuit Capability – 10 /C0109s minimum
  • Robust High Voltage Termination MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 1200 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ ) VCGR 1200 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C PD 212 1.69 Watts W/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω ) tsc 10 /C0109s Thermal Resistance — Junction to Case – IGBT — Junction to Ambient R θJC R θJA 0.6 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Mounting Torque, 6–32 or M3 screw 10 lbf/C0083in (1.13 N/C0083m) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Order this document by MGY25N120/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0071/C0089/C0050/C0053/C0078/C0049/C0050/C0048 IGBT IN TO–264

25 A @ 90°C

38 A @ 25°C

1200 VOLTS

CASE 340G–02 STYLE 5 TO–264 Motorola Preferred Device C E G G C E  Motorola, Inc. 1997

/C0077/C0071/C0089/C0050/C0053/C0078/C0049/C0050/C0048

2 Motorola IGBT Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES 1200 960 Vdc mV/°C Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS 25 — — Vdc Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES 100 2500 µAdc Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 12.5 Adc) (VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 25 Adc) VCE(on) 2.37 2.15 2.98 3.24 4.19 Vdc Gate Threshold Voltage (VCE = VGE , IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) 4.0 6.0 8.0 Vdc mV/°C Forward Transconductance (VCE = 10 Vdc, IC = 25 Adc) gfe — 12 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C ies — 2795 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C oes — 181 — Transfer Capacitance f = 1.0 MHz) C res — 45 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time (V 720 Vd I 25 Ad td(on) — 91 — ns Rise Time (VCC = 720 Vdc, IC = 25 Adc, V 15 Vd L 300 H tr — 124 — Turn–Off Delay Time VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω ) td(off) — 196 — Fall Time R G = 20 Ω ) Energy losses include “tail” tf — 310 — Turn–Off Switching Loss Eoff — 2.44 4.69 mJ Turn–On Delay Time (V 720 Vd I 25 Ad td(on) — 88 — ns Rise Time (VCC = 720 Vdc, IC = 25 Adc, V 15 Vd L 300 H tr — 126 — Turn–Off Delay Time VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω , TJ = 125°C ) td(off) — 236 — Fall Time R G = 20 Ω , TJ = 125 C) Energy losses include “tail” tf — 640 — Turn–Off Switching Loss Eoff — 5.40 — mJ Gate Charge (V 720 Vdc I 25 Adc Q T — 97 — nC (VCC = 720 Vdc, IC = 25 Adc, VGE = 15 Vdc) Q 1 — 31 —VGE = 15 Vdc) Q 2 — 40 — INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE — 13 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

4 Motorola IGBT Device Data

Figure 7. Turn–Off Losses versus Figure 8. Turn–Off Losses versus Figure 9. Reverse Biased Figure 10. Thermal Response

/C0077/C0071/C0089/C0050/C0053/C0078/C0049/C0050/C0048 5Motorola IGBT Device Data PACKAGE DIMENSIONS CASE 340G–02 TO–264 ISSUE F DIM A MIN MAX MIN MAX INCHES 2.8 2.9 1.102 1.142 MILLIMETERS B 19.3 20.3 0.760 0.800 C 4.7 5.3 0.185 0.209 D 0.93 1.48 0.037 0.058 E 1.9 2.1 0.075 0.083 F 2.2 2.4 0.087 0.102 G 5.45 BSC 0.215 BSC H 2.6 3.0 0.102 0.118 J 0.43 0.78 0.017 0.031 K 17.6 18.8 0.693 0.740 L 11.0 11.4 0.433 0.449 N 3.95 4.75 0.156 0.187 P 2.2 2.6 0.087 0.102 Q 3.1 3.5 0.122 0.137 R 2.15 2.35 0.085 0.093 U 6.1 6.5 0.240 0.256 W 2.8 3.2 0.110 0.125 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 0.25 (0.010) M TB M J R H N U L P A K C E F D G W2 PL 3 PL 0.25 (0.010) M YQ S 123 –B– –Q– –Y– –T– STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MGY25N120/D◊