MGW30N60 MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0073/C0110/C0115/C0117/C0108/C0097/C0116/C0101/C0100 /C0071/C0097/C0116/C0101 /C0066/C0105/C0112/C0111/C0108/C0097/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies.

  • Industry Standard High Power TO–247 Package with Isolated Mounting Hole
  • High Speed Eoff: 60 /C0109J per Amp typical at 125°C
  • High Short Circuit Capability – 10 /C0109s minimum
  • Robust High Voltage Termination
  • Robust RBSOA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 100 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C PD 202 1.61 Watts W/°C Operating and Storage Junction T emperature Range TJ, Tstg –55 to 150 °C Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω ) tsc 10 /C0109s Thermal Resistance — Junction to Case – IGBT — Junction to Ambient R θJC R θJA 0.62 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Mounting T orque, 6–32 or M3 screw 10 lbf/C0083in (1.13 N/C0083m) (1)Pulse width is limited by maximum junction temperature. Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics— are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MGW30N60/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0071/C0087/C0051/C0048/C0078/C0054/C0048 IGBT IN TO–247

30 A @ 90°C

50 A @ 25°C

600 VOLTS

CASE 340F–03, Style 4 TO–247AE Motorola Preferred Device G C E C E G  Motorola, Inc. 1995

/C0077/C0071/C0087/C0051/C0048/C0078/C0054/C0048

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BV CES 600 870 Vdc mV/°C Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) BV ECS 25 — — Vdc Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES 100 2500 µAdc Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 15 Adc) (VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 30 Adc) VCE(on) 2.20 2.10 2.60 2.90 3.45 Vdc Gate Threshold Voltage (VCE = VGE , IC = 1 mAdc) Threshold T emperature Coefficient (Negative) VGE(th) 4.0 6.0 8.0 Vdc mV/°C Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc) gfe — 15 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C ies — 4280 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C oes — 275 — Transfer Capacitance f = 1.0 MHz) C res — 19 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω, TJ = 25°C) Energy losses include “tail” td(on) — 76 — ns Rise Time (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω, TJ = 25°C) Energy losses include “tail” tr — 80 — Turn–Off Delay Time CC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω, TJ = 25°C) Energy losses include “tail” td(off) — 348 — Fall Time /C0109H R G = 20 Ω, TJ = 25°C) Energy losses include “tail” tf — 188 — Turn–Off Switching Loss /C0109H R G = 20 Ω, TJ = 25°C) Energy losses include “tail” Eoff — 0.98 1.28 mJ Turn–On Delay Time (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω, TJ = 125°C) Energy losses include “tail” td(on) — 73 — ns Rise Time (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω, TJ = 125°C) Energy losses include “tail” tr — 95 — Turn–Off Delay Time CC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 /C0109H R G = 20 Ω, TJ = 125°C) Energy losses include “tail” td(off) — 394 — Fall Time /C0109H R G = 20 Ω, TJ = 125°C) Energy losses include “tail” tf — 418 — Turn–Off Switching Loss /C0109H R G = 20 Ω, TJ = 125°C) Energy losses include “tail” Eoff — 1.90 — mJ Gate Charge (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc) Q T — 150 — nC (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc) Q 1 — 30 —VGE = 15 Vdc) Q 2 — 45 — INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE — 13 — nH (1) Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤ 2%.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 7. Turn–Off Losses versus Figure 8. Turn–Off Losses versus Figure 9. Turn–Off Losses versus Figure 10. Reverse Biased Safe

/C0077/C0071/C0087/C0051/C0048/C0078/C0054/C0048 5Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 340F–03 TO–247AE ISSUE E R P A K VF D G U L E 0.25 (0.010)M T B M 0.25 (0.010)M Y Q S J H C 1 2 3 –T– –B– –Y– –Q– STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A MIN MAX MIN MAX INCHES 20.40 20.90 0.803 0.823 MILLIMETERS B 15.44 15.95 0.608 0.628 C 4.70 5.21 0.185 0.205 D 1.09 1.30 0.043 0.051 E 1.50 1.63 0.059 0.064 F 1.80 2.18 0.071 0.086 G 5.45 BSC 0.215 BSC H 2.56 2.87 0.101 0.113 J 0.48 0.68 0.019 0.027 K 15.57 16.08 0.613 0.633 L 7.26 7.50 0.286 0.295 P 3.10 3.38 0.122 0.133 Q 3.50 3.70 0.138 0.145 R 3.30 3.80 0.130 0.150 U 5.30 BSC 0.209 BSC V 3.05 3.40 0.120 0.134 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.

/C0077/C0071/C0087/C0051/C0048/C0078/C0054/C0048

6 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 T atsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MGW30N60/D /C0042/C0077/C0071/C0087/C0051/C0048/C0078/C0054/C0048/C0047/C0068/C0042