MGW21N60ED MOTOROLA | Alldatasheet

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1Motorola IGBT Device Data /C0080/C0114/C0101/C0108/C0105/C0109/C0105/C0110/C0097/C0114/C0121 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0073/C0110/C0115/C0117/C0108/C0097/C0116/C0101/C0100 /C0071/C0097/C0116/C0101 /C0066/C0105/C0112/C0111/C0108/C0097/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high tempera- ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device.

  • Industry Standard TO–247 Package
  • High Speed: Eoff = 65 /C0109J/A typical at 125°C
  • High Voltage Short Circuit Capability – 10 /C0109s minimum at 125°C, 400 V
  • Low On–Voltage — 2.1 V typical at 20 A, 125°C
  • Soft Recovery Free Wheeling Diode is included in the Package
  • Robust High Voltage Termination
  • ESD Protection Gate–Emitter Zener Diodes MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) IC25 IC90 ICM Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C PD 142 1.14 Watts W/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω ) tsc 10 /C0109s Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Diode Thermal Resistance — Junction to Ambient R θJC R θJC R θJA 0.88 1.4 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Mounting Torque, 6–32 or M3 screw 10 lbf/C0083in (1.13 N/C0083m) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. This document contains information on a new product. Specifications and information herein are subject to change without notice. Order this document by MGW21N60ED/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0071/C0087/C0050/C0049/C0078/C0054/C0048/C0069/C0068 IGBT IN TO–247

21 A @ 90°C

31 A @ 25°C

600 VOLTS

ON–VOLTAGE CASE 340K–01, TO–247 AE C E G G C E  Motorola, Inc. 1997

/C0077/C0071/C0087/C0050/C0049/C0078/C0054/C0048/C0069/C0068

2 Motorola IGBT Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES 600 870 Vdc mV/°C Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) BV ECS 15 — — Vdc Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES 200 µAdc Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 50 µAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 10 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 20 Adc) VCE(on) 1.7 1.5 2.2 2.1 2.5 Vdc Gate Threshold Voltage (VCE = VGE , IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) 4.0 6.0 8.0 Vdc mV/°C Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) gfe — 8.6 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C ies — 1605 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C oes — 146 — Transfer Capacitance f = 1.0 MHz) C res — 23 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time (V 360 Vd I 20 Ad td(on) — 29 — ns Rise Time (V 360 Vd I 20 Ad tr — 60 — Turn–Off Delay Time (VCC = 360 Vdc, IC = 20 Adc, V 15 Vd L 300 H td(off) — 238 — Fall Time VGE = 15 Vdc, L = 300 /C0109H, R G = 20 Ω , TJ = 25°C ) tf — 140 — Turn–Off Switching Loss R G = 20 Ω , TJ = 25 C) Energy losses include “tail” Eoff — 0.8 1.15 mJ Turn–On Switching Loss Eon — 0.6 — Total Switching Loss Ets — 1.4 — Turn–On Delay Time (V 360 Vd I 20 Ad td(on) — 28 — ns Rise Time (V 360 Vd I 20 Ad tr — 62 — Turn–Off Delay Time (VCC = 360 Vdc, IC = 20 Adc, V 15 Vd L 300 H td(off) — 338 — Fall Time VGE = 15 Vdc, L = 300 /C0109H, R G = 20 Ω , TJ = 125°C ) tf — 220 — Turn–Off Switching Loss R G = 20 Ω , TJ = 125 C) Energy losses include “tail” Eoff — 1.3 — mJ Turn–On Switching Loss Eon — 0.8 — Total Switching Loss Ets — 2.1 — Gate Charge (V 360 Vdc I 20 Adc Q T — 86 — nC (VCC = 360 Vdc, IC = 20 Adc, VGE = 15 Vdc) Q 1 — 18 —VGE = 15 Vdc) Q 2 — 39 — DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 10 Adc) (IEC = 10 Adc, TJ = 125°C) (IEC = 17 Adc) VFEC 1.7 1.6 1.3 2.0 1.9 2.3 Vdc (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)

Figure 1. Output Characteristics Figure 2. Output Characteristics Figure 3. Transfer Characteristics Figure 4. Collector–To–Emitter Saturation

17.5 V TJ = 125°C

4 Motorola IGBT Device Data

Figure 5. Capacitance Variation Figure 6. Gate–To–Emitter Voltage versus Figure 7. Total Energy Losses versus Figure 8. Total Energy Losses versus Figure 9. Total Energy Losses versus Figure 10. Turn–Off Losses versus

/C0077/C0071/C0087/C0050/C0049/C0078/C0054/C0048/C0069/C0068

6 Motorola IGBT Device Data

CASE 340K–01 ISSUE A NOTES: DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. R P A K V F D G U L E0.25 (0.010)M TB M 0.25 (0.010)M YQ S J H C 123 –T– –B– –Y– –Q– DIM MIN MAX MIN MAX INCHESMILLIMETERS A 19.7 20.3 0.776 0.799 B 15.3 15.9 0.602 0.626 C 4.7 5.3 0.185 0.209 D 1.0 1.4 0.039 0.055 E 1.27 REF 0.050 REF F 2.0 2.4 0.079 0.094 G 5.5 BSC 0.216 BSC H 2.2 2.6 0.087 0.102 J 0.4 0.8 0.016 0.031 K 14.2 14.8 0.559 0.583 L 5.5 NOM 0.217 NOM P 3.7 4.3 0.146 0.169 Q 3.55 3.65 0.140 0.144 R 5.0 NOM 0.197 NOM U 5.5 BSC 0.217 BSC V 3.0 3.4 0.118 0.134 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MGW21N60ED/D◊